Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications

doi:10.1088/1674-1056/ab9de6

中国物理B ›› 2020, Vol. 29 ›› Issue (9): 98502-098502.doi: 10.1088/1674-1056/ab9de6

Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications

Wenqiang Song(宋文强), Fei Hou(侯飞), Feibo Du(杜飞波), Zhiwei Liu(刘志伟), Juin J. Liou(刘俊杰)

1 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
2 The College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China

收稿日期:2020-03-29 修回日期:2020-05-21 接受日期:2020-06-18 出版日期:2020-09-05 发布日期:2020-09-05
通讯作者: Zhiwei Liu E-mail:ziv_liu@hotmail.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61874098 and 61974017) and the Fundamental Research Project for Central Universities, China (Grant No. ZYGX2018J025).

Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications

Wenqiang Song(宋文强)¹, Fei Hou(侯飞)¹, Feibo Du(杜飞波)¹, Zhiwei Liu(刘志伟)¹, Juin J. Liou(刘俊杰)²

1 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
2 The College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China

Received:2020-03-29 Revised:2020-05-21 Accepted:2020-06-18 Online:2020-09-05 Published:2020-09-05
Contact: Zhiwei Liu E-mail:ziv_liu@hotmail.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61874098 and 61974017) and the Fundamental Research Project for Central Universities, China (Grant No. ZYGX2018J025).

摘要/Abstract

摘要： A robust electron device called the enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/24-V BCD process. The proposed EGDTSCR is constructed by adding two gated diodes into a conventional ESD device called the modified lateral silicon-controlled rectifier (MLSCR). With the shunting effect of the surface gated diode path, the proposed EGDTSCR, with a width of 50 μm, exhibits a higher failure current (i.e., 3.82 A) as well as a higher holding voltage (i.e., 10.21 V) than the MLSCR.

关键词: electrostatic discharge (ESD), enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR), modified lateral silicon-controlled rectifier (MLSCR), failure current, holding voltage

Abstract: A robust electron device called the enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/24-V BCD process. The proposed EGDTSCR is constructed by adding two gated diodes into a conventional ESD device called the modified lateral silicon-controlled rectifier (MLSCR). With the shunting effect of the surface gated diode path, the proposed EGDTSCR, with a width of 50 μm, exhibits a higher failure current (i.e., 3.82 A) as well as a higher holding voltage (i.e., 10.21 V) than the MLSCR.

Key words: electrostatic discharge (ESD), enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR), modified lateral silicon-controlled rectifier (MLSCR), failure current, holding voltage

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

宋文强, 侯飞, 杜飞波, 刘志伟, 刘俊杰. Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications[J]. 中国物理B, 2020, 29(9): 98502-098502.

Wenqiang Song(宋文强), Fei Hou(侯飞), Feibo Du(杜飞波), Zhiwei Liu(刘志伟), Juin J. Liou(刘俊杰). Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications[J]. Chin. Phys. B, 2020, 29(9): 98502-098502.

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Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications

Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications

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