Investigation of inhomogeneous barrier height of Au/Bi4Ti3O12/n-Si structure through Gaussian distribution of barrier height

doi:10.1088/1674-1056/21/12/128502

Chin. Phys. B ›› 2012, Vol. 21 ›› Issue (12): 128502-128502.doi: 10.1088/1674-1056/21/12/128502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Investigation of inhomogeneous barrier height of Au/Bi₄Ti₃O₁₂/n-Si structure through Gaussian distribution of barrier height

M. Gökcen, M. Yildirim

Department of Physics, Faculty of Arts and Sciences, Düzce University, Düzce, Turkey

收稿日期:2012-06-19 修回日期:2012-07-24 出版日期:2012-11-01 发布日期:2012-11-01
基金资助:
Project supported by the Düzce University Scientific Research Project (Grant Nos. 2010.05.02.056 and 2012.05.02.110).

Investigation of inhomogeneous barrier height of Au/Bi₄Ti₃O₁₂/n-Si structure through Gaussian distribution of barrier height

M. Gökcen, M. Yildirim

Department of Physics, Faculty of Arts and Sciences, Düzce University, Düzce, Turkey

Received:2012-06-19 Revised:2012-07-24 Online:2012-11-01 Published:2012-11-01
Contact: M. Gökcen E-mail:muharremgokcen@duzce.edu.tr
Supported by:
Project supported by the Düzce University Scientific Research Project (Grant Nos. 2010.05.02.056 and 2012.05.02.110).

摘要/Abstract

摘要： Au/Bi₄Ti₃O₁₂/n-Si structure is fabricated in order to investigate its current-voltage (I-V) characteristics in a temperature range of 300 K-400 K. Obtained I-V data are evaluated by thermionic emission (TE) theory. Zero-bias barrier height (Φ_B0) and ideality factor (n) calculated from I-V characteristics, are found to be temperature-dependent such that Φ_B0 increases with temperature increasing, whereas n decreases. Obtained temperature dependence of Φ_B0 and linearity in Φ_B0 versus n plot, together with lower barrier height and Richardson constant values obtained from Richardson plot, indicate that the barrier height of the structure is inhomogeneous in nature. Therefore, I-V characteristics are explained on the basis of Gaussian distribution of barrier height.

关键词: Bi₄Ti₃O₁₂, I-V characterization, temperature dependence, Gaussian distribution

Abstract: Au/Bi₄Ti₃O₁₂/n-Si structure is fabricated in order to investigate its current-voltage (I-V) characteristics in a temperature range of 300 K-400 K. Obtained I-V data are evaluated by thermionic emission (TE) theory. Zero-bias barrier height (Φ_B0) and ideality factor (n) calculated from I-V characteristics, are found to be temperature-dependent such that Φ_B0 increases with temperature increasing, whereas n decreases. Obtained temperature dependence of Φ_B0 and linearity in Φ_B0 versus n plot, together with lower barrier height and Richardson constant values obtained from Richardson plot, indicate that the barrier height of the structure is inhomogeneous in nature. Therefore, I-V characteristics are explained on the basis of Gaussian distribution of barrier height.

Key words: Bi₄Ti₃O₁₂, I-V characterization, temperature dependence, Gaussian distribution

中图分类号: (Surface barrier, boundary, and point contact devices)

85.30.Hi

85.30.Kk (Junction diodes) 84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)) 73.40.-c (Electronic transport in interface structures)

M. Gökcen, M. Yildirim. Investigation of inhomogeneous barrier height of Au/Bi₄Ti₃O₁₂/n-Si structure through Gaussian distribution of barrier height[J]. Chin. Phys. B, 2012, 21(12): 128502-128502.

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Investigation of inhomogeneous barrier height of Au/Bi₄Ti₃O₁₂/n-Si structure through Gaussian distribution of barrier height

Investigation of inhomogeneous barrier height of Au/Bi₄Ti₃O₁₂/n-Si structure through Gaussian distribution of barrier height

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