Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM

doi:10.1088/1674-1056/26/1/018501

中国物理B ›› 2017, Vol. 26 ›› Issue (1): 18501-018501.doi: 10.1088/1674-1056/26/1/018501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM

Xiao-Yu Pan(潘霄宇), Hong-Xia Guo(郭红霞), Yin-Hong Luo(罗尹虹), Feng-Qi Zhang(张凤祁), Li-Li Ding(丁李利), Jia-Nan Wei(魏佳男), Wen Zhao(赵雯)

Northwest Institute of Nuclear Technology, Xi'an 710024, China

收稿日期:2016-08-03 修回日期:2016-09-26 出版日期:2017-01-05 发布日期:2017-01-05
通讯作者: Hong-Xia Guo E-mail:guohxnint@126.com

Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM

Xiao-Yu Pan(潘霄宇), Hong-Xia Guo(郭红霞), Yin-Hong Luo(罗尹虹), Feng-Qi Zhang(张凤祁), Li-Li Ding(丁李利), Jia-Nan Wei(魏佳男), Wen Zhao(赵雯)

Northwest Institute of Nuclear Technology, Xi'an 710024, China

Received:2016-08-03 Revised:2016-09-26 Online:2017-01-05 Published:2017-01-05
Contact: Hong-Xia Guo E-mail:guohxnint@126.com

摘要/Abstract

摘要：

Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation.

关键词: displacement damage, neutron irradiation, single event latchup, TCAD simulation

Abstract:

Key words: displacement damage, neutron irradiation, single event latchup, TCAD simulation

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

61.80.-x (Physical radiation effects, radiation damage) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

潘霄宇, 郭红霞, 罗尹虹, 张凤祁, 丁李利, 魏佳男, 赵雯. Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM[J]. 中国物理B, 2017, 26(1): 18501-018501.

Xiao-Yu Pan(潘霄宇), Hong-Xia Guo(郭红霞), Yin-Hong Luo(罗尹虹), Feng-Qi Zhang(张凤祁), Li-Li Ding(丁李利), Jia-Nan Wei(魏佳男), Wen Zhao(赵雯). Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM[J]. Chin. Phys. B, 2017, 26(1): 18501-018501.

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Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM

Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM

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