中国物理B ›› 2012, Vol. 21 ›› Issue (8): 87305-087305.doi: 10.1088/1674-1056/21/8/087305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Monolithic integration of AlGaN/GaN metal–insulator field-effect transistor with ultra-low voltage-drop diode for self-protection

汪志刚, 陈万军, 张竞, 张波, 李肇基   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2011-12-11 修回日期:2012-02-16 出版日期:2012-07-01 发布日期:2012-07-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60906037), the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2009J027), and the Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices.

Monolithic integration of AlGaN/GaN metal–insulator field-effect transistor with ultra-low voltage-drop diode for self-protection

Wang Zhi-Gang (汪志刚), Chen Wan-Jun (陈万军), Zhang Jing (张竞), Zhang Bo (张波), Li Zhao-Ji (李肇基 )   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2011-12-11 Revised:2012-02-16 Online:2012-07-01 Published:2012-07-01
  • Contact: Wang Zhi-Gang E-mail:Power GaN@126.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60906037), the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2009J027), and the Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices.

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摘要： In this paper, we present a monolithic integration of self-protected AlGaN/GaN metal-insulator field-effect transistor (MISFET). An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features self-protected function at reverse bias. This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage. In the smart monolithic integration, this integrated diode can block reverse bias (>70 V/μm) and suppress the leakage current (<5×10-11 A/mm). Compared with conventional monolithic integration, the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration. And the power loss is lower than 50% in conduction without forward current degeneration.

关键词: AlGaN/GaN, AlGaN/GaN heterostructures, metal-insulator field-effect transistor, field-controlled diode

Abstract: In this paper, we present a monolithic integration of self-protected AlGaN/GaN metal-insulator field-effect transistor (MISFET). An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features self-protected function at reverse bias. This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage. In the smart monolithic integration, this integrated diode can block reverse bias (>70 V/μm) and suppress the leakage current (<5×10-11 A/mm). Compared with conventional monolithic integration, the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration. And the power loss is lower than 50% in conduction without forward current degeneration.

Key words: AlGaN/GaN, AlGaN/GaN heterostructures, metal-insulator field-effect transistor, field-controlled diode

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.61.Ey (III-V semiconductors) 71.55.Eq (III-V semiconductors) 77.22.Ch (Permittivity (dielectric function))