Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

doi:10.1088/1674-1056/25/3/037306

中国物理B ›› 2016, Vol. 25 ›› Issue (3): 37306-037306.doi: 10.1088/1674-1056/25/3/037306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

1. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

收稿日期:2015-09-17 修回日期:2015-10-26 出版日期:2016-03-05 发布日期:2016-03-05
通讯作者: Qing-Wen Song, Xiao-Yan Tang E-mail:qwsong@xidian.edu.cn;xytang@mail.xidian.edu.cn
基金资助:
Projcet supported by the National Natural Science Foundation of China (Grant Nos. 61404098, 61176070, and 61274079), the Doctoral Fund of Ministry of Education of China (Grant Nos. 20110203110010 and 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

Qing-Wen Song(宋庆文)^1,2, Xiao-Yan Tang(汤晓燕)², Yan-Jing He(何艳静)², Guan-Nan Tang(唐冠男)²,Yue-Hu Wang(王悦湖)², Yi-Meng Zhang(张艺蒙)², Hui Guo(郭辉)², Ren-Xu Jia(贾仁需)²,Hong-Liang Lv(吕红亮)², Yi-Men Zhang(张义门)², Yu-Ming Zhang(张玉明)²

1. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

Received:2015-09-17 Revised:2015-10-26 Online:2016-03-05 Published:2016-03-05
Contact: Qing-Wen Song, Xiao-Yan Tang E-mail:qwsong@xidian.edu.cn;xytang@mail.xidian.edu.cn
Supported by:
Projcet supported by the National Natural Science Foundation of China (Grant Nos. 61404098, 61176070, and 61274079), the Doctoral Fund of Ministry of Education of China (Grant Nos. 20110203110010 and 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

摘要/Abstract

摘要： In this paper, the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFFETs) have been fabricated and characterized. A sandwich-(nitridation-oxidation-nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H-SiC/SiO₂ were examined by the measurement of HF I-V, G-V, and C-V over a range of frequencies. The ideal C-V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H-SiC was reduced to 2×10¹¹ eV^-1·cm^-2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field-effect mobility is about 32.5 cm²·V^-1·s^-1, and the maximum peak field-effect mobility of 38 cm²· V^-1· s^-1 was achieved in fabricated lateral 4H-SiC MOSFFETs.

关键词: metal-oxide-semiconductor field-effect transistors, 4H-SiC, field-effect mobility, oxidation process

Abstract: In this paper, the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFFETs) have been fabricated and characterized. A sandwich-(nitridation-oxidation-nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H-SiC/SiO₂ were examined by the measurement of HF I-V, G-V, and C-V over a range of frequencies. The ideal C-V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H-SiC was reduced to 2×10¹¹ eV^-1·cm^-2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field-effect mobility is about 32.5 cm²·V^-1·s^-1, and the maximum peak field-effect mobility of 38 cm²· V^-1· s^-1 was achieved in fabricated lateral 4H-SiC MOSFFETs.

Key words: metal-oxide-semiconductor field-effect transistors, 4H-SiC, field-effect mobility, oxidation process

中图分类号: (Electronic transport in interface structures)

73.40.-c

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.61.Le (Other inorganic semiconductors)

宋庆文, 汤晓燕, 何艳静, 唐冠男, 王悦湖, 张艺蒙, 郭辉, 贾仁需, 吕红亮, 张义门, 张玉明. Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors[J]. 中国物理B, 2016, 25(3): 37306-037306.

Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yan-Jing He(何艳静), Guan-Nan Tang(唐冠男),Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需),Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明). Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors[J]. Chin. Phys. B, 2016, 25(3): 37306-037306.

参考文献 18

[1]	Liewih H, Dimitrijev S, Weitzel C E, and Harrison H B 2001 IEEE Trans. Electron Devices 48 1711
[2]	Song Q W, Zhang Y M, Han J S, Tanner P, Dimitrijev S, Zhang Y M, Zhang Y M, Tang X Y and Guo H 2013 Chin. Phys. B 22 027302
[3]	Tang X Y, Zhang Y M and Zhang Y M 2010 Chin. Phys. B 19 047204
[4]	Chen F P, Zhang Y M, Zhang Y M, Lu H L and Song Q W 2010 Chin. Phys. B 19 047305
[5]	Cooper J A, Melloch M R, Singh R, Agarwal A and Palmour J W 2002 IEEE Trans. Electron Devices 49 658
[6]	Sui Y, Tsuji T and Cooper J A Jr 2005 IEEE Electron Device Lett. 26 255
[7]	Ryu S H, Krishnaswami S, Hull B, Richmond J, Agarwal A and Hefner A 2006 IEEE International Symposium on Power Semiconductor Devices and IC 1
[8]	Wang J, Zhao T, Li J, Huang A Q, Callanan R, Husna F and Agarwal A 2008 IEEE Trans. Electron Devices 55 1798
[9]	Ryu S H, Hull B A, Dhar S, Cheng L, Zhang Q C, Richmond J, Das M K, Agarwal A K, Palmour J W, Lelis A J, Geil B and Scozzie C 2010 Mater. Sci. Forum 645-648 969
[10]	Howell R, Buchoff S, Campen S V, McNutt T, Ezis A, Nechay B, Kirby C, Sherwin M, Clarke C and Singh R 2008 IEEE Trans. Electron De-vices 55 1807
[11]	Lee W S, Lin C W, Yang M H, Huang C F, Gong J and Feng Z 2011 IEEE Electron Device Lett. 32 360
[12]	Tan Y, Kumar M, Sin J K O, Cai J and Lau J 2000 IEEE Electron Device Lett. 21 82
[13]	Zhang Y, Sheng K, Su M, Zhao J H, Alexandrov P, Li X, Fursin L and Weine M 2008 IEEE Trans. Electron Devices 55 1934
[14]	Haasmann D, Dimitrijev S, Han J S and Iacopi A 2014 Mater. Sci. Forum 778-780 627
[15]	Afanas'ev V V, Ciobanu F, Dimitrijev S, Pens G and Stesmans A 2005 Mater. Sci. Forum 483-485 563
[16]	Wang S, Di Ventra M, Kim S G and Pantelides S T 2001 Phys. Rev. Lett. 86 5946
[17]	Afanas'ev V V, Ciobanu F, Dimitrijev S, Pensl G and Stesmans A 2004 J. Phys.: Condens. Matter 16 S1839
[18]	Radtke C, Baumvol I J R, Morais J and Stedile F C 2001 Appl. Phys. Lett. 78 3601

Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

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