Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

doi:10.1088/1674-1056/23/1/018501

Chin. Phys. B ›› 2014, Vol. 23 ›› Issue (1): 18501-018501.doi: 10.1088/1674-1056/23/1/018501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

李聪, 庄奕琪, 张丽, 靳刚

School of Microelectronics, Xidian University, Xi’an 710071, China

收稿日期:2013-04-24 修回日期:2013-06-17 出版日期:2013-11-12 发布日期:2013-11-12
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61204092 and 61076101) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. K50511250001).

Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

Li Cong (李聪), Zhuang Yi-Qi (庄奕琪), Zhang Li (张丽), Jin Gang (靳刚)

School of Microelectronics, Xidian University, Xi’an 710071, China

Received:2013-04-24 Revised:2013-06-17 Online:2013-11-12 Published:2013-11-12
Contact: Li Cong E-mail:cong.li@mail.xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61204092 and 61076101) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. K50511250001).

摘要/Abstract

摘要： Based on the quasi-two-dimensional (2D) solution of Poisson’s equation in two continuous channel regions, an analytical threshold voltage model for short-channel junctionless dual-material cylindrical surrounding-gate (JLDMCSG) metal-oxide-semiconductor field-effect transistor (MOSFET) is developed. Using the derived model, channel potential distribution, horizontal electrical field distribution, and threshold voltage roll-off of JLDMCSG MOSFET are investigated. Compared with junctionless single-material CSG (JLSGCSG) MOSFET, JLDMCSG MOSFET can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is also revealed that threshold voltage roll-off of JLDMCSG can be significantly reduced by adopting both a small oxide thickness and a small silicon channel radius. The model is verified by comparing its calculated results with that obtained from three-dimensional (3D) numerical device simulator ISE.

关键词: junctionless device, surrounding-gate MOSFET, dual-material gate, analytical model

Abstract: Based on the quasi-two-dimensional (2D) solution of Poisson’s equation in two continuous channel regions, an analytical threshold voltage model for short-channel junctionless dual-material cylindrical surrounding-gate (JLDMCSG) metal-oxide-semiconductor field-effect transistor (MOSFET) is developed. Using the derived model, channel potential distribution, horizontal electrical field distribution, and threshold voltage roll-off of JLDMCSG MOSFET are investigated. Compared with junctionless single-material CSG (JLSGCSG) MOSFET, JLDMCSG MOSFET can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is also revealed that threshold voltage roll-off of JLDMCSG can be significantly reduced by adopting both a small oxide thickness and a small silicon channel radius. The model is verified by comparing its calculated results with that obtained from three-dimensional (3D) numerical device simulator ISE.

Key words: junctionless device, surrounding-gate MOSFET, dual-material gate, analytical model

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 02.60.Cb (Numerical simulation; solution of equations)

李聪, 庄奕琪, 张丽, 靳刚. Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate[J]. Chin. Phys. B, 2014, 23(1): 18501-018501.

Li Cong (李聪), Zhuang Yi-Qi (庄奕琪), Zhang Li (张丽), Jin Gang (靳刚). Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate[J]. Chin. Phys. B, 2014, 23(1): 18501-018501.

参考文献 17

[1]	Yu B, Lu W Y, Lu H and Taur Y 2007 IEEE Tran. Electron Dev. 54 492
[2]	Li Z C 2008 Chin. Phys. B 17 4312
[3]	Li C, Zhuang Y Q, Zhang L and Bao J L 2012 Chin. Phys. B 21 048501
[4]	Lee C W, Borne A, Ferain I, Afzalian A, Yan R, Akhavan N D, Razavi P and Colinge J P 2010 IEEE Tran. Electron Dev. 57 620
[5]	Chiang T K 2012 IEEE Tran. Electron Dev. 59 3127
[6]	Jin X S, Liu X, Hyuck-In K and Jong-Ho L 2013 Chin. Phys. Lett. 30 038502
[7]	Han M H, Chang C Y, Jhan Y R, Wu J J, Chen H B, Cheng Y C and Wu Y C 2013 IEEE Electron Dev. Lett. 34 157
[8]	Colinge J P, Lee C W, Afzalian A, Akhavan N D, Yan R, Ferain I, Razavi P, O’Neill B, Blake A, White M, Kelleher A M, McCarthy B and Murphy R 2010 Nat. Nano. 5 225
[9]	Lee C W, Ferain I, Afzalian A, Yan R, Akhavan N D, Razavi P and Colinge J P 2010 Solid-State Electron. 54 97
[10]	Doria R T, Pavanello M A, Trevisoli R D, de Souza M, Lee C W, Ferain I, Akhavan N D, Yan R, Razavi P, Yu R, Kranti A and Colinge J P 2011 IEEE Tran. Electron Dev. 58 2511
[11]	Lou H, Zhang L, Zhu Y, Lin X, Yang S, He J and Chan M 2012 IEEE Tran. Electron Dev. 59 1829
[12]	Duarte J P, Choi S J, Moon D I and Choi Y K 2012 IEEE Electron Dev. Lett. 33 155
[13]	Trevisoli R D, Doria R T, de Souza M and Pavanello M A 2011 Semicond. Sci. Technol. 26 105009
[14]	Jimenez D, Iniguez B, Sune J, Marsal L F, Pallares J, Roig J and Flores D 2004 IEEE Electron Dev. Lett. 25 571
[15]	Zhang X J, Yang Y T, Duan B X, Chai C C, Song K and Chen B 2012 Chin. Phys. B 21 097302
[16]	Saxena M, Haldar S, Gupta M and Gupta R S 2002 IEEE Tran. Electron Dev. 49 1928
[17]	Omura Y, Horiguchi S, Tabe M and Kishi K 1993 IEEE Electron Dev. Lett. 14 569

Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

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