Improved thermoelectric performance in p-type Bi0.48Sb1.52Te3 bulk material by adding MnSb2Se4

doi:10.1088/1674-1056/26/1/017202

中国物理B ›› 2017, Vol. 26 ›› Issue (1): 17202-017202.doi: 10.1088/1674-1056/26/1/017202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Improved thermoelectric performance in p-type Bi_0.48Sb_1.52Te₃ bulk material by adding MnSb₂Se₄

Binglei Cao(曹丙垒), Jikang Jian(简基康), Binghui Ge(葛炳辉), Shanming Li(李善明), Hao Wang(王浩), Jiao Liu(刘骄), Huaizhou Zhao(赵怀周)

1. Physics and Optoelectronics Engineering College, Guangdong University of Technology, Guangzhou 510006, China;
2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2016-09-13 修回日期:2016-10-26 出版日期:2017-01-05 发布日期:2017-01-05
通讯作者: Jikang Jian, Huaizhou Zhao E-mail:jianjikang@126.com;hzhao@iphy.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51472052 and Y6J1421A41).

Improved thermoelectric performance in p-type Bi_0.48Sb_1.52Te₃ bulk material by adding MnSb₂Se₄

Binglei Cao(曹丙垒)^1,2, Jikang Jian(简基康)¹, Binghui Ge(葛炳辉)², Shanming Li(李善明)², Hao Wang(王浩)², Jiao Liu(刘骄)¹, Huaizhou Zhao(赵怀周)²

1. Physics and Optoelectronics Engineering College, Guangdong University of Technology, Guangzhou 510006, China;
2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2016-09-13 Revised:2016-10-26 Online:2017-01-05 Published:2017-01-05
Contact: Jikang Jian, Huaizhou Zhao E-mail:jianjikang@126.com;hzhao@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51472052 and Y6J1421A41).

摘要/Abstract

摘要： Bismuth telluride (Bi₂Te₃) based alloys, such as p-type Bi_0.5Sb_1.5Te₃, have been leading candidates for near room temperature thermoelectric applications. In this study, Bi_0.48Sb_1.52Te₃ bulk materials with MnSb₂Se₄ were prepared using high-energy ball milling and spark plasma sintering (SPS) process. The addition of MnSb₂Se₄ to Bi_0.48Sb_1.52Te₃ increased the hole concentration while slightly decreasing the Seebeck coefficient, thus optimising the electrical transport properties of the bulk material. In addition, the second phases of MnSb₂Se₄ and Bi_0.48Sb_1.52Te₃ were observed in the Bi_0.48Sb_1.52Te₃ matrix. The nanoparticles in the semi-coherent second phase of MnSb₂Se₄ behaved as scattering centres for phonons, yielding a reduction in the lattice thermal conductivity. Substantial enhancement of the figure of merit, ZT, has been achieved for Bi_0.48Sb_1.52Te₃ by adding an Mn_0.8Cu_0.2Sb₂Se₄ (2 mol%) sample, for a wide range of temperatures, with a peak value of 1.43 at 375 K, corresponding to ~40% improvement over its Bi_0.48Sb_1.52Te₃ counterpart. Such enhancement of the thermoelectric (TE) performance of p-type Bi₂Te₃ based materials is believed to be advantageous for practical applications.

关键词: Bi_0.48Sb_1.52Te₃, thermoelectric materials, semi-coherent second phase, ZT enhancement

Abstract: Bismuth telluride (Bi₂Te₃) based alloys, such as p-type Bi_0.5Sb_1.5Te₃, have been leading candidates for near room temperature thermoelectric applications. In this study, Bi_0.48Sb_1.52Te₃ bulk materials with MnSb₂Se₄ were prepared using high-energy ball milling and spark plasma sintering (SPS) process. The addition of MnSb₂Se₄ to Bi_0.48Sb_1.52Te₃ increased the hole concentration while slightly decreasing the Seebeck coefficient, thus optimising the electrical transport properties of the bulk material. In addition, the second phases of MnSb₂Se₄ and Bi_0.48Sb_1.52Te₃ were observed in the Bi_0.48Sb_1.52Te₃ matrix. The nanoparticles in the semi-coherent second phase of MnSb₂Se₄ behaved as scattering centres for phonons, yielding a reduction in the lattice thermal conductivity. Substantial enhancement of the figure of merit, ZT, has been achieved for Bi_0.48Sb_1.52Te₃ by adding an Mn_0.8Cu_0.2Sb₂Se₄ (2 mol%) sample, for a wide range of temperatures, with a peak value of 1.43 at 375 K, corresponding to ~40% improvement over its Bi_0.48Sb_1.52Te₃ counterpart. Such enhancement of the thermoelectric (TE) performance of p-type Bi₂Te₃ based materials is believed to be advantageous for practical applications.

Key words: Bi_0.48Sb_1.52Te₃, thermoelectric materials, semi-coherent second phase, ZT enhancement

中图分类号: (Thermoelectric and thermomagnetic effects)

72.15.Jf

74.25.fg (Thermoelectric effects)

曹丙垒, 简基康, 葛炳辉, 李善明, 王浩, 刘骄, 赵怀周. Improved thermoelectric performance in p-type Bi_0.48Sb_1.52Te₃ bulk material by adding MnSb₂Se₄[J]. 中国物理B, 2017, 26(1): 17202-017202.

Binglei Cao(曹丙垒), Jikang Jian(简基康), Binghui Ge(葛炳辉), Shanming Li(李善明), Hao Wang(王浩), Jiao Liu(刘骄), Huaizhou Zhao(赵怀周). Improved thermoelectric performance in p-type Bi_0.48Sb_1.52Te₃ bulk material by adding MnSb₂Se₄[J]. Chin. Phys. B, 2017, 26(1): 17202-017202.

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Improved thermoelectric performance in p-type Bi_0.48Sb_1.52Te₃ bulk material by adding MnSb₂Se₄

Improved thermoelectric performance in p-type Bi_0.48Sb_1.52Te₃ bulk material by adding MnSb₂Se₄

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