Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

doi:10.1088/1674-1056/21/2/027304

中国物理B ›› 2012, Vol. 21 ›› Issue (2): 27304-027304.doi: 10.1088/1674-1056/21/2/027304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

姜向伟,李树深

收稿日期:2011-09-08 修回日期:2011-11-10 出版日期:2012-01-30 发布日期:2012-01-30
通讯作者: 姜向伟,xwjiang@semi.ac.cn E-mail:xwjiang@semi.ac.cn

Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

Jiang Xiang-Wei(姜向伟)^† and Li Shu-Shen(李树深)

State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China

Received:2011-09-08 Revised:2011-11-10 Online:2012-01-30 Published:2012-01-30
Contact: Jiang Xiang-Wei,xwjiang@semi.ac.cn E-mail:xwjiang@semi.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. G2009CB929300) and the National Natural Science Foundation of China (Grant Nos. 60821061 and 60776061).

摘要/Abstract

Abstract: By using the linear combination of bulk band (LCBB) method incorporated with the top of the barrier splitting (TBS) model, we present a comprehensive study on the quantum confinement effects and the source-to-drain tunneling in the ultra-scaled double-gate (DG) metal-oxide-semiconductor field-effect transistors (MOSFETs). A critical body thickness value of 5 nm is found, below which severe valley splittings among different X valleys for the occupied charge density and the current contributions occur in ultra-thin silicon body structures. It is also found that the tunneling current could be nearly 100% with an ultra-scaled channel length. Different from the previous simulation results, it is found that the source-to-drain tunneling could be effectively suppressed in the ultra-thin body thickness (2.0 nm and below) by the quantum confinement and the tunneling could be suppressed down to below 5% when the channel length approaches 16 nm regardless of the body thickness.

Key words: quantum confinement, tunneling, metal-oxide-semiconductor field-effect transistors, linear combination of bulk band

中图分类号: (Ballistic transport)

73.23.Ad

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

姜向伟,李树深. [J]. 中国物理B, 2012, 21(2): 27304-027304.

Jiang Xiang-Wei(姜向伟) and Li Shu-Shen(李树深) . Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs[J]. Chin. Phys. B, 2012, 21(2): 27304-027304.

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Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

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