Identification and elimination of inductively coupled  plasma-induced defects in AlxGa1 - xN/GaN  heterostructures

doi:10.1088/1674-1056/20/7/077303

中国物理B ›› 2011, Vol. 20 ›› Issue (7): 77303-077303.doi: 10.1088/1674-1056/20/7/077303

Identification and elimination of inductively coupled plasma-induced defects in Al_xGa_{1 - x}N/GaN heterostructures

刘新宇¹, 魏珂¹, 黄俊¹, 林芳², 沈波², 卢励吾², 许福军², 王彦², 马楠²

(1)Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (2)State Key Laboratory of Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China%}

收稿日期:2010-11-30 修回日期:2011-03-25 出版日期:2011-07-15 发布日期:2011-07-15

Identification and elimination of inductively coupled plasma-induced defects in Al_xGa_{1 - x}N/GaN heterostructures

Lin Fang(林芳)^a), Shen Bo(沈波)^a)†, Lu Li-Wu(卢励吾)^a), Liu Xin-Yu(刘新宇)^b), Wei Ke(魏珂)^b), Xu Fu-Jun(许福军)^a), Wang Yan(王彦)^a), Ma Nan(马楠)^a), and Huang Jun(黄俊)^b)

^a State Key Laboratory of Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China; ^b Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2010-11-30 Revised:2011-03-25 Online:2011-07-15 Published:2011-07-15

摘要/Abstract

摘要： By using temperature-dependent Hall, variable-frequency capacitance—voltage and cathodoluminescence (CL) measurements, the identification of inductively coupled plasma (ICP)-induced defect states around the Al_xGa_{1 - x}N/GaN heterointerface and their elimination by subsequent annealing in Al_xGa_{1 - x}N/GaN heterostructures are systematically investigated. The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed. The interface state density after the ICP-etching process is as high as 2.75 × 10¹² cm^{- 2}·eV^{- 1}. The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N₂ ambient. The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.

关键词: inductively coupled plasma, subsequent annealing, defect state

Abstract: By using temperature-dependent Hall, variable-frequency capacitance—voltage and cathodoluminescence (CL) measurements, the identification of inductively coupled plasma (ICP)-induced defect states around the Al_xGa_{1 - x}N/GaN heterointerface and their elimination by subsequent annealing in Al_xGa_{1 - x}N/GaN heterostructures are systematically investigated. The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed. The interface state density after the ICP-etching process is as high as 2.75 × 10¹² cm^{- 2}·eV^{- 1}. The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N₂ ambient. The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.

Key words: inductively coupled plasma, subsequent annealing, defect state

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

73.20.Hb (Impurity and defect levels; energy states of adsorbed species) 73.20.At (Surface states, band structure, electron density of states) 73.50.Dn (Low-field transport and mobility; piezoresistance)

林芳, 沈波, 卢励吾, 刘新宇, 魏珂, 许福军, 王彦, 马楠, 黄俊. Identification and elimination of inductively coupled plasma-induced defects in Al_xGa_{1 - x}N/GaN heterostructures[J]. 中国物理B, 2011, 20(7): 77303-077303.

Lin Fang(林芳), Shen Bo(沈波), Lu Li-Wu(卢励吾), Liu Xin-Yu(刘新宇), Wei Ke(魏珂), Xu Fu-Jun(许福军), Wang Yan(王彦), Ma Nan(马楠), and Huang Jun(黄俊). Identification and elimination of inductively coupled plasma-induced defects in Al_xGa_{1 - x}N/GaN heterostructures[J]. Chin. Phys. B, 2011, 20(7): 77303-077303.

参考文献 29

[1]	Adesida I, Youtsey C, Ping A T, Khan F, Romano L T and Bulmann G 1999 MRS Internet J. Nitride Semicond. Res. 4S1 G1.4
[2]	Chen C H, Keller S, Haberer E D, Zhang L, Denbaars S P, Hy E L and Wu Y 1999 J. Vac. Sci. Technol. B 17 2755
[3]	Ping A T, Chen Q, Yang J W, Khan M A and Adesida I 1998 J. Electron. Mater. 27 261
[4]	Pearton S, Abermathy C R, Ren F, Lothian J R, Wisk P W and Katz A 1993 J. Vac. Sci. Technol. A 11 1772
[5]	Eddy Jr C R and Molnar B 1999 J. Electron. Mater. 28 314
[6]	Mouffak Z, Bensaoula A and Trombetta L 2004 J. Appl. Phys. 95 727
[7]	Wang X, Yu G, Lei B, Wang X, Lin C, Sui Y, Meng S, Qi M and Li A 2007 J. Electron. Mater. 36 697
[8]	Vertiatchikh A V, Eastman L F, Schaff W J and Prunty T 2002 Electron. Lett. 38 388
[9]	Hashizume T, Ootomo S, Inagaki T and Hasegawa H 2003 J. Vac. Sci. Technol. B 21 1828
[10]	Shah P B, Smith D D, Griffin T E, Jones K A and Sheppard S T 2000 IEEE Trans. Electron Devices 47 308
[11]	Maeda N, Tsubaki K, Saitoh T and Kobayashi N 2001 Appl. Phys. Lett. 79 1634
[12]	Wang M J, Shen B, Xu F J, Wang Y, Xu J, Huang S, Yang Z J, Xu K and Zhang G Y 2007 Appl. Phys. A 88 715
[13]	Smorchkova I P, Elsass C R, Ibbetson J P, Vetury R, Heying B, Fini P, Haus E, DenBaars S P, Speck J S and Mishra U K 1999 J. Appl. Phys. 86 4520
[14]	Cai Y, Zhou Y G, Chen K J and Lau K M 2005 IEEE Electron Device Lett. 26 435
[15]	Wang R X, Xu S J, Shi S L, Beling C D, Fung S, Zhao D G, Yang H and Tao X M 2006 Appl. Phys. Lett. 89 143505
[16]	Miller E J, Dang X Z, Wieder H H, Asbeck P M, Yu E T, Sullivan G J and Redwing J M 2000 J. Appl. Phys. 87 8070
[17]	özdemir A F, Türüt A and Kökcce A 2003 Thin Solid Films 425 210
[18]	Lehovec K 1966 Appl. Phys. Lett. 8 48
[19]	Nakamura W, Tokuda Y, Ueda H and Kachi T 2006 Physica B 376—377 516
[20]	Soh C B, Chua S J, Lim H F, Chi D Z, Tripathy S and Liu W 2004 J. Appl. Phys. 96 1341
[21]	Buttari D, Chini A, Palacios T, Coffie R, Shen L, Xing H, Heikman S, McCarthy L, Chakraborty A, Keller S and Mishra U K 2003 Appl. Phys. Lett. 83 4779
[22]	Hacke P, Detchprohm T, Hiramatsu K, Sawaki N, Tadatomo K and Miyake K 1994 J. Appl. Phys. 76 304
[23]	Fang Z Q, Look D C, Jasinski J, Benamara M, Liliental-Weber Z and Molnar R J 2001 Appl. Phys. Lett. 78 332
[24]	Fang Z Q, Look D C, Wang X L, Han J, Khan F A and Adesida I 2003 Appl. Phys. Lett. 82 1562
[25]	Fang Z Q, Hemsky J W, Look D C and Mack M P 1998 Appl. Phys. Lett. 72 448
[26]	Auret F D, Goodman S A, Koschnick F K, Spaeth J M, Beaumont B and Gibart P 1998 Appl. Phys. Lett. 73 3745
[27]	Cho H K, Kim K S, Hong C H and Lee H J 2001 J. Cryst. Growth 223 38
[28]	Wang C D, Yu L S, Lau S S, Yu E T, Kim W, Botchkarev A E and Morkocc H 1998 Appl. Phys. Lett. 72 1211
[29]	Fang Z Q, Look D C, Kim W, Fan Z, Botchkarev A and Morkocc H 1998 Appl. Phys. Lett. 72 2277

Identification and elimination of inductively coupled plasma-induced defects in Al_xGa_{1 - x}N/GaN heterostructures

Identification and elimination of inductively coupled plasma-induced defects in Al_xGa_{1 - x}N/GaN heterostructures

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