High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing

doi:10.1088/1674-1056/ab973e

中国物理B ›› 2020, Vol. 29 ›› Issue (8): 87303-087303.doi: 10.1088/1674-1056/ab973e

• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇下一篇

High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing

Ying Zan(昝颖), Yong-Liang Li(李永亮), Xiao-Hong Cheng(程晓红), Zhi-Qian Zhao(赵治乾), Hao-Yan Liu(刘昊炎), Zhen-Hua Hu(吴振华), An-Yan Du(都安彦), Wen-Wu Wang(王文武)

Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2020-04-29 修回日期:2020-05-25 出版日期:2020-08-05 发布日期:2020-08-05
通讯作者: Yong-Liang Li E-mail:liyongliang@ime.ac.cn
基金资助:
Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4202078) and the National Key Project of Science and Technology of China (Grant No. 2017ZX02315001-002).

High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing

Ying Zan(昝颖), Yong-Liang Li(李永亮), Xiao-Hong Cheng(程晓红), Zhi-Qian Zhao(赵治乾), Hao-Yan Liu(刘昊炎), Zhen-Hua Hu(吴振华), An-Yan Du(都安彦), Wen-Wu Wang(王文武)

Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2020-04-29 Revised:2020-05-25 Online:2020-08-05 Published:2020-08-05
Contact: Yong-Liang Li E-mail:liyongliang@ime.ac.cn
Supported by:
Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4202078) and the National Key Project of Science and Technology of China (Grant No. 2017ZX02315001-002).

摘要/Abstract

摘要： A high crystalline quality of SiGe fin with an Si-rich composition area using the replacement fin processing is systematically demonstrated in this paper. The fin replacement process based on a standard FinFET process is developed. A width of less than 20-nm SiGe fin without obvious defect impact both in the direction across the fin and in the direction along the fin is verified by using the high angle annular dark field scanning transmission electron microscopy and the scanning moiré fringe imaging technique. Moreover, the SiGe composition is inhomogenous in the width of the fin. This is induced by the formation of 111 facets. Due to the atomic density of the 111 facets being higher, the epitaxial growth in the direction perpendicular to these facets is slower than in the direction perpendicular to 001. The Ge incorporation is then higher on the 111 facets than on the 001 facets. So, an Si-rich area is observed in the central area and on the bottom of SiGe fin.

关键词: SiGe, selective epitaxial growth, FinFET, replacement fin processing

Abstract: A high crystalline quality of SiGe fin with an Si-rich composition area using the replacement fin processing is systematically demonstrated in this paper. The fin replacement process based on a standard FinFET process is developed. A width of less than 20-nm SiGe fin without obvious defect impact both in the direction across the fin and in the direction along the fin is verified by using the high angle annular dark field scanning transmission electron microscopy and the scanning moiré fringe imaging technique. Moreover, the SiGe composition is inhomogenous in the width of the fin. This is induced by the formation of 111 facets. Due to the atomic density of the 111 facets being higher, the epitaxial growth in the direction perpendicular to these facets is slower than in the direction perpendicular to 001. The Ge incorporation is then higher on the 111 facets than on the 001 facets. So, an Si-rich area is observed in the central area and on the bottom of SiGe fin.

Key words: SiGe, selective epitaxial growth, FinFET, replacement fin processing

中图分类号: (Electronic structure of nanoscale materials and related systems)

73.22.-f

73.61.-r (Electrical properties of specific thin films)

昝颖, 李永亮, 程晓红, 赵治乾, 刘昊炎, 吴振华, 都安彦, 王文武. High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing[J]. 中国物理B, 2020, 29(8): 87303-087303.

Ying Zan(昝颖), Yong-Liang Li(李永亮), Xiao-Hong Cheng(程晓红), Zhi-Qian Zhao(赵治乾), Hao-Yan Liu(刘昊炎), Zhen-Hua Hu(吴振华), An-Yan Du(都安彦), Wen-Wu Wang(王文武). High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing[J]. Chin. Phys. B, 2020, 29(8): 87303-087303.

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High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing

High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing

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