中国物理B ›› 2012, Vol. 21 ›› Issue (7): 78501-078501.doi: 10.1088/1674-1056/21/7/078501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

The influence of thermally assisted tunneling on the performance of charge trapping memory

彭雅华, 刘晓彦, 杜刚, 刘飞, 金锐, 康晋锋   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • 收稿日期:2012-02-14 修回日期:2012-02-22 出版日期:2012-06-01 发布日期:2012-06-01
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2010CB934203).

The influence of thermally assisted tunneling on the performance of charge trapping memory

Peng Ya-Hua(彭雅华), Liu Xiao-Yan(刘晓彦)†, Du Gang(杜刚), Liu Fei(刘飞), Jin Rui(金锐), and Kang Jin-Feng(康晋锋)   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2012-02-14 Revised:2012-02-22 Online:2012-06-01 Published:2012-06-01
  • Contact: Liu Xiao-Yan E-mail:xyliu@ime.pku.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2010CB934203).

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摘要： We evaluate the influence of thermally assisted tunneling (ThAT) mechanism on charge trapping memory (CTM) cell performance by numerical simulation, and comprehensively analyse the effects of temperature, trap depth, distribution of trapped charge, gate voltage and parameters of ThAT on erasing/programming speed and retention performance. The ThAT is an indispensable mechanism in CTM. This mechanism can increase the detrapping probability of trapped charge. Our results reveal that the ThAT effect causes the sensitivity of the cell performance to temperature and it could affect the operational speed, especially for the erasing operation. The retention performance degrades compared with the results when the ThAT mechanism is ignored.

关键词: thermally assisted tunneling, charge trapping memory, erasing/programming/ retention performance

Abstract: We evaluate the influence of thermally assisted tunneling (ThAT) mechanism on charge trapping memory (CTM) cell performance by numerical simulation, and comprehensively analyse the effects of temperature, trap depth, distribution of trapped charge, gate voltage and parameters of ThAT on erasing/programming speed and retention performance. The ThAT is an indispensable mechanism in CTM. This mechanism can increase the detrapping probability of trapped charge. Our results reveal that the ThAT effect causes the sensitivity of the cell performance to temperature and it could affect the operational speed, especially for the erasing operation. The retention performance degrades compared with the results when the ThAT mechanism is ignored.

Key words: thermally assisted tunneling, charge trapping memory, erasing/programming/ retention performance

中图分类号:  (Semiconductor devices)

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