中国物理B ›› 2010, Vol. 19 ›› Issue (10): 106803-106803.doi: 10.1088/1674-1056/19/10/106803

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Deposition pressure effect on the surface roughness scaling of microcrystalline silicon films

朱志立, 丁艳丽, 王志永, 谷锦华, 卢景霄   

  1. School of Physical Engineering and Material Physics Laboratory, Zhengzhou University, Zhengzhou 450052, China
  • 收稿日期:2009-09-27 修回日期:2010-04-19 出版日期:2010-10-15 发布日期:2010-10-15
  • 基金资助:
    Project supported by the National Key Basic Research Program of China (Grant No. 2006CB202601) and the Natural Science Foundation of Henan Province of China (Grant No. 82300443203).

Deposition pressure effect on the surface roughness scaling of microcrystalline silicon films

Zhu Zhi-Li(朱志立), Ding Yan-Li(丁艳丽), Wang Zhi-Yong(王志永), Gu Jin-Hua(谷锦华)†, and Lu Jing-Xiao(卢景霄)   

  1. School of Physical Engineering and Material Physics Laboratory, Zhengzhou University, Zhengzhou 450052, China
  • Received:2009-09-27 Revised:2010-04-19 Online:2010-10-15 Published:2010-10-15
  • Supported by:
    Project supported by the National Key Basic Research Program of China (Grant No. 2006CB202601) and the Natural Science Foundation of Henan Province of China (Grant No. 82300443203).

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摘要： The scaling behaviour of surface roughness evolution of microcrystalline silicon (μc-Si:H) films prepared by very-high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) has been investigated by using a spectroscopic ellipsometry (SE) technique. The growth exponent β was analysed for the films deposited under different pressures Pg. The results suggest that films deposited at Pg = 70 Pa have a growth exponent β about 0.22, which corresponds to the definite diffusion growth. However, abnormal scaling behaviour occurs in the films deposited at Pg = 300 Pa. The exponent β is about 0.81 that is much larger than 0.5 of zero diffusion limit in the scaling theory. The growth mode of μ c-Si:H deposited at Pg= 300 Pa is clearly different from that of μc-Si:H at Pg = 70 Pa. Monte Carlo simulations indicate that the sticking process and the surface diffusion of the radicals are two key factors to affect the growth mode under different pressures. Under Pg= 300 Pa, β>0.5 is correlated with the strong shadowing effect resulting from the larger sticking coefficient.

Abstract: The scaling behaviour of surface roughness evolution of microcrystalline silicon (μc-Si:H) films prepared by very-high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) has been investigated by using a spectroscopic ellipsometry (SE) technique. The growth exponent β was analysed for the films deposited under different pressures Pg. The results suggest that films deposited at Pg = 70 Pa have a growth exponent β about 0.22, which corresponds to the definite diffusion growth. However, abnormal scaling behaviour occurs in the films deposited at Pg = 300 Pa. The exponent β is about 0.81 that is much larger than 0.5 of zero diffusion limit in the scaling theory. The growth mode of μ c-Si:H deposited at Pg= 300 Pa is clearly different from that of μc-Si:H at Pg = 70 Pa. Monte Carlo simulations indicate that the sticking process and the surface diffusion of the radicals are two key factors to affect the growth mode under different pressures. Under Pg= 300 Pa, β>0.5 is correlated with the strong shadowing effect resulting from the larger sticking coefficient.

Key words: microcrystalline Si thin film, spectroscopic ellipsometry, the growth exponent, Monte Carlo simulations

中图分类号:  (Plasma-based ion implantation and deposition)

  • 52.77.Dq
68.35.B- (Structure of clean surfaces (and surface reconstruction)) 68.35.Fx (Diffusion; interface formation) 68.55.-a (Thin film structure and morphology) 78.30.Am (Elemental semiconductors and insulators) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))