中国物理B ›› 2013, Vol. 22 ›› Issue (9): 97303-097303.doi: 10.1088/1674-1056/22/9/097303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

张凯a, 曹梦逸a, 雷晓艺a, 赵胜雷a, 杨丽媛a, 郑雪峰a, 马晓华a b, 郝跃a   

  1. a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
    b School of Technical Physics, Xidian University, Xi’an 710071, China
  • 收稿日期:2013-02-05 修回日期:2013-03-26 出版日期:2013-07-26 发布日期:2013-07-26
  • 基金资助:
    Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant No. K5051225013).

Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

Zhang Kai (张凯)a, Cao Meng-Yi (曹梦逸)a, Lei Xiao-Yi (雷晓艺)a, Zhao Sheng-Lei (赵胜雷)a, Yang Li-Yuan (杨丽媛)a, Zheng Xue-Feng (郑雪峰)a, Ma Xiao-Hua (马晓华)a b, Hao Yue (郝跃)a   

  1. a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China;
    b School of Technical Physics, Xidian University, Xi’an 710071, China
  • Received:2013-02-05 Revised:2013-03-26 Online:2013-07-26 Published:2013-07-26
  • Contact: Ma Xiao-Hua E-mail:xhma@xidian.edu.cn
  • Supported by:
    Project supported by the Program for New Century Excellent Talents in University, China (Grant No. NCET-12-0915), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Funds for the Central Universities, China (Grant No. K5051225013).

摘要: A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate (FP) techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and breakdown performance are investigated simultaneously by using a two-dimensional physics-based simulation. Compared with the conventional T-gate structures with a field plate length of 1.2 μm, this field plate structure can induce the small signal power gain at 10 GHz to increase by 5-9.5 dB, which depends on the distance between source FP and dramatically shortened gate FP. This technique minimizes the parasitic capacitances, especially the gate-to-drain capacitance, showing a substantial potential for millimeter-wave, high power applications.

关键词: GaN-based HEMTs, breakdown characteristics, field plates, power gain

Abstract: A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate (FP) techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and breakdown performance are investigated simultaneously by using a two-dimensional physics-based simulation. Compared with the conventional T-gate structures with a field plate length of 1.2 μm, this field plate structure can induce the small signal power gain at 10 GHz to increase by 5-9.5 dB, which depends on the distance between source FP and dramatically shortened gate FP. This technique minimizes the parasitic capacitances, especially the gate-to-drain capacitance, showing a substantial potential for millimeter-wave, high power applications.

Key words: GaN-based HEMTs, breakdown characteristics, field plates, power gain

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.61.Ey (III-V semiconductors) 85.30.Tv (Field effect devices)