Thermal analysis of GaN laser diodes in a package structure

doi:10.1088/1674-1056/21/8/084209

中国物理B ›› 2012, Vol. 21 ›› Issue (8): 84209-084209.doi: 10.1088/1674-1056/21/8/084209

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Thermal analysis of GaN laser diodes in a package structure

冯美鑫^{a b}, 张书明^b, 江徳生^a, 刘建平^b, 王辉^b, 曾畅^{a b}, 李增成^{a b}, 王怀兵^b, 王峰^b, 杨辉^{a b}

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

收稿日期:2011-12-15 修回日期:2012-02-21 出版日期:2012-07-01 发布日期:2012-07-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001, 60976045, 60836003, 60776047, and 61076119), the National Basic Research Program of China (Grant No. 2007CB936700), and the Funds for Outstanding Yong Researchers from the National Natural Science Foundation of China (Grant No. 60925017).

Thermal analysis of GaN laser diodes in a package structure

Feng Mei-Xin (冯美鑫)^{a b}, Zhang Shu-Ming (张书明)^b, Jiang De-Sheng (江徳生)^a, Liu Jian-Ping (刘建平)^b, Wang Hui (王辉)^b, Zeng Chang (曾畅)^{a b}, Li Zeng-Cheng (李增成)^{a b}, Wang Huai-Bing (王怀兵)^b, Wang Feng (王峰)^b, Yang Hui (杨辉)^{a b}

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received:2011-12-15 Revised:2012-02-21 Online:2012-07-01 Published:2012-07-01
Contact: Feng Mei-Xin E-mail:fengmeixin@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001, 60976045, 60836003, 60776047, and 61076119), the National Basic Research Program of China (Grant No. 2007CB936700), and the Funds for Outstanding Yong Researchers from the National Natural Science Foundation of China (Grant No. 60925017).

摘要/Abstract

摘要： Using the finite-element method, the thermal resistances of GaN laser diode devices in TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.

关键词: laser diodes, thermal, GaN

Abstract: Using the finite-element method, the thermal resistances of GaN laser diode devices in TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.

Key words: laser diodes, thermal, GaN

中图分类号: (Semiconductor lasers; laser diodes)

42.55.Px

61.72.uj (III-V and II-VI semiconductors) 68.60.Dv (Thermal stability; thermal effects)

冯美鑫, 张书明, 江徳生, 刘建平, 王辉, 曾畅, 李增成, 王怀兵, 王峰, 杨辉. Thermal analysis of GaN laser diodes in a package structure[J]. 中国物理B, 2012, 21(8): 84209-084209.

Feng Mei-Xin (冯美鑫), Zhang Shu-Ming (张书明), Jiang De-Sheng (江徳生), Liu Jian-Ping (刘建平), Wang Hui (王辉), Zeng Chang (曾畅), Li Zeng-Cheng (李增成), Wang Huai-Bing (王怀兵), Wang Feng (王峰), Yang Hui (杨辉). Thermal analysis of GaN laser diodes in a package structure[J]. Chin. Phys. B, 2012, 21(8): 84209-084209.

参考文献 15

[1]	Hwang W J, Lee T H, Nam O H, Kim H K, Kwak J S, Park Y J and Shin M W 2006 Phys. Status Solidi C 3 2174
[2]	Ji L, Jiang D S, Zhang S M, Liu Z S, Zeng C, Zhao D G, Zhu J J, Wang H, Duan L H and Yang H 2010 Chin. Phys. B 19 124211
[3]	Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Sugimoto Y and Kiyoku H 1996 Appl. Phys. Lett. 69 3034
[4]	Hatakoshi G, Onomura M, Yamamoto M, Nunoue S, Itaya K and Ishikawa M 1999 Jpn. J. Appl. Phys. 38 2764
[5]	Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Sugimoto Y and Kiyoku H 1996 Appl. Phys. Lett. 69 4056
[6]	Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Sugimoto Y and Kiyoku H 1997 Appl. Phys. Lett. 70 868
[7]	Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Sugimoto Y and Kiyoku H 1997 Appl. Phys. Lett. 70 1417
[8]	Kim J M, Kim S, Kang S B, Kim Y J, Jeong H, Lee K, Kim J, Lee S, Suh D, Yi J H, Choi Y, Jung S G and Noh M 2010 Phys. Status Solidi C 7 1801
[9]	Takahashi K, Matsuoka D, Harima H, Kisoda K, Tsuda Y, Yuasa T and Taneya M 2007 Phys. Status Solidi C 4 2802
[10]	Ryu H, Ha K, Chae J, Nam O and Park Y 2005 Appl. Phys. Lett. 87 093506
[11]	Lee M, Boucke K, Gotz M, Meyer A, Kelemen M, Lehman N and Sopra F 2008 Proc. SPIE 6876 687609
[12]	Yang L, Jang S, Hwang W and Shin M 2007 Thermochimica Acta 455 95
[13]	Shan Q, Dai Q, Chhajed S, Cho J and Schubert E F 2010 J. Appl. Phys. 108 084504
[14]	Zhu C, Zhang Y G, Li A Z and Tian Z B 2006 J. Appl. Phys. 100 053105
[15]	Zhu C, Zhang Y G, Li A Z and Zheng Y L 2005 Semicond. Sci. Technol. 20 563

Thermal analysis of GaN laser diodes in a package structure

Thermal analysis of GaN laser diodes in a package structure

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