中国物理B ›› 2012, Vol. 21 ›› Issue (7): 76104-076104.doi: 10.1088/1674-1056/21/7/076104

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

A nano-metallic-particles-based CMOS image sensor for DNA detection

何进a, 苏艳梅b, 马玉涛b, 陈沁b, 王若楠b, 叶韵b, 马勇b, 梁海浪b   

  1. a Micro & Nano Electronic Device and Integrated Technology Center, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China;
    b Peking University Shenzhen SOC Key Laboratory, PKU-HKUST Shenzhen-Honggang Institution, W303, West Tower, IER Bldg., Hi-Tech Industrial Park South, Shenzhen 518057, China
  • 收稿日期:2011-08-25 修回日期:2012-01-18 出版日期:2012-06-01 发布日期:2012-06-01
  • 基金资助:
    Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61036004), the Shenzhen Science & Technology Foundation, China (Grant No. CXB201005250031A), the Fundamental Research Project of Shenzhen Science & Technology Foundation, China (Grant No. JC201005280670A), and the International Collaboration Project of Shenzhen Science & Technology Foundation, China (Grant No. ZYA2010006030006A).

A nano-metallic-particles-based CMOS image sensor for DNA detection

He Jin(何进)a), Su Yan-Mei(苏艳梅)b), Ma Yu-Tao (马玉涛)b), Chen Qin(陈沁)b), Wang Ruo-Nan(王若楠) b), Ye Yun(叶韵)b), Ma Yong(马勇) b), and Liang Hai-Lang(梁海浪)b)   

  1. a Micro & Nano Electronic Device and Integrated Technology Center, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China;
    b Peking University Shenzhen SOC Key Laboratory, PKU-HKUST Shenzhen-Honggang Institution, W303, West Tower, IER Bldg., Hi-Tech Industrial Park South, Shenzhen 518057, China
  • Received:2011-08-25 Revised:2012-01-18 Online:2012-06-01 Published:2012-06-01
  • Contact: He Jin E-mail:frankhe@pku.edu.cn
  • Supported by:
    Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61036004), the Shenzhen Science & Technology Foundation, China (Grant No. CXB201005250031A), the Fundamental Research Project of Shenzhen Science & Technology Foundation, China (Grant No. JC201005280670A), and the International Collaboration Project of Shenzhen Science & Technology Foundation, China (Grant No. ZYA2010006030006A).

摘要: In this paper we report on a study of the CMOS image sensor detection of the DNA based on the self-assembled nano-metallic particles, which are selectively deposited on the surface of passive image sensor. The nano-metallic particles block the optical radiation in the visible spectrum of ordinary light source effectively. When such a technical method is applied to the DNA detection, the requirement for special UV light source in the most popular fluorescence is eliminated. The DNA detection methodology is tested on a CMOS sensor chip fabricated using a standard 0.5 μm CMOS process. It is demonstrated that the approach is highly selective to detecting even signal-base mismatched DNA target with extremely-low-concentration DNA sample down to 10 pM under ordinary light source.

关键词: CMOS image sensor, nano-metallic particles, DNA detection, 0.5 μm CMOS process

Abstract: In this paper we report on a study of the CMOS image sensor detection of the DNA based on the self-assembled nano-metallic particles, which are selectively deposited on the surface of passive image sensor. The nano-metallic particles block the optical radiation in the visible spectrum of ordinary light source effectively. When such a technical method is applied to the DNA detection, the requirement for special UV light source in the most popular fluorescence is eliminated. The DNA detection methodology is tested on a CMOS sensor chip fabricated using a standard 0.5 μm CMOS process. It is demonstrated that the approach is highly selective to detecting even signal-base mismatched DNA target with extremely-low-concentration DNA sample down to 10 pM under ordinary light source.

Key words: CMOS image sensor, nano-metallic particles, DNA detection, 0.5 μm CMOS process

中图分类号:  (Semiconductors)

  • 61.82.Fk
64.70.kg (Semiconductors) 68.35.bg (Semiconductors)