中国物理B ›› 2009, Vol. 18 ›› Issue (11): 4966-4969.doi: 10.1088/1674-1056/18/11/058

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SiC based Si/SiC heterojunction and its rectifying characteristics

朱峰, 陈治明, 李连碧, 赵顺峰, 林涛   

  1. Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
  • 收稿日期:2008-12-25 修回日期:2009-03-05 出版日期:2009-11-20 发布日期:2009-11-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60576044).

SiC based Si/SiC heterojunction and its rectifying characteristics

Zhu Feng(朱峰), Chen Zhi-Ming(陈治明)†, Li Lian-Bi(李连碧), Zhao Shun-Feng(赵顺峰), and Lin Tao(林涛)   

  1. Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
  • Received:2008-12-25 Revised:2009-03-05 Online:2009-11-20 Published:2009-11-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60576044).

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摘要： The Si on SiC heterojunction is still poorly understood, although it has a number of potential applications in electronic and optoelectronic devices, for example, light-activated SiC power switches where Si may play the role of an light absorbing layer. This paper reports on Si films heteroepitaxially grown on the Si face of (0001) n-type 6H-SiC substrates and the use of B2H_6 as a dopant for p-Si grown at temperatures in a range of 700--950~\du. X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) tests have demonstrated that the samples prepared at the temperatures ranged from 850~℃ to 900~℃ are characterized as monocrystalline silicon. The rocking XRD curves show a well symmetry with FWHM of 0.4339° Omega. Twin crystals and stacking faults observed in the epitaxial layers might be responsible for widening of the rocking curves. Dependence of the crystal structure and surface topography on growth temperature is discussed based on the experimental results. The energy band structure and rectifying characteristics of the Si/SiC heterojunctions are also preliminarily tested.

Abstract: The Si on SiC heterojunction is still poorly understood, although it has a number of potential applications in electronic and optoelectronic devices, for example, light-activated SiC power switches where Si may play the role of an light absorbing layer. This paper reports on Si films heteroepitaxially grown on the Si face of (0001) n-type 6H-SiC substrates and the use of B2H6 as a dopant for p-Si grown at temperatures in a range of 700--950 ℃. X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) tests have demonstrated that the samples prepared at the temperatures ranged from 850 ℃ to 900 ℃ are characterized as monocrystalline silicon. The rocking XRD curves show a well symmetry with FWHM of 0.4339° Omega. Twin crystals and stacking faults observed in the epitaxial layers might be responsible for widening of the rocking curves. Dependence of the crystal structure and surface topography on growth temperature is discussed based on the experimental results. The energy band structure and rectifying characteristics of the Si/SiC heterojunctions are also preliminarily tested.

Key words: Si/6H-SiC, heterojunction, heteroepitaxy SiC

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
73.40.Ei (Rectification) 68.55.A- (Nucleation and growth) 61.72.Mm (Grain and twin boundaries) 61.72.Nn (Stacking faults and other planar or extended defects) 68.35.B- (Structure of clean surfaces (and surface reconstruction))