Investigation of the magnetoresistance in EuS/Nb:SrTiO3 junction

doi:10.1088/1674-1056/abbbf2

中国物理B ›› 2020, Vol. 29 ›› Issue (11): 117503-.doi: 10.1088/1674-1056/abbbf2

Jia Lu(芦佳)¹, Yu-Lin Gan(甘渝林)¹, Yun-Lin Lei(雷蕴麟)², Lei Yan(颜雷)¹^,†(), Hong Ding(丁洪)¹^,³^,⁴

收稿日期:2020-07-21 修回日期:2020-09-10 接受日期:2020-09-28 出版日期:2020-11-05 发布日期:2020-11-03

Investigation of the magnetoresistance in EuS/Nb:SrTiO₃ junction

Jia Lu(芦佳)¹, Yu-Lin Gan(甘渝林)¹, Yun-Lin Lei(雷蕴麟)², Lei Yan(颜雷)^{1, †}, and Hong Ding(丁洪)^1,3,4$

1 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences (CAS), Beijing 100190, China
2 College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, China
3 Department of Physics, University of Chinese Academy of Sciences, Beijing 100049, China
4 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2020-07-21 Revised:2020-09-10 Accepted:2020-09-28 Online:2020-11-05 Published:2020-11-03
Contact: ^†Corresponding author. E-mail: lyan@iphy.ac.cn
Supported by:
the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB28000000 and XDB07000000), the National Key Research and Development Program of China (Grant No. 2016YFA0300600), and the Fund from the Beijing Municipal Science & Technology Commission (Grant No. Z191100007219012).

摘要/Abstract

Abstract:

EuS is one of typical ferromagnetic semiconductor using as spin filter in spintronic devices, and the doped one could be a good spin injector. Herein, we fabricate a spin-functional tunnel junction by epitaxially growing the ferromagnetic EuS film on Nb-doped SrTiO₃. The improvement of Curie temperature up to 35 K is associated with indirect exchange through additional charge carriers at the interface of EuS/Nb:STO junction. Its magnetic field controlled current–voltage curves indicate the large magnetoresistance (MR) effect in EuS barriers as a highly spin-polarized injector. The negative MR is up to 60% in 10-nm EuS/Nb:STO at 4 T and 30 K. The MR is enhanced with increasing thickness of EuS barrier. The large negative MR effect over a wide temperature range makes this junction into a potential candidate for spintronic devices.

Key words: EuS/Nb:SrTiO₃ tunnel junction, spin filter, magnetoresistance

Jia Lu(芦佳), Yu-Lin Gan(甘渝林), Yun-Lin Lei(雷蕴麟), Lei Yan(颜雷), Hong Ding(丁洪). [J]. 中国物理B, 2020, 29(11): 117503-.

Jia Lu(芦佳), Yu-Lin Gan(甘渝林), Yun-Lin Lei(雷蕴麟), Lei Yan(颜雷), and Hong Ding(丁洪)$. Investigation of the magnetoresistance in EuS/Nb:SrTiO₃ junction[J]. Chin. Phys. B, 2020, 29(11): 117503-.

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参考文献 36

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Investigation of the magnetoresistance in EuS/Nb:SrTiO₃ junction

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