中国物理B ›› 2010, Vol. 19 ›› Issue (12): 127801-127801.doi: 10.1088/1674-1056/19/12/127801

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Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs

胡卫国1, 三宅秀人1, 平松和政1, 黎大兵2, 宋航2   

  1. (1)Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan; (2)Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • 收稿日期:2010-01-27 修回日期:2010-02-19 出版日期:2010-12-15 发布日期:2010-12-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60976011), the Knowledge Innovation Program of CIOMP (Grant No. 08CY32M080), the Akasaki Research Center at Nagoya University, Japan, the Grants-in-Aid for Scientific Research of the Ministry of Education, Culture, Sports, Science and Technology of Japan (Grant Nos. 18360008 and 18560010), and the Scientific Research on Priority Areas of the Ministry of Education, Culture, Sports, Science and Technology of Japan (Grant No. 18069006).

Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs

Li Da-Bing(黎大兵)a)b)†, Hu Wei-Guo(胡卫国) b), Miyake Hideto(三宅秀人)b), Hiramatsu Kazumasa(平松和政)b), and Song Hang(宋航) a)   

  1. a Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; b Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan
  • Received:2010-01-27 Revised:2010-02-19 Online:2010-12-15 Published:2010-12-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60976011), the Knowledge Innovation Program of CIOMP (Grant No. 08CY32M080), the Akasaki Research Center at Nagoya University, Japan, the Grants-in-Aid for Scientific Research of the Ministry of Education, Culture, Sports, Science and Technology of Japan (Grant Nos. 18360008 and 18560010), and the Scientific Research on Priority Areas of the Ministry of Education, Culture, Sports, Science and Technology of Japan (Grant No. 18069006).

摘要: Undoped and Si-doped AlGaN/AlN multiple quantum wells (MQWs) were grown on AlN/Sapphire templates by metalorganic phase vapor epitaxy. High-resolution x-ray diffraction measurements showed the high interface quality of the MQWs little affected by Si-doping. Room-temperature (RT) cathodoluminescence measurements demonstrated a significant enhancement of the RT deep ultraviolet emission at about 240 nm from the AlGaN/AlN MQWs by Si doping. The mechanism of the improved emission efficiency was that the Si-doping partially screens the internal electric field and thus leads to the increase of the overlap between electron and hole wavefunctions. Further theoretical simulation also supports the above results.

Abstract: Undoped and Si-doped AlGaN/AlN multiple quantum wells (MQWs) were grown on AlN/Sapphire templates by metalorganic phase vapor epitaxy. High-resolution x-ray diffraction measurements showed the high interface quality of the MQWs little affected by Si-doping. Room-temperature (RT) cathodoluminescence measurements demonstrated a significant enhancement of the RT deep ultraviolet emission at about 240 nm from the AlGaN/AlN MQWs by Si doping. The mechanism of the improved emission efficiency was that the Si-doping partially screens the internal electric field and thus leads to the increase of the overlap between electron and hole wavefunctions. Further theoretical simulation also supports the above results.

Key words: nitride, quantum wells, optical properties, luminescence

中图分类号:  (Defects and impurities: doping, implantation, distribution, concentration, etc.)

  • 68.55.Ln
78.40.Fy (Semiconductors) 78.60.Hk (Cathodoluminescence, ionoluminescence) 78.67.De (Quantum wells) 81.15.Kk (Vapor phase epitaxy; growth from vapor phase)