Effect of 6H-SiC (1120) substrate on epitaxial graphene revealed by Raman scattering

doi:10.1088/1674-1056/22/1/016301

中国物理B ›› 2013, Vol. 22 ›› Issue (1): 16301-016301.doi: 10.1088/1674-1056/22/1/016301

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Effect of 6H-SiC (1120) substrate on epitaxial graphene revealed by Raman scattering

林菁菁, 郭丽伟, 贾玉萍, 陈莲莲, 芦伟, 黄郊, 陈小龙

Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2012-07-05 修回日期:2012-09-06 出版日期:2012-12-01 发布日期:2012-12-01
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CB932700), the Knowledge Innovation Project of Chinese Academy of Science (Grant No. KJCX2-YW-W22), and the National Natural Science Foundation of China (Grant Nos. 51072223 and 50972162).

Effect of 6H-SiC (1120) substrate on epitaxial graphene revealed by Raman scattering

Lin Jing-Jing (林菁菁), Guo Li-Wei (郭丽伟), Jia Yu-Ping (贾玉萍), Chen Lian-Lian (陈莲莲), Lu Wei (芦伟), Huang Jiao (黄郊), Chen Xiao-Long (陈小龙)

Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2012-07-05 Revised:2012-09-06 Online:2012-12-01 Published:2012-12-01
Contact: Guo Li-Wei E-mail:lwguo@iphy.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CB932700), the Knowledge Innovation Project of Chinese Academy of Science (Grant No. KJCX2-YW-W22), and the National Natural Science Foundation of China (Grant Nos. 51072223 and 50972162).

摘要/Abstract

摘要： A nonpolar SiC(1120) substrate has been used to fabricate epitaxial graphene (EG). Two EGs with layer numbers of 8-10 (referred to as MLG) and 2-3 (referred to as FLG) were used as representative to study the substrate effect on EG through temperature dependent Raman scattering. It is found that Raman lineshifts of G and 2D peaks of the MLG with temperature are consistent with that of a free graphene predicted by theory calculation, indicating that the substrate influence on the MLG is undetectable. While Raman G peak lineshifts of the FLG to that of the free graphene are obvious, however, its lineshift rate (-0.016 cm^-1/K) is almost one third of that (-0.043 cm^-1/K) of a EG on 6H-SiC (0001) in the temperature range from 300 K to 400 K, indicating a weak substrate effect from SiC (1120) on the FLG. This renders the FLG a high mobility around 1812 cm²- ·V^-1-·s^-1 at room temperature even with a very high carrier concentration about 2.95× 10¹³ cm^-2 (p-type). These suggest SiC (1120) is more suitable for fabricating EG with high performance.

关键词: epitaxial grapheme, 20)')">6H-SiC (1120), temperature dependent Raman scattering

Abstract: A nonpolar SiC(110) substrate has been used to fabricate epitaxial graphene (EG). Two EGs with layer numbers of 8-10 (referred to as MLG) and 2-3 (referred to as FLG) were used as representative to study the substrate effect on EG through temperature dependent Raman scattering. It is found that Raman lineshifts of G and 2D peaks of the MLG with temperature are consistent with that of a free graphene predicted by theory calculation, indicating that the substrate influence on the MLG is undetectable. While Raman G peak lineshifts of the FLG to that of the free graphene are obvious, however, its lineshift rate (-0.016 cm^-1/K) is almost one third of that (-0.043 cm^-1/K) of a EG on 6H-SiC (0001) in the temperature range from 300 K to 400 K, indicating a weak substrate effect from SiC (110) on the FLG. This renders the FLG a high mobility around 1812 cm²- ·V^-1·s^-1 at room temperature even with a very high carrier concentration about 2.95× 10¹³ cm^-2 (p-type). These suggest SiC (110) is more suitable for fabricating EG with high performance.

Key words: epitaxial grapheme, 6H-SiC (1120), temperature dependent Raman scattering

中图分类号: (Phonons in graphene)

63.22.Rc

63.20.Ry (Anharmonic lattice modes)

林菁菁, 郭丽伟, 贾玉萍, 陈莲莲, 芦伟, 黄郊, 陈小龙. Effect of 6H-SiC (1120) substrate on epitaxial graphene revealed by Raman scattering[J]. 中国物理B, 2013, 22(1): 16301-016301.

Lin Jing-Jing (林菁菁), Guo Li-Wei (郭丽伟), Jia Yu-Ping (贾玉萍), Chen Lian-Lian (陈莲莲), Lu Wei (芦伟), Huang Jiao (黄郊), Chen Xiao-Long (陈小龙). Effect of 6H-SiC (1120) substrate on epitaxial graphene revealed by Raman scattering[J]. Chin. Phys. B, 2013, 22(1): 16301-016301.

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Effect of 6H-SiC (1120) substrate on epitaxial graphene revealed by Raman scattering

Effect of 6H-SiC (1120) substrate on epitaxial graphene revealed by Raman scattering

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