中国物理B ›› 2014, Vol. 23 ›› Issue (1): 18502-018502.doi: 10.1088/1674-1056/23/1/018502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Enhancing light extraction of GaN-based blue light-emitting diodes by a tuned nanopillar array

陈湛旭a b, 任远a, 肖国辉a, 李俊韬a, 陈夏a, 王雪华a, 金崇君a, 张佰君a   

  1. a State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China;
    b School of Electronic and Information, Guangdong Polytechnic Normal University, Guangzhou 510665, China
  • 收稿日期:2013-06-20 修回日期:2013-08-08 出版日期:2013-11-12 发布日期:2013-11-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10774195, U0834001, 10974263, 11174374, and 10725420), the Key Program of Ministry of Education, China (Grant No. 309024), the Program for New Century Excellent Talents in University of Ministry of Education of China, and the National Basic Research Program of China (Grant No. 2010CB923200).

Enhancing light extraction of GaN-based blue light-emitting diodes by a tuned nanopillar array

Chen Zhan-Xu (陈湛旭)a b, Ren Yuan (任远)a, Xiao Guo-Hui (肖国辉)a, Li Jun-Tao (李俊韬)a, Chen Xia (陈夏)a, Wang Xue-Hua (王雪华)a, Jin Chong-Jun (金崇君)a, Zhang Bai-Jun (张佰君)a   

  1. a State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China;
    b School of Electronic and Information, Guangdong Polytechnic Normal University, Guangzhou 510665, China
  • Received:2013-06-20 Revised:2013-08-08 Online:2013-11-12 Published:2013-11-12
  • Contact: Jin Chong-Jun E-mail:jinchjun@mail.sysu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10774195, U0834001, 10974263, 11174374, and 10725420), the Key Program of Ministry of Education, China (Grant No. 309024), the Program for New Century Excellent Talents in University of Ministry of Education of China, and the National Basic Research Program of China (Grant No. 2010CB923200).

摘要: Surface patterning of p-GaN to improve the light extraction efficiency of GaN-based blue light-emitting diodes (LEDs) has been investigated. Periodic nanopillar arrays on p-GaN have been fabricated by polystyrene (PS) nanosphere lithography; the diameter of the nanopillars can be tuned to optimize the electrical and optical properties of the LEDs. The electroluminescence intensity of the nanopillar-patterned LEDs is better than that of conventional LEDs; the greatest enhancement increased the intensity by a factor of 1.41 at a 20 mA injection current. The enhancements can be explained by a model of bilayer film on a GaN substrate. This method may serve as a practical approach to improve the efficiency of light extraction from LEDs.

关键词: light-emitting devices, nanosphere lithography, electroluminescence, extraction efficiency

Abstract: Surface patterning of p-GaN to improve the light extraction efficiency of GaN-based blue light-emitting diodes (LEDs) has been investigated. Periodic nanopillar arrays on p-GaN have been fabricated by polystyrene (PS) nanosphere lithography; the diameter of the nanopillars can be tuned to optimize the electrical and optical properties of the LEDs. The electroluminescence intensity of the nanopillar-patterned LEDs is better than that of conventional LEDs; the greatest enhancement increased the intensity by a factor of 1.41 at a 20 mA injection current. The enhancements can be explained by a model of bilayer film on a GaN substrate. This method may serve as a practical approach to improve the efficiency of light extraction from LEDs.

Key words: light-emitting devices, nanosphere lithography, electroluminescence, extraction efficiency

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
81.16.Nd (Micro- and nanolithography) 78.60.Fi (Electroluminescence)