中国物理B ›› 2013, Vol. 22 ›› Issue (10): 107104-107104.doi: 10.1088/1674-1056/22/10/107104

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor

秦洁宇a b, 杜刚b, 刘晓彦b   

  1. a Shenzhen Graduate School, Peking University, Shenzhen 518055, China;
    b Institute of Microelectronics, Peking University, Beijing 100871, China
  • 收稿日期:2013-03-04 修回日期:2013-04-11 出版日期:2013-08-30 发布日期:2013-08-30
  • 基金资助:
    Project supported by the National Key Basic Research Program, China (Grant Nos. 2011CBA00604 and 2009ZX02305-003).

The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor

Qin Jie-Yu (秦洁宇)a b, Du Gang (杜刚)b, Liu Xiao-Yan (刘晓彦)b   

  1. a Shenzhen Graduate School, Peking University, Shenzhen 518055, China;
    b Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2013-03-04 Revised:2013-04-11 Online:2013-08-30 Published:2013-08-30
  • Contact: Liu Xiao-Yan E-mail:xyliu@ime.pku.edu.cn
  • Supported by:
    Project supported by the National Key Basic Research Program, China (Grant Nos. 2011CBA00604 and 2009ZX02305-003).

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摘要： The effects of strain and surface roughness scattering on the quasi-ballistic hole transport in a strained gate-all-around germanium nanowire p-channel field-effect transistor (pFET) are investigated in this work. The valence subbands are shifted up and warped more parabolically by the influence of HfO2 due to the lattice mismatch. However, the boundary force only shifts the subbands downwards and has little effect on the reshaping of bands. Strain induced by HfO2 increases both the hole mobility and ON-current (ION), but has little effect on the hole mobility. The ION is degraded by the surface roughness scattering in both strained and unstrained devices.

关键词: nanowire, strain, surface roughness scattering, quasi-ballistic

Abstract: The effects of strain and surface roughness scattering on the quasi-ballistic hole transport in a strained gate-all-around germanium nanowire p-channel field-effect transistor (pFET) are investigated in this work. The valence subbands are shifted up and warped more parabolically by the influence of HfO2 due to the lattice mismatch. However, the boundary force only shifts the subbands downwards and has little effect on the reshaping of bands. Strain induced by HfO2 increases both the hole mobility and ON-current (ION), but has little effect on the hole mobility. The ION is degraded by the surface roughness scattering in both strained and unstrained devices.

Key words: nanowire, strain, surface roughness scattering, quasi-ballistic

中图分类号:  (Electron density of states and band structure of crystalline solids)

  • 71.20.-b
81.40.Jj (Elasticity and anelasticity, stress-strain relations) 03.65.Nk (Scattering theory) 73.23.Ad (Ballistic transport)