›› 2014, Vol. 23 ›› Issue (12): 126104-126104.doi: 10.1088/1674-1056/23/12/126104

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Temperature dependence of surface and structure properties of ZnCdO film

雷红文a b c, 阎大伟a, 张红b d, 王雪敏a c, 姚刚a, 吴卫东a c, 赵妍a   

  1. a Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China;
    b Institution of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China;
    c Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology and Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China;
    d School of Physical Science and Technology, Sichuan University, Chengdu 610065, China
  • 收稿日期:2014-03-19 修回日期:2014-06-18 出版日期:2014-12-15 发布日期:2014-12-15
  • 基金资助:
    Project supported by the Special Funds from the Ministry of National Science and Technology Major Instrumentation, China (Grant No. 2011YQ130018), the Open Foundation of Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology and Research Center of Laser Fusion, China Academy of Engineering Physics (Grant No. 12zxjk06), and the National High Technology Research and Development Program of China (863 Program).

Temperature dependence of surface and structure properties of ZnCdO film

Lei Hong-Wen (雷红文)a b c, Yan Da-Wei (阎大伟)a, Zhang Hong (张红)b d, Wang Xue-Min (王雪敏)a c, Yao Gang (姚刚)a, Wu Wei-Dong (吴卫东)a c, Zhao Yan (赵妍)a   

  1. a Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China;
    b Institution of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China;
    c Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology and Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China;
    d School of Physical Science and Technology, Sichuan University, Chengdu 610065, China
  • Received:2014-03-19 Revised:2014-06-18 Online:2014-12-15 Published:2014-12-15
  • Contact: Zhao Yan E-mail:zhaoyan-8@caep.ac.cn
  • Supported by:
    Project supported by the Special Funds from the Ministry of National Science and Technology Major Instrumentation, China (Grant No. 2011YQ130018), the Open Foundation of Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology and Research Center of Laser Fusion, China Academy of Engineering Physics (Grant No. 12zxjk06), and the National High Technology Research and Development Program of China (863 Program).

摘要: Zn1-xCdxO films are grown on c-sapphire substrates by laser molecular beam epitaxy (LMBE) at different temperatures. Their crystallographic structures, compositions, surface electronic structures are investigated. The a-axis lattice constant of Zn0.95Cd0.05O is 3.20 Å. Moreover, the epitaxial relationship shows a 30°-in-plane rotation of the film with respect to the c-sapphire substrate. When the substrate temperatures arrives at 500 ℃, the in situ reflection high-energy electron diffraction (RHEED) pattern of ZnCdO film shows sharp streaky pattern. The maximum Cd content of ZnCdO film grown at low substrate temperatures increases up to about 29.6 at.%, which is close to that of the ceramic target. In situ ultraviolet photoelectron spectroscopy (UPS) measurements demonstrate that ZnCdO film exhibits intense peaks at 4.7 eV and 10.7 eV below the Fermi level, which are assigned to the O 2p and Zn 3p states. Energetic distance between Zn 3d and Cd 4d is 0.60 eV. Above 470 nm, the thin film shows excellent optical transmission.

关键词: surface structure, ZnCdO films, laser molecular beam epitaxy

Abstract: Zn1-xCdxO films are grown on c-sapphire substrates by laser molecular beam epitaxy (LMBE) at different temperatures. Their crystallographic structures, compositions, surface electronic structures are investigated. The a-axis lattice constant of Zn0.95Cd0.05O is 3.20 Å. Moreover, the epitaxial relationship shows a 30°-in-plane rotation of the film with respect to the c-sapphire substrate. When the substrate temperatures arrives at 500 ℃, the in situ reflection high-energy electron diffraction (RHEED) pattern of ZnCdO film shows sharp streaky pattern. The maximum Cd content of ZnCdO film grown at low substrate temperatures increases up to about 29.6 at.%, which is close to that of the ceramic target. In situ ultraviolet photoelectron spectroscopy (UPS) measurements demonstrate that ZnCdO film exhibits intense peaks at 4.7 eV and 10.7 eV below the Fermi level, which are assigned to the O 2p and Zn 3p states. Energetic distance between Zn 3d and Cd 4d is 0.60 eV. Above 470 nm, the thin film shows excellent optical transmission.

Key words: surface structure, ZnCdO films, laser molecular beam epitaxy

中图分类号:  (Alloys )

  • 61.66.Dk
79.20.Ds (Laser-beam impact phenomena)