中国物理B ›› 2017, Vol. 26 ›› Issue (1): 16601-016601.doi: 10.1088/1674-1056/26/1/016601

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

Dongli Zhang(张冬利), Mingxiang Wang(王明湘), Man Wong(王文), Hoi-Sing Kwok(郭海成)   

  1. 1. Department of Microelectronics, Soochow University, Suzhou 215006, China;
    2. Center for Display Research, Department of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
  • 收稿日期:2016-08-29 修回日期:2016-10-25 出版日期:2017-01-05 发布日期:2017-01-05
  • 通讯作者: Mingxiang Wang E-mail:mingxiang_wang@suda.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61301077 and 61574096), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20130319), and the Science and Technology Program of Suzhou City, China (Grant No. SYG201538).

Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

Dongli Zhang(张冬利)1,2, Mingxiang Wang(王明湘)1, Man Wong(王文)2, Hoi-Sing Kwok(郭海成)2   

  1. 1. Department of Microelectronics, Soochow University, Suzhou 215006, China;
    2. Center for Display Research, Department of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Kowloon, Hong Kong, China
  • Received:2016-08-29 Revised:2016-10-25 Online:2017-01-05 Published:2017-01-05
  • Contact: Mingxiang Wang E-mail:mingxiang_wang@suda.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61301077 and 61574096), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20130319), and the Science and Technology Program of Suzhou City, China (Grant No. SYG201538).

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摘要：

Crystallization of amorphous silicon (a-Si) which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization (MIC) polycrystalline silicon (poly-Si) regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-Si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-Si beyond the MIC front. A minimum diffusion coefficient of 1.84×10-9 cm2/s at 550℃ is estimated for the trace nickel diffusion in a-Si.

关键词: metal-induced crystallization, poly-Si, nickel, diffusion coefficient

Abstract:

Crystallization of amorphous silicon (a-Si) which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization (MIC) polycrystalline silicon (poly-Si) regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-Si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-Si beyond the MIC front. A minimum diffusion coefficient of 1.84×10-9 cm2/s at 550℃ is estimated for the trace nickel diffusion in a-Si.

Key words: metal-induced crystallization, poly-Si, nickel, diffusion coefficient

中图分类号:  (Theory of diffusion and ionic conduction in solids)

  • 66.30.Dn
81.05.Gc (Amorphous semiconductors) 68.35.bg (Semiconductors)