Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

doi:10.1088/1674-1056/25/4/048503

中国物理B ›› 2016, Vol. 25 ›› Issue (4): 48503-048503.doi: 10.1088/1674-1056/25/4/048503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

Xiao-Wen Xi(席晓文), Chang-Chun Chai(柴常春), Gang Zhao(赵刚), Yin-Tang Yang(杨银堂), Xin-Hai Yu(于新海), Yang Liu(刘阳)

1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 701107, China;
2 Complicated Electromagnetic Environment Laboratory of China Academy of Engineering Physics, Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900, China

收稿日期:2015-10-26 修回日期:2015-12-06 出版日期:2016-04-05 发布日期:2016-04-05
通讯作者: Xiao-Wen Xi E-mail:xixw841003@163.com
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2014CB339900), and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (CAEP) (Grant No. 2015-0214.XY.K).

Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

Xiao-Wen Xi(席晓文)¹, Chang-Chun Chai(柴常春)¹, Gang Zhao(赵刚)², Yin-Tang Yang(杨银堂)¹, Xin-Hai Yu(于新海)¹, Yang Liu(刘阳)¹

1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 701107, China;
2 Complicated Electromagnetic Environment Laboratory of China Academy of Engineering Physics, Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900, China

Received:2015-10-26 Revised:2015-12-06 Online:2016-04-05 Published:2016-04-05
Contact: Xiao-Wen Xi E-mail:xixw841003@163.com
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2014CB339900), and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (CAEP) (Grant No. 2015-0214.XY.K).

摘要/Abstract

摘要： The damage effect and mechanism of the electromagnetic pulse (EMP) on the GaAs pseudomorphic high electron mobility transistor (PHEMT) are investigated in this paper. By using the device simulation software, the distributions and variations of the electric field, the current density and the temperature are analyzed. The simulation results show that there are three physical effects, i.e., the forward-biased effect of the gate Schottky junction, the avalanche breakdown, and the thermal breakdown of the barrier layer, which influence the device current in the damage process. It is found that the damage position of the device changes with the amplitude of the step voltage pulse. The damage appears under the gate near the drain when the amplitude of the pulse is low, and it also occurs under the gate near the source when the amplitude is sufficiently high, which is consistent with the experimental results.

关键词: PHEMT, the electromagnetic pulse, damage effect

Abstract: The damage effect and mechanism of the electromagnetic pulse (EMP) on the GaAs pseudomorphic high electron mobility transistor (PHEMT) are investigated in this paper. By using the device simulation software, the distributions and variations of the electric field, the current density and the temperature are analyzed. The simulation results show that there are three physical effects, i.e., the forward-biased effect of the gate Schottky junction, the avalanche breakdown, and the thermal breakdown of the barrier layer, which influence the device current in the damage process. It is found that the damage position of the device changes with the amplitude of the step voltage pulse. The damage appears under the gate near the drain when the amplitude of the pulse is low, and it also occurs under the gate near the source when the amplitude is sufficiently high, which is consistent with the experimental results.

Key words: PHEMT, the electromagnetic pulse, damage effect

中图分类号: (Field effect devices)

85.30.Tv

84.40.-x (Radiowave and microwave (including millimeter wave) technology)

席晓文, 柴常春, 赵刚, 杨银堂, 于新海, 刘阳. Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse[J]. 中国物理B, 2016, 25(4): 48503-048503.

Xiao-Wen Xi(席晓文), Chang-Chun Chai(柴常春), Gang Zhao(赵刚), Yin-Tang Yang(杨银堂), Xin-Hai Yu(于新海), Yang Liu(刘阳). Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse[J]. Chin. Phys. B, 2016, 25(4): 48503-048503.

参考文献 18

[1]	Mansson D, Thottappillil R, Backstrom M and Lunden O 2008 IEEE Trans. Electromagn. Compat. 50 101
[2]	Chai C C, Yang Y T, Zhang B, Leng P, Yang Y and Rao W 2009 Semicond. Sci. Technol. 24 035003
[3]	Grutchfield H B and Moutoux T J 1966 IEEE Trans. Electron Dev. 13 743
[4]	Habing D H 1970 IEEE Trans. Nucl. Sci. 6 360
[5]	Richardson R E, Puglielli V G and Amadori R A 1975 IEEE Trans. Electromagn. Compat. 17 216
[6]	Zhou H A, Du Z W and Gong K 2005 High Power Laser and Particle Beams 12 1861 (in Chinese)
[7]	Fan J P, Zhang L, Jia X Z 2010 High Power Laser and Particle Beams 22 1319 (in Chinese)
[8]	Chai C C, Xi X W, Ren X R, Yang Y T and Ma Z Y 2010 Acta Phys. Sin. 59 8118 (in Chinese)
[9]	Liu J, Chen Y G, Tan Z L, Yang J, Zhang X J and Wang Z X 2011 J. Semicond. 32 104003
[10]	Ma Z Y, Chai C C, Ren X R, Yang Y T and Chen B 2012 Acta Phys. Sin. 61 078501 (in Chinese)
[11]	Ma Z Y, Chai C C, Ren X R, Yang Y T, Zhao Y B and Qiao L P 2013 Chin. Phys. B 22 028502
[12]	Ren X R, Chai C C, Ma Z Y, Yang Y T, Qi L P and Shi C L 2013 Acta Phys. Sin. 62 068501 (in Chinese)
[13]	Zhang C B, Zhang J D, Wang H G and Du G X 2015 Microelectronics Reliability 55 508
[14]	Yu X H, Chai C C, Liu Y, Yang Y T and Xi X W 2015 Chin. Phys. B 24 048502
[15]	Zhang C B, Wang H G and Zhang J D 2014 High Power Laser and Particle Beams 26 063014 (in Chinese)
[16]	Shi M, Wu G J 2008 Physics of Semiconductor Devices, 3nd edn. (Xi'an: Xi'an Jiaotong University Press) p. 120
[17]	Zhou H A, Du Z W and Gong K 2005 High Power Laser and Particle Beams 5 783 (in Chinese)
[18]	Li Y, Xuan C, Xie H Y, Xia H F, Wang J G 2013 High Power Laser and Particle Beams 25 2061

Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 18

相关文章 5

Metrics

本文评价

推荐阅读 0

[1]	李慧, 柴常春, 刘彧千, 吴涵, 杨银堂. Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves[J]. 中国物理B, 2018, 27(8): 88502-088502.
[2]	席晓文, 柴常春, 刘阳, 杨银堂, 樊庆扬, 史春蕾. Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse[J]. 中国物理B, 2016, 25(8): 88504-088504.
[3]	吴立枢, 赵岩, 沈宏昌张有涛, 陈堂胜. Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip[J]. 中国物理B, 2016, 25(6): 67306-067306.
[4]	刘阳, 柴常春, 杨银堂, 孙静, 李志鹏. Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave[J]. 中国物理B, 2016, 25(4): 48504-048504.
[5]	于新海, 柴常春, 刘阳, 杨银堂, 席晓文. Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor[J]. , 2015, 24(4): 48502-048502.