Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance

doi:10.1088/1674-1056/25/2/027305

中国物理B ›› 2016, Vol. 25 ›› Issue (2): 27305-027305.doi: 10.1088/1674-1056/25/2/027305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance

Yu-Ru Wang(王裕如), Yi-He Liu(刘祎鹤), Zhao-Jiang Lin(林兆江), Dong Fang(方冬), Cheng-Zhou Li(李成州), Ming Qiao(乔明), Bo Zhang(张波)

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
2. Institute of Electronic and Information Engineering in Dongguan, UESTC, Dongguan 523808, China

收稿日期:2015-09-06 修回日期:2015-10-22 出版日期:2016-02-05 发布日期:2016-02-05
通讯作者: Ming Qiao E-mail:qiaoming@uestc.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61376080), the Natural Science Foundation of Guangdong Province, China (Grant No. 2014A030313736), and the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2013J030).

Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance

Yu-Ru Wang(王裕如)¹, Yi-He Liu(刘祎鹤)¹, Zhao-Jiang Lin(林兆江)¹, Dong Fang(方冬)¹, Cheng-Zhou Li(李成州)¹, Ming Qiao(乔明)^1,2, Bo Zhang(张波)¹

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
2. Institute of Electronic and Information Engineering in Dongguan, UESTC, Dongguan 523808, China

Received:2015-09-06 Revised:2015-10-22 Online:2016-02-05 Published:2016-02-05
Contact: Ming Qiao E-mail:qiaoming@uestc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61376080), the Natural Science Foundation of Guangdong Province, China (Grant No. 2014A030313736), and the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2013J030).

摘要/Abstract

摘要：

An analytical model for a novel triple reduced surface field (RESURF) silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) field effect transistor with n-type top (N-top) layer, which can obtain a low on-state resistance, is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF SOI LDMOS is presented by solving the two-dimensional (2D) Poisson's equation, which can also be applied to single, double and conventional triple RESURF SOI structures. The breakdown voltage (BV) is formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of N-top layer (Q_ntop) is derived, which can give guidance for doping the N-top layer. All the analytical results are well verified by numerical simulation results, showing the validity of the presented model. Hence, the proposed model can be a good tool for the device designers to provide accurate first-order design schemes and physical insights into the high voltage triple RESURF SOI device with N-top layer.

关键词: analytical model, triple reduced surface field (RESURF), silicon-on-insulator (SOI), n-type top (N-top) layer

Abstract:

Key words: analytical model, triple reduced surface field (RESURF), silicon-on-insulator (SOI), n-type top (N-top) layer

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

73.40.Ty (Semiconductor-insulator-semiconductor structures) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Tv (Field effect devices)

王裕如, 刘祎鹤, 林兆江, 方冬, 李成州, 乔明, 张波. Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance[J]. 中国物理B, 2016, 25(2): 27305-027305.

Yu-Ru Wang(王裕如), Yi-He Liu(刘祎鹤), Zhao-Jiang Lin(林兆江), Dong Fang(方冬), Cheng-Zhou Li(李成州), Ming Qiao(乔明), Bo Zhang(张波). Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance[J]. Chin. Phys. B, 2016, 25(2): 27305-027305.

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Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance

Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance

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