Silicon-based optoelectronic synaptic devices

doi:10.1088/1674-1056/ab973f

中国物理B ›› 2020, Vol. 29 ›› Issue (7): 70703-070703.doi: 10.1088/1674-1056/ab973f

所属专题： SPECIAL TOPIC — Physics in neuromorphic devices

• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇下一篇

Silicon-based optoelectronic synaptic devices

Lei Yin(尹蕾), Xiaodong Pi(皮孝东), Deren Yang(杨德仁)

State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

收稿日期:2020-04-02 修回日期:2020-05-25 出版日期:2020-07-05 发布日期:2020-07-05
通讯作者: Xiaodong Pi, Deren Yang E-mail:xdpi@zju.edu.cn;mseyang@zju.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0205704 and 2018YFB2200101), the National Natural Science Foundation of China (Grant Nos. 91964107 and 61774133), the Fundamental Research Funds for the Central Universities, China (Grant No. 2018XZZX003-02), the National Natural Science Foundation of China for Innovative Research Groups (Grant No. 61721005), and the Zhejiang University Education Foundation Global Partnership Fund.

Silicon-based optoelectronic synaptic devices

Lei Yin(尹蕾), Xiaodong Pi(皮孝东), Deren Yang(杨德仁)

State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Received:2020-04-02 Revised:2020-05-25 Online:2020-07-05 Published:2020-07-05
Contact: Xiaodong Pi, Deren Yang E-mail:xdpi@zju.edu.cn;mseyang@zju.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0205704 and 2018YFB2200101), the National Natural Science Foundation of China (Grant Nos. 91964107 and 61774133), the Fundamental Research Funds for the Central Universities, China (Grant No. 2018XZZX003-02), the National Natural Science Foundation of China for Innovative Research Groups (Grant No. 61721005), and the Zhejiang University Education Foundation Global Partnership Fund.

摘要/Abstract

摘要： High-performance neuromorphic computing (i.e., brain-like computing) is envisioned to seriously demand optoelectronically integrated artificial neural networks (ANNs) in the future. Optoelectronic synaptic devices are critical building blocks for optoelectronically integrated ANNs. For the large-scale deployment of high-performance neuromorphic computing in the future, it would be advantageous to fabricate optoelectronic synaptic devices by using advanced silicon (Si) technologies. This calls for the development of Si-based optoelectronic synaptic devices. In this work we review the use of Si materials to make optoelectronic synaptic devices, which have either two-terminal or three-terminal structures. A series of important synaptic functionalities have been well mimicked by using these Si-based optoelectronic synaptic devices. We also present the outlook of using Si materials for optoelectronic synaptic devices.

关键词: silicon, optoelectronic synaptic devices, neuromorphic computing

Abstract: High-performance neuromorphic computing (i.e., brain-like computing) is envisioned to seriously demand optoelectronically integrated artificial neural networks (ANNs) in the future. Optoelectronic synaptic devices are critical building blocks for optoelectronically integrated ANNs. For the large-scale deployment of high-performance neuromorphic computing in the future, it would be advantageous to fabricate optoelectronic synaptic devices by using advanced silicon (Si) technologies. This calls for the development of Si-based optoelectronic synaptic devices. In this work we review the use of Si materials to make optoelectronic synaptic devices, which have either two-terminal or three-terminal structures. A series of important synaptic functionalities have been well mimicked by using these Si-based optoelectronic synaptic devices. We also present the outlook of using Si materials for optoelectronic synaptic devices.

Key words: silicon, optoelectronic synaptic devices, neuromorphic computing

中图分类号: (Neural networks, fuzzy logic, artificial intelligence)

07.05.Mh

42.79.Ta (Optical computers, logic elements, interconnects, switches; neural networks) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)

尹蕾, 皮孝东, 杨德仁. Silicon-based optoelectronic synaptic devices[J]. 中国物理B, 2020, 29(7): 70703-070703.

Lei Yin(尹蕾), Xiaodong Pi(皮孝东), Deren Yang(杨德仁). Silicon-based optoelectronic synaptic devices[J]. Chin. Phys. B, 2020, 29(7): 70703-070703.

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Silicon-based optoelectronic synaptic devices

Silicon-based optoelectronic synaptic devices

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