中国物理B ›› 2014, Vol. 23 ›› Issue (1): 18506-018506.doi: 10.1088/1674-1056/23/1/018506

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

Ahmet Kayaa, Sedat Zeyrekb, Sait Eren Sanc, Şmsettin Altindald   

  1. a Opticianry Department, Vocational School of Medical Sciences, Turgut Ozal University, Ankara 06370, Turkey;
    b Physics Department, Faculty Sciences, Dumlupinar University, Kütahya 43000, Turkey;
    c Physics Department, Gebze Institute of Technology, Kocaeli 41400, Turkey;
    d Physics Department, Faculty of Sciences, Gazi University, Ankara 06500, Turkey
  • 收稿日期:2013-03-31 修回日期:2013-06-08 出版日期:2013-11-12 发布日期:2013-11-12

Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

Ahmet Kayaa, Sedat Zeyrekb, Sait Eren Sanc, ?msettin Altindald   

  1. a Opticianry Department, Vocational School of Medical Sciences, Turgut Ozal University, Ankara 06370, Turkey;
    b Physics Department, Faculty Sciences, Dumlupinar University, Kütahya 43000, Turkey;
    c Physics Department, Gebze Institute of Technology, Kocaeli 41400, Turkey;
    d Physics Department, Faculty of Sciences, Gazi University, Ankara 06500, Turkey
  • Received:2013-03-31 Revised:2013-06-08 Online:2013-11-12 Published:2013-11-12
  • Contact: Ahmet Kaya E-mail:akaya@turgutozal.edu.tr

摘要: The perylene (C20H12) layer effect on the electrical and dielectric properties of Al/p-Si (MS) and Al/perylene/p-Si (MPS) diodes have been investigated and compared in the frequency range of 0.7 kHz–2 MHz. Experimental results show that C–V characteristics give an anomalous peak for two structures at low frequencies due to interface states (Nss) and series resistance (Rs). The increases in C and G/ω at low frequencies confirm that the charges at interface can easily follow an ac signal and yield excess capacitance and conductance. The frequency-dependent dielectric constant (ε’) and dielectric loss (ε") are subtracted using C and G/ω data at 1.5 V. The ε’ and ε" values are found to be strongly dependent on frequency and voltage, and their large values at low frequencies can be attributed to the excess polarization coming from charges at traps. Plots of ln(σ ac)–ln(ω) for two structures have two linear regions, with slopes of 0.369 and 1.166 for MS, and of 0.077 and 1.061 for MPS, respectively. From the C-2V characteristics, the doping acceptor atom concentration (NA) and barrier height (ΦB) for Schottky barrier diodes (SBDs) of MS and MPS types are also obtained to be 1.484×10^15 and 1.303×1015 cm-3, and 1.10 and 1.13 eV, respectively.

关键词: organic–, inorganic based Schottky diodes, perylene (C20H12) interfacial layer, electrical and dielectric properties, frequency and voltage dependence

Abstract: The perylene (C20H12) layer effect on the electrical and dielectric properties of Al/p-Si (MS) and Al/perylene/p-Si (MPS) diodes have been investigated and compared in the frequency range of 0.7 kHz–2 MHz. Experimental results show that C–V characteristics give an anomalous peak for two structures at low frequencies due to interface states (Nss) and series resistance (Rs). The increases in C and G/ω at low frequencies confirm that the charges at interface can easily follow an ac signal and yield excess capacitance and conductance. The frequency-dependent dielectric constant (ε’) and dielectric loss (ε") are subtracted using C and G/ω data at 1.5 V. The ε’ and ε" values are found to be strongly dependent on frequency and voltage, and their large values at low frequencies can be attributed to the excess polarization coming from charges at traps. Plots of ln(σ ac)–ln(ω) for two structures have two linear regions, with slopes of 0.369 and 1.166 for MS, and of 0.077 and 1.061 for MPS, respectively. From the C-2V characteristics, the doping acceptor atom concentration (NA) and barrier height (ΦB) for Schottky barrier diodes (SBDs) of MS and MPS types are also obtained to be 1.484×1015 and 1.303×1015 cm-3, and 1.10 and 1.13 eV, respectively.

Key words: organic–, inorganic based Schottky diodes, perylene (C20H12) interfacial layer, electrical and dielectric properties, frequency and voltage dependence

中图分类号:  (Surface barrier, boundary, and point contact devices)

  • 85.30.Hi
85.30.Kk (Junction diodes) 73.61.Ey (III-V semiconductors) 77.84.Jd (Polymers; organic compounds)