Room-temperature electric control of exchange bias effect in CoO1-δ/Co films using Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (110) substrates

doi:10.1088/1674-1056/aba611

中国物理B ›› 2020, Vol. 29 ›› Issue (9): 98503-098503.doi: 10.1088/1674-1056/aba611

Room-temperature electric control of exchange bias effect in CoO_1-δ/Co films using Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ (110) substrates

Xin Wen(闻馨), Rui Wu(吴锐), Wen-Yun Yang(杨文云), Chang-Sheng Wang(王常生), Shun-Quan Liu(刘顺荃), Jing-Zhi Han(韩景智), Jin-Bo Yang(杨金波)

1 State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China;
2 Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing 100871, China;
3 Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

收稿日期:2020-06-08 修回日期:2020-07-03 接受日期:2020-07-15 出版日期:2020-09-05 发布日期:2020-09-05
通讯作者: Rui Wu E-mail:wurui2010@pku.edu.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant Nos. 2017YFA0206303 and 2017YFA020630) and the National Natural Science Foundation of China (Grant Nos. 11975035 and 51731001).

Room-temperature electric control of exchange bias effect in CoO_1-δ/Co films using Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ (110) substrates

Xin Wen(闻馨)¹, Rui Wu(吴锐)¹, Wen-Yun Yang(杨文云)^1,2,3, Chang-Sheng Wang(王常生)^1,2,3, Shun-Quan Liu(刘顺荃)^1,2,3, Jing-Zhi Han(韩景智)^1,2,3, Jin-Bo Yang(杨金波)^1,2,3

1 State Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China;
2 Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing 100871, China;
3 Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

Received:2020-06-08 Revised:2020-07-03 Accepted:2020-07-15 Online:2020-09-05 Published:2020-09-05
Contact: Rui Wu E-mail:wurui2010@pku.edu.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant Nos. 2017YFA0206303 and 2017YFA020630) and the National Natural Science Foundation of China (Grant Nos. 11975035 and 51731001).

摘要/Abstract

摘要： Significant electric control of exchange bias effect in a simple CoO_1-δ/Co system, grown on piezoelectric Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ (110) (PMN-PT) substrates, is achieved at room temperature. Obvious changes in both the coercivity field (H_C) and the exchange bias field (H_E), of 31% and 5%, respectively, have been observed when the electric field is applied to the substrate. While the change of coercivity is related to the enhanced uniaxial anisotropy in the ferromagnetic layer, the change of the exchange bias field can only originate from the spin reorientation in the antiferromagnetic CoO_1-δ layer caused by the strain-induced magnetoelastic effect. A large H_E/H_C > 2, and H_E～ 110 Oe at room temperature, as well as the low-energy fabrication of this system, make it a practical system for spintronic device applications.

关键词: electric control, exchange bias, PMN-PT, magnetic anisotropy

Abstract: Significant electric control of exchange bias effect in a simple CoO_1-δ/Co system, grown on piezoelectric Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ (110) (PMN-PT) substrates, is achieved at room temperature. Obvious changes in both the coercivity field (H_C) and the exchange bias field (H_E), of 31% and 5%, respectively, have been observed when the electric field is applied to the substrate. While the change of coercivity is related to the enhanced uniaxial anisotropy in the ferromagnetic layer, the change of the exchange bias field can only originate from the spin reorientation in the antiferromagnetic CoO_1-δ layer caused by the strain-induced magnetoelastic effect. A large H_E/H_C > 2, and H_E～ 110 Oe at room temperature, as well as the low-energy fabrication of this system, make it a practical system for spintronic device applications.

Key words: electric control, exchange bias, PMN-PT, magnetic anisotropy

中图分类号: (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

85.75.-d

85.75.Dd (Magnetic memory using magnetic tunnel junctions) 75.50.-y (Studies of specific magnetic materials) 75.30.Gw (Magnetic anisotropy)

闻馨, 吴锐, 杨文云, 王常生, 刘顺荃, 韩景智, 杨金波. Room-temperature electric control of exchange bias effect in CoO_1-δ/Co films using Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ (110) substrates[J]. 中国物理B, 2020, 29(9): 98503-098503.

Xin Wen(闻馨), Rui Wu(吴锐), Wen-Yun Yang(杨文云), Chang-Sheng Wang(王常生), Shun-Quan Liu(刘顺荃), Jing-Zhi Han(韩景智), Jin-Bo Yang(杨金波). Room-temperature electric control of exchange bias effect in CoO_1-δ/Co films using Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ (110) substrates[J]. Chin. Phys. B, 2020, 29(9): 98503-098503.

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Room-temperature electric control of exchange bias effect in CoO_1-δ/Co films using Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ (110) substrates

Room-temperature electric control of exchange bias effect in CoO_1-δ/Co films using Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ (110) substrates

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