Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor

doi:10.1088/1674-1056/22/3/038501

中国物理B ›› 2013, Vol. 22 ›› Issue (3): 38501-038501.doi: 10.1088/1674-1056/22/3/038501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor

李妤晨, 张鹤鸣, 张玉明, 胡辉勇, 王斌, 娄永乐, 周春宇

Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2012-05-08 修回日期:2012-08-15 出版日期:2013-02-01 发布日期:2013-02-01
基金资助:
Project supported by the National Ministries and Commissions, China (Grant Nos. 51308040203 and 6139801), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 72105499 and 72104089), and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2010JQ8008).

Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor

Li Yu-Chen (李妤晨), Zhang He-Ming (张鹤鸣), Zhang Yu-Ming (张玉明), Hu Hui-Yong (胡辉勇), Wang Bin (王斌), Lou Yong-Le (娄永乐), Zhou Chun-Yu (周春宇)

Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2012-05-08 Revised:2012-08-15 Online:2013-02-01 Published:2013-02-01
Contact: Li Yu-Chen E-mail:yuchenlee09@gmail.com
Supported by:
Project supported by the National Ministries and Commissions, China (Grant Nos. 51308040203 and 6139801), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 72105499 and 72104089), and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2010JQ8008).

摘要/Abstract

摘要： The tunneling field-effect transistor (TFET) is a potential candidate for the post-CMOS era. In this paper, a threshold voltage model is developed for this new kind of device. First, two-dimensional (2D) models are used to describe the distributions of potential and electric field in the channel and two depletion regions. Then based on the physical definition of threshold voltage for the nanoscale TFET, the threshold voltage model is developed. The accuracy of the proposed model is verified by comparing the calculated results with the 2D device simulation data. It has been demonstrated that the effects of varying the device parameters can easily be investigated using the model presented in this paper. This threshold voltage model provides a valuable reference to the TFET device design, simulation, and fabrication.

关键词: tunnel field-effect transistor, band-to-band tunneling, subthreshold swing, gated P-I-N diode

Abstract: The tunneling field-effect transistor (TFET) is a potential candidate for the post-CMOS era. In this paper, a threshold voltage model is developed for this new kind of device. First, two-dimensional (2D) models are used to describe the distributions of potential and electric field in the channel and two depletion regions. Then based on the physical definition of threshold voltage for the nanoscale TFET, the threshold voltage model is developed. The accuracy of the proposed model is verified by comparing the calculated results with the 2D device simulation data. It has been demonstrated that the effects of varying the device parameters can easily be investigated using the model presented in this paper. This threshold voltage model provides a valuable reference to the TFET device design, simulation, and fabrication.

Key words: tunnel field-effect transistor, band-to-band tunneling, subthreshold swing, gated P-I-N diode

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))

李妤晨, 张鹤鸣, 张玉明, 胡辉勇, 王斌, 娄永乐, 周春宇. Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor[J]. 中国物理B, 2013, 22(3): 38501-038501.

Li Yu-Chen (李妤晨), Zhang He-Ming (张鹤鸣), Zhang Yu-Ming (张玉明), Hu Hui-Yong (胡辉勇), Wang Bin (王斌), Lou Yong-Le (娄永乐), Zhou Chun-Yu (周春宇). Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor[J]. Chin. Phys. B, 2013, 22(3): 38501-038501.

参考文献 19

[1]	Choi W Y, Park B G, Lee J D and Liu T J K 2007 IEEE Electron Device Lett. 28 743
[2]	Zhang Q, Zhao W and Alan S 2006 IEEE Electron Device Lett. 27 297
[3]	Dobrovolsky V, Rossokhaty V and Cristoloveanu S 2006 Solid-State Electronics 50 754
[4]	Appenzeller J, Lin Y M, Knoch J and Avouris P 2004 Phys. Rev. Lett. 93 196805
[5]	Bhuwalka K K, Schulze J and Eisele I 2005 IEEE Trans. Electron Devices 52 909
[6]	Boucart K and Ionescu A M 2007 IEEE Trans. Electron Devices 54 1725
[7]	Toh E H, Wang G H, Chan L, Samudra G and Yeo Y C 2007 Appl. Phys. Lett. 91 243505
[8]	Toh E H, Wang G H, Chan L, Sylvester D, Heng C H, Samudra G S and Yeo Y C 2008 Jpn. J. Appl. Phys. 47 2593
[9]	Saurabh S and Kumar M J 2011 IEEE Transactions on Electron Devices 58 404
[10]	Zhang Z F, Zhang H M, Hu H Y, Xuan R X and Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese)
[11]	Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X and Shu B 2010 Chin. Phys. B 19 117309
[12]	Li Y C, Zhang H M, Zhang Y M, Hu H Y, Xu X B, Qin S S and Wang G Y 2012 Acta Phys. Sin. 61 047303 (in Chinese)
[13]	Li L, Liu H X and Yang Z N 2012 Acta Phys. Sin. 61 166101 (in Chinese)
[14]	Boucart K and Ionescu A M 2008 Solid-State Electronics 52 1318
[15]	Ionescu A M and Riel H 2011 Nature 479 329
[16]	Shen C, Ong S L, Heng C H, Samudra G and Yeo Y C 2008 IEEE Electron Device Lett. 29 1252
[17]	Lin S and Kuo J 2003 IEEE Trans. Electron Devices 50 2559
[18]	Atlas User's Manual, Silvaco Int., Santa Clara, CA, May 26, 2006
[19]	R Booth, M White, H Wong and T Krutsick 1987 IEEE Transactions on Electron Devices 34 2501

Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor

Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor

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