中国物理B ›› 2020, Vol. 29 ›› Issue (8): 84101-084101.doi: 10.1088/1674-1056/ab961b
• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇 下一篇
Picosecond terahertz pump-probe realized from Chinese terahertz free-electron laser
Chao Wang(王超), Wen Xu(徐文), Hong-Ying Mei(梅红樱), Hua Qin(秦华), Xin-Nian Zhao(赵昕念), Hua Wen(温华), Chao Zhang(张超), Lan Ding(丁岚), Yong Xu(徐勇), Peng Li(李鹏), Dai Wu(吴岱), Ming Li(黎明)
- 1 Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China;
2 University of Science and Technology of China, Hefei 230026, China;
3 School of Physics and Astronomy and Yunnan Key Laboratory for Quantum Information, Yunnan University, Kunming 650091, China;
4 Faculty of Information Engineering, Huanghuai University, Zhumadian 463000, China;
5 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
6 Institute of Applied Electronics, Chinese Academy of Engineering Physics, Mianyang 621900, China
Picosecond terahertz pump-probe realized from Chinese terahertz free-electron laser
Chao Wang(王超)1,2, Wen Xu(徐文)1,3, Hong-Ying Mei(梅红樱)4,1, Hua Qin(秦华)5, Xin-Nian Zhao(赵昕念)1,2, Hua Wen(温华)1,2, Chao Zhang(张超)1, Lan Ding(丁岚)3, Yong Xu(徐勇)6, Peng Li(李鹏)6, Dai Wu(吴岱)6, Ming Li(黎明)6
- 1 Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China;
2 University of Science and Technology of China, Hefei 230026, China;
3 School of Physics and Astronomy and Yunnan Key Laboratory for Quantum Information, Yunnan University, Kunming 650091, China;
4 Faculty of Information Engineering, Huanghuai University, Zhumadian 463000, China;
5 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
6 Institute of Applied Electronics, Chinese Academy of Engineering Physics, Mianyang 621900, China
摘要：
Electron energy relaxation time τ is one of the key physical parameters for electronic materials. In this study, we develop a new technique to measure τ in a semiconductor via monochrome picosecond (ps) terahertz (THz) pump and probe experiment. The special THz pulse structure of Chinese THz free-electron laser (CTFEL) is utilized to realize such a technique, which can be applied to the investigation into THz dynamics of electronic and optoelectronic materials and devices. We measure the THz dynamical electronic properties of high-mobility n-GaSb wafer at 1.2 THz, 1.6 THz, and 2.4 THz at room temperature and in free space. The obtained electron energy relaxation time for n-GaSb is in line with that measured via, e.g., four-wave mixing techniques. The major advantages of monochrome ps THz pump-probe in the study of electronic and optoelectronic materials are discussed in comparison with other ultrafast optoelectronic techniques. This work is relevant to the application of pulsed THz free-electron lasers and also to the development of advanced ultrafast measurement technique for the investigation of dynamical properties of electronic and optoelectronic materials.
中图分类号: (Free-electron lasers)
- 41.60.Cr