Aluminum incorporation efficiencies in A-and C-plane AlGaN grown by MOVPE

doi:10.1088/1674-1056/25/4/048105

中国物理B ›› 2016, Vol. 25 ›› Issue (4): 48105-048105.doi: 10.1088/1674-1056/25/4/048105

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Aluminum incorporation efficiencies in A-and C-plane AlGaN grown by MOVPE

Dong-Yue Han(韩东岳), Hui-Jie Li(李辉杰), Gui-Juan Zhao(赵桂娟), Hong-Yuan Wei(魏鸿源), Shao-Yan Yang(杨少延), Lian-Shan Wang(汪连山)

Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2015-10-07 修回日期:2015-12-29 出版日期:2016-04-05 发布日期:2016-04-05
通讯作者: Hui-Jie Li E-mail:hjli2009@semi.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61504128, 61504129, 61274041, and 11275228), the National Basic Research Program of China (Grant No. 2012CB619305), the National High Technology Research and Development Program of China (Grant Nos. 2014AA032603, 2014AA032609, and 2015AA010801), and the Guangdong Provincial Scientific and Technologic Planning Program, China (Grant No. 2014B010119002).

Aluminum incorporation efficiencies in A-and C-plane AlGaN grown by MOVPE

Dong-Yue Han(韩东岳), Hui-Jie Li(李辉杰), Gui-Juan Zhao(赵桂娟), Hong-Yuan Wei(魏鸿源), Shao-Yan Yang(杨少延), Lian-Shan Wang(汪连山)

Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2015-10-07 Revised:2015-12-29 Online:2016-04-05 Published:2016-04-05
Contact: Hui-Jie Li E-mail:hjli2009@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61504128, 61504129, 61274041, and 11275228), the National Basic Research Program of China (Grant No. 2012CB619305), the National High Technology Research and Development Program of China (Grant Nos. 2014AA032603, 2014AA032609, and 2015AA010801), and the Guangdong Provincial Scientific and Technologic Planning Program, China (Grant No. 2014B010119002).

摘要/Abstract

摘要： The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane AlGaN films grown by metalorganic vapour phase epitaxy (MOVPE) are investigated. It is found that the aluminum content in A-plane AlGaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 ℃. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/III ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the AlGaN films, especially nonpolar AlGaN epilayers.

关键词: metalorganic chemical vapor deposition, nitrides, semiconducting III-V materials, semiconducting ternary compounds

Abstract: The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane AlGaN films grown by metalorganic vapour phase epitaxy (MOVPE) are investigated. It is found that the aluminum content in A-plane AlGaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 ℃. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/III ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the AlGaN films, especially nonpolar AlGaN epilayers.

Key words: metalorganic chemical vapor deposition, nitrides, semiconducting III-V materials, semiconducting ternary compounds

中图分类号: (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

81.15.Gh

77.84.Bw (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.) 61.72.uj (III-V and II-VI semiconductors) 74.70.Dd (Ternary, quaternary, and multinary compounds)

韩东岳, 李辉杰, 赵桂娟, 魏鸿源, 杨少延, 汪连山. Aluminum incorporation efficiencies in A-and C-plane AlGaN grown by MOVPE[J]. 中国物理B, 2016, 25(4): 48105-048105.

Dong-Yue Han(韩东岳), Hui-Jie Li(李辉杰), Gui-Juan Zhao(赵桂娟), Hong-Yuan Wei(魏鸿源), Shao-Yan Yang(杨少延), Lian-Shan Wang(汪连山). Aluminum incorporation efficiencies in A-and C-plane AlGaN grown by MOVPE[J]. Chin. Phys. B, 2016, 25(4): 48105-048105.

参考文献 17

[1]	Mayes K, Yasan A, McClintock R, Shiell D, Darvish S R, Kung P and Razeghi M 2004 Appl. Phys. Lett. 84 1046
[2]	Shatalov M, Sun W H, Lunev A, Hu X H, Dobrinsky A, Bilenko Y, Yang J W, Shur M, Gaska R, Moe C, Garrett G and Wraback M 2012 Appl. Phys. Express 5 082101
[3]	Sang L W, Qin Z X, Fang H, Zhang Y Z, Li T, Xu Z Y, Yang Z J, Shen B, Zhang G Y, Li S P, Yang W H, Chen H Y, Liu D Y and Kang J Y 2009 Chin. Phys. Lett. 26 117801
[4]	Yoshida H, Yamashita Y, Kuwabara M and Kan H 2008 Appl. Phys. Lett. 93 241106
[5]	Xie Z L, Zhang R, Xiu X Q, Han P, Liu B, Chen L, Yu H Q, Jiang R L, Shi Y and Zheng Y D 2007 Acta Phys. Sin. 56 6717 (in Chinese)
[6]	Zhao D G, Zhu J J, Jiang D S, Yang H, Liang J W, Li X Y and Gong H M 2006 J. Cryst. Growth 289 72
[7]	Jung S, Chang Y, Bang K H, Kim H G, Choi Y H, Hwang S M and Baik K H 2012 Semicond. Sci. Technol. 27 024017
[8]	Mihopoulos T G, Gupta V and Jensen K F 1998 J. Cryst. Growth 195 733
[9]	Kondratyev A V, Talalaev R A, Lundin W V, Sakharov A V, Tsatsul'nikov A V, Zavarin E E, Fomin A V and Sizov D S 2004 J. Cryst. Growth 272 420
[10]	Dauelsberg M, Brien D, Rauf H, Reiher F, Baumgartl J, Haberlen O, Segal A S, Lobanova A V, Yakovlev E V and Talalaev R A 2014 J. Cryst. Growth 393 103
[11]	Kang T T, Liu X, Zhang R Q, Hu W G, Cong G, Zhao F A and Zhu Q 2006 Appl. Phys. Lett. 89 071113
[12]	Xu X Q, Guo Y, Liu X L, Liu J M, Song H P, Zhang B A, Wang J, Yang S Y, Wei H Y, Zhu Q S and Wang Z G 2011 Cryst. Eng. Comm. 13 1580
[13]	Wang J X, Wang L S, Yang S Y, Li H J, Zhao G J, Zhang H, Wei H Y, Jiao C M, Zhu Q S and Wang Z G 2014 Chin. Phys. B 23 026801
[14]	Kim H J, Choi S, Yoo D, Ryou J H and Dupuis R D 2008 J. Cryst. Growth 310 4880
[15]	Song K M, Kim J M, Kang B K, Yoon D H, Kang S, Lee S W and Lee S N 2012 Appl. Phys. Lett. 100 212103
[16]	Yakovlev E V, Talalaev R A, Segal A S, Lobanova A, Lundin W V, Zavarin E E, Sinitsyn M A, Tsatsulnikov A F and Nikolaev A E 2008 J. Cryst. Growth 310 4862
[17]	Zavarin E E, Sizov D S, Lundin W V, Tsatsulnikov A F, Talalaev R A, Kondratyev A V, and Bord O V 2005 Proceedings of the Fifteenth International European Conference on Chemical Vapor Deposition, September 4-9, 2005, Bochum, Germany, p. 299

Aluminum incorporation efficiencies in A-and C-plane AlGaN grown by MOVPE

Aluminum incorporation efficiencies in A-and C-plane AlGaN grown by MOVPE

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