Epitaxial growth of antimony nanofilms on HOPG and thermal desorption to control the film thickness

doi:10.1088/1674-1056/aba27c

中国物理B ›› 2020, Vol. 29 ›› Issue (9): 96801-096801.doi: 10.1088/1674-1056/aba27c

Epitaxial growth of antimony nanofilms on HOPG and thermal desorption to control the film thickness

Shuya Xing(邢淑雅), Le Lei(雷乐), Haoyu Dong(董皓宇), Jianfeng Guo(郭剑峰), Feiyue Cao(曹飞跃), Shangzhi Gu(顾尚志), Sabir Hussain, Fei Pang(庞斐), Wei Ji(季威), Rui Xu(许瑞), Zhihai Cheng(程志海)

1 Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China;
2 CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China;
3 University of Chinese Academy of Sciences, Beijing 100039, China

收稿日期:2020-05-24 修回日期:2020-06-23 接受日期:2020-07-03 出版日期:2020-09-05 发布日期:2020-09-05
通讯作者: Fei Pang, Zhihai Cheng E-mail:feipang@ruc.edu.cn;zhihaicheng@ruc.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 21622304, 61674045, 11604063, and 61911540074), the National Key Research and Development Program of China (Grant No. 2016YFA0200700), the Strategic Priority Research Program and Key Research Program of Frontier Sciences and Instrument Developing Project (Chinese Academy of Sciences, CAS) (Grant Nos. XDB30000000, QYZDB-SSW-SYS031, and YZ201418). Z. H. Cheng was supported by Distinguished Technical Talents Project and Youth Innovation Promotion Association CAS, the Fundamental Research Funds for the Central Universities, China, and the Research Funds of Renmin University of China (Grant No. 18XNLG01).

Epitaxial growth of antimony nanofilms on HOPG and thermal desorption to control the film thickness

Shuya Xing(邢淑雅)¹, Le Lei(雷乐)¹, Haoyu Dong(董皓宇)¹, Jianfeng Guo(郭剑峰)¹, Feiyue Cao(曹飞跃)¹, Shangzhi Gu(顾尚志)¹, Sabir Hussain^2,3, Fei Pang(庞斐)¹, Wei Ji(季威)¹, Rui Xu(许瑞)¹, Zhihai Cheng(程志海)¹

1 Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China;
2 CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China;
3 University of Chinese Academy of Sciences, Beijing 100039, China

Received:2020-05-24 Revised:2020-06-23 Accepted:2020-07-03 Online:2020-09-05 Published:2020-09-05
Contact: Fei Pang, Zhihai Cheng E-mail:feipang@ruc.edu.cn;zhihaicheng@ruc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 21622304, 61674045, 11604063, and 61911540074), the National Key Research and Development Program of China (Grant No. 2016YFA0200700), the Strategic Priority Research Program and Key Research Program of Frontier Sciences and Instrument Developing Project (Chinese Academy of Sciences, CAS) (Grant Nos. XDB30000000, QYZDB-SSW-SYS031, and YZ201418). Z. H. Cheng was supported by Distinguished Technical Talents Project and Youth Innovation Promotion Association CAS, the Fundamental Research Funds for the Central Universities, China, and the Research Funds of Renmin University of China (Grant No. 18XNLG01).

摘要/Abstract

摘要： Group-V elemental nanofilms were predicted to exhibit interesting physical properties such as nontrivial topological properties due to their strong spin-orbit coupling, the quantum confinement, and surface effect. It was reported that the ultrathin Sb nanofilms can undergo a series of topological transitions as a function of the film thickness h: from a topological semimetal (h>7.8 nm) to a topological insulator (7.8 nm > h > 2.7 nm), then a quantum spin Hall (QSH) phase (2.7 nm > h > 1.0 nm) and a topological trivial semiconductor (h< 1.0 nm). Here, we report a comprehensive investigation on the epitaxial growth of Sb nanofilms on highly oriented pyrolytic graphite (HOPG) substrate and the controllable thermal desorption to achieve their specific thickness. The morphology, thickness, atomic structure, and thermal-strain effect of the Sb nanofilms were characterized by a combination study of scanning electron microscopy (SEM), atomic force microscopy (AFM), and scanning tunneling microscopy (STM). The realization of Sb nanofilms with specific thickness paves the way for the further exploring their thickness-dependent topological phase transitions and exotic physical properties.

关键词: epitaxial growth, antimony films, scanning tunneling microscope (STM), thermal desorption

Abstract: Group-V elemental nanofilms were predicted to exhibit interesting physical properties such as nontrivial topological properties due to their strong spin-orbit coupling, the quantum confinement, and surface effect. It was reported that the ultrathin Sb nanofilms can undergo a series of topological transitions as a function of the film thickness h: from a topological semimetal (h>7.8 nm) to a topological insulator (7.8 nm > h > 2.7 nm), then a quantum spin Hall (QSH) phase (2.7 nm > h > 1.0 nm) and a topological trivial semiconductor (h< 1.0 nm). Here, we report a comprehensive investigation on the epitaxial growth of Sb nanofilms on highly oriented pyrolytic graphite (HOPG) substrate and the controllable thermal desorption to achieve their specific thickness. The morphology, thickness, atomic structure, and thermal-strain effect of the Sb nanofilms were characterized by a combination study of scanning electron microscopy (SEM), atomic force microscopy (AFM), and scanning tunneling microscopy (STM). The realization of Sb nanofilms with specific thickness paves the way for the further exploring their thickness-dependent topological phase transitions and exotic physical properties.

Key words: epitaxial growth, antimony films, scanning tunneling microscope (STM), thermal desorption

中图分类号: (Semiconductors)

68.35.bg

68.55.-a (Thin film structure and morphology) 68.43.Vx (Thermal desorption) 68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM))

邢淑雅, 雷乐, 董皓宇, 郭剑峰, 曹飞跃, 顾尚志, Sabir Hussain, 庞斐, 季威, 许瑞, 程志海. Epitaxial growth of antimony nanofilms on HOPG and thermal desorption to control the film thickness[J]. 中国物理B, 2020, 29(9): 96801-096801.

Shuya Xing(邢淑雅), Le Lei(雷乐), Haoyu Dong(董皓宇), Jianfeng Guo(郭剑峰), Feiyue Cao(曹飞跃), Shangzhi Gu(顾尚志), Sabir Hussain, Fei Pang(庞斐), Wei Ji(季威), Rui Xu(许瑞), Zhihai Cheng(程志海). Epitaxial growth of antimony nanofilms on HOPG and thermal desorption to control the film thickness[J]. Chin. Phys. B, 2020, 29(9): 96801-096801.

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Epitaxial growth of antimony nanofilms on HOPG and thermal desorption to control the film thickness

Epitaxial growth of antimony nanofilms on HOPG and thermal desorption to control the film thickness

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