Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

doi:10.1088/1674-1056/25/3/038503

中国物理B ›› 2016, Vol. 25 ›› Issue (3): 38503-038503.doi: 10.1088/1674-1056/25/3/038503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

Liuan Li(李柳暗), Jiaqi Zhang(张家琦), Yang Liu(刘扬), Jin-Ping Ao(敖金平)

1. School of Microelectronics, Sun Yat-Sen University, Guangzhou 510275, China;
2. Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan

收稿日期:2015-06-14 修回日期:2015-11-11 出版日期:2016-03-05 发布日期:2016-03-05
通讯作者: Yang Liu, Jin-Ping Ao E-mail:liuy69@mail.sysu.edu.cn;jpao@ee.tokushima-u.ac.jp
基金资助:
Project supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260).

Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

Liuan Li(李柳暗)¹, Jiaqi Zhang(张家琦)², Yang Liu(刘扬)¹, Jin-Ping Ao(敖金平)²

1. School of Microelectronics, Sun Yat-Sen University, Guangzhou 510275, China;
2. Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan

Received:2015-06-14 Revised:2015-11-11 Online:2016-03-05 Published:2016-03-05
Contact: Yang Liu, Jin-Ping Ao E-mail:liuy69@mail.sysu.edu.cn;jpao@ee.tokushima-u.ac.jp
Supported by:
Project supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260).

摘要/Abstract

摘要： In this paper, TiN/AlO_x gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 Ω· mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlO_x gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs.

关键词: metal-oxide-semiconductor heterostructure field-effect transistors, low temperature ohmic process, inductively coupled plasma

Abstract: In this paper, TiN/AlO_x gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 Ω· mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlO_x gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs.

Key words: metal-oxide-semiconductor heterostructure field-effect transistors, low temperature ohmic process, inductively coupled plasma

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

73.61.Ey (III-V semiconductors) 81.15.Cd (Deposition by sputtering)

李柳暗, 张家琦, 刘扬, 敖金平. Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature[J]. 中国物理B, 2016, 25(3): 38503-038503.

Liuan Li(李柳暗), Jiaqi Zhang(张家琦), Yang Liu(刘扬), Jin-Ping Ao(敖金平). Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature[J]. Chin. Phys. B, 2016, 25(3): 38503-038503.

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Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

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