The influence of annealing temperature on the morphology of graphene islands

doi:10.1088/1674-1056/21/8/088102

中国物理B ›› 2012, Vol. 21 ›› Issue (8): 88102-088102.doi: 10.1088/1674-1056/21/8/088102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

The influence of annealing temperature on the morphology of graphene islands

黄立, 徐文焱, 阙炎德, 潘毅, 高敏, 潘理达, 郭海明, 王业亮, 杜世萱, 高鸿钧

Nanoscale Physics and Devices Laboratory, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2012-03-21 修回日期:2012-04-17 出版日期:2012-07-01 发布日期:2012-07-01
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2011CB932700, 2010CB923004, 2010CB923004, and 2009CB929103), the National Natural Science Foundation of China (Grant Nos. 10834011 and 60976089), and the Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences (Grant No. KJCX2-YW-W22).

The influence of annealing temperature on the morphology of graphene islands

Huang Li (黄立), Xu Wen-Yan (徐文焱), Que Yan-De (阙炎德), Pan Yi (潘毅), Gao Min (高敏), Pan Li-Da (潘理达), Guo Hai-Ming (郭海明), Wang Ye-Liang (王业亮), Du Shi-Xuan (杜世萱), Gao Hong-Jun (高鸿钧 )

Nanoscale Physics and Devices Laboratory, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2012-03-21 Revised:2012-04-17 Online:2012-07-01 Published:2012-07-01
Contact: Gao Hong-Jun E-mail:hjgao@aphy.iphy.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2011CB932700, 2010CB923004, 2010CB923004, and 2009CB929103), the National Natural Science Foundation of China (Grant Nos. 10834011 and 60976089), and the Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences (Grant No. KJCX2-YW-W22).

摘要/Abstract

摘要： We report on temperature-programmed growth of graphene islands on Ru (0001) at annealing temperatures of 700 ℃, 800 ℃, and 900 ℃. The sizes of the islands each show a nonlinear increase with the annealing temperature. In 700 ℃ and 800 ℃ annealings, the islands have nearly the same sizes and their ascending edges are embedded in the upper steps of the ruthenium substrate, which is in accordance with the etching growth mode. In 900 ℃ annealing, the islands are much larger and of lower quality, which represents the early stage of Smoluchowski ripening. A longer time annealing at 900 ℃ brings the islands to final equilibrium with an ordered moiré pattern. Our work provides new details about graphene early growth stages that could facilitate the better control of such a growth to obtain graphene with ideal size and high quality.

关键词: graphene islands, Ru (0001), annealing temperature, scanning tunneling microscope

Abstract: We report on temperature-programmed growth of graphene islands on Ru (0001) at annealing temperatures of 700 ℃, 800 ℃, and 900 ℃. The sizes of the islands each show a nonlinear increase with the annealing temperature. In 700 ℃ and 800 ℃ annealings, the islands have nearly the same sizes and their ascending edges are embedded in the upper steps of the ruthenium substrate, which is in accordance with the etching growth mode. In 900 ℃ annealing, the islands are much larger and of lower quality, which represents the early stage of Smoluchowski ripening. A longer time annealing at 900 ℃ brings the islands to final equilibrium with an ordered moiré pattern. Our work provides new details about graphene early growth stages that could facilitate the better control of such a growth to obtain graphene with ideal size and high quality.

Key words: graphene islands, Ru (0001), annealing temperature, scanning tunneling microscope

中图分类号: (Graphene)

81.05.ue

87.64.Dz (Scanning tunneling and atomic force microscopy) 81.10.Pq (Growth in vacuum)

黄立, 徐文焱, 阙炎德, 潘毅, 高敏, 潘理达, 郭海明, 王业亮, 杜世萱, 高鸿钧 . The influence of annealing temperature on the morphology of graphene islands[J]. 中国物理B, 2012, 21(8): 88102-088102.

Huang Li (黄立), Xu Wen-Yan (徐文焱), Que Yan-De (阙炎德), Pan Yi (潘毅), Gao Min (高敏), Pan Li-Da (潘理达), Guo Hai-Ming (郭海明), Wang Ye-Liang (王业亮), Du Shi-Xuan (杜世萱), Gao Hong-Jun (高鸿钧 ). The influence of annealing temperature on the morphology of graphene islands[J]. Chin. Phys. B, 2012, 21(8): 88102-088102.

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The influence of annealing temperature on the morphology of graphene islands

The influence of annealing temperature on the morphology of graphene islands

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