Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films

doi:10.1088/1674-1056/25/2/027102

中国物理B ›› 2016, Vol. 25 ›› Issue (2): 27102-027102.doi: 10.1088/1674-1056/25/2/027102

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

收稿日期:2015-09-01 修回日期:2015-10-25 出版日期:2016-02-05 发布日期:2016-02-05
通讯作者: De-Gang Zhao E-mail:dgzhao@red.semi.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126), the National Natural Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films

Jing Yang(杨静)¹, De-Gang Zhao(赵德刚)¹, De-Sheng Jiang(江德生)¹, Ping Chen(陈平)¹, Zong-Shun Liu(刘宗顺)¹, Jian-Jun Zhu(朱建军)¹, Ling-Cong Le(乐伶聪)¹, Xiao-Jing Li(李晓静)¹, Xiao-Guang He(何晓光)¹, Li-Qun Zhang(张立群)², Hui Yang(杨辉)^1,2

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received:2015-09-01 Revised:2015-10-25 Online:2016-02-05 Published:2016-02-05
Contact: De-Gang Zhao E-mail:dgzhao@red.semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126), the National Natural Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

摘要/Abstract

摘要： Two series of p-GaN films grown at different temperatures are obtained by metal organic chemical vapor deposition (MOCVD). And the different variation behaviors of resistivity with growth condition for high- temperature(HT)-grown and low-temperature(LT)-grown p-GaN films are investigated. It is found that the resistivity of HT-grown p-GaN film is nearly unchanged when the NH₃ flow rate or reactor pressure increases. However, it decreases largely for LT-grown p-GaN film. These different variations may be attributed to the fact that carbon impurities are easy to incorporate into p-GaN film when the growth temperature is low. It results in a relatively high carbon concentration in LT-grown p-GaN film compared with HT-grown one. Therefore, carbon concentration is more sensitive to the growth condition in these samples, ultimately, leading to the different variation behaviors of resistivity for HT- and LT-grown ones.

关键词: nitride materials, p-type GaN, resistivity, carbon concentration

Abstract: Two series of p-GaN films grown at different temperatures are obtained by metal organic chemical vapor deposition (MOCVD). And the different variation behaviors of resistivity with growth condition for high- temperature(HT)-grown and low-temperature(LT)-grown p-GaN films are investigated. It is found that the resistivity of HT-grown p-GaN film is nearly unchanged when the NH₃ flow rate or reactor pressure increases. However, it decreases largely for LT-grown p-GaN film. These different variations may be attributed to the fact that carbon impurities are easy to incorporate into p-GaN film when the growth temperature is low. It results in a relatively high carbon concentration in LT-grown p-GaN film compared with HT-grown one. Therefore, carbon concentration is more sensitive to the growth condition in these samples, ultimately, leading to the different variation behaviors of resistivity for HT- and LT-grown ones.

Key words: nitride materials, p-type GaN, resistivity, carbon concentration

中图分类号: (Semiconductor compounds)

71.20.Nr

71.55.Eq (III-V semiconductors) 72.80.Ey (III-V and II-VI semiconductors) 78.55.Cr (III-V semiconductors)

杨静, 赵德刚, 江德生, 陈平, 刘宗顺, 朱建军, 乐伶聪, 李晓静, 何晓光, 张立群, 杨辉. Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films[J]. 中国物理B, 2016, 25(2): 27102-027102.

Jing Yang(杨静), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Ling-Cong Le(乐伶聪), Xiao-Jing Li(李晓静), Xiao-Guang He(何晓光), Li-Qun Zhang(张立群), Hui Yang(杨辉). Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films[J]. Chin. Phys. B, 2016, 25(2): 27102-027102.

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Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films

Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films

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