中国物理B ›› 2020, Vol. 29 ›› Issue (7): 76802-076802.doi: 10.1088/1674-1056/ab90ed

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Influence comparison of N2 and NH3 nitrogen sources on AlN films grown by halide vapor phase epitaxy

Jing-Jing Chen(陈晶晶), Jun Huang(黄俊), Xu-Jun Su(苏旭军), Mu-Tong Niu(牛牧童), Ke Xu(徐科)   

  1. 1 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    2 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
    3 Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China
  • 收稿日期:2020-01-20 修回日期:2020-04-09 出版日期:2020-07-05 发布日期:2020-07-05
  • 通讯作者: Ke Xu E-mail:kxu2006@sinano.ac.cn
  • 基金资助:
    Project supported by the National Key R&D Program of China (Grant No. 2017YFB0404100).

Influence comparison of N2 and NH3 nitrogen sources on AlN films grown by halide vapor phase epitaxy

Jing-Jing Chen(陈晶晶)1,2, Jun Huang(黄俊)1, Xu-Jun Su(苏旭军)1, Mu-Tong Niu(牛牧童)1, Ke Xu(徐科)1,2,3   

  1. 1 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    2 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
    3 Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China
  • Received:2020-01-20 Revised:2020-04-09 Online:2020-07-05 Published:2020-07-05
  • Contact: Ke Xu E-mail:kxu2006@sinano.ac.cn
  • Supported by:
    Project supported by the National Key R&D Program of China (Grant No. 2017YFB0404100).

摘要: A comparison of the nitrogen sources (N2 and NH3) influence on AlN films grown by high-temperature halide vapor phase epitaxy (HVPE) is reported. The x-ray rocking curves (XRCs) indicate that the full width at half maximum (FWHM) of (0002) plane for AlN films using N2 as nitrogen source is generally smaller than that using NH3. Optical microscope and atomic force microscope (AFM) results show that it is presently still more difficult to control the crack and surface morphology of AlN films with thicknesses of 5-10 μm using N2 as the nitrogen source compared to that using NH3. Compared with one-step growth, two-step growth strategy has been proved more effective in stress control and reducing the density of threading dislocations for AlN epilayers using N2 as the nitrogen source. These investigations reveal that using N2 as nitrogen source in HVPE growth of AlN is immature at present, but exhibits great potential.

关键词: aluminum nitride, halide vapor phase epitaxy, surface structure, nitrogen source

Abstract: A comparison of the nitrogen sources (N2 and NH3) influence on AlN films grown by high-temperature halide vapor phase epitaxy (HVPE) is reported. The x-ray rocking curves (XRCs) indicate that the full width at half maximum (FWHM) of (0002) plane for AlN films using N2 as nitrogen source is generally smaller than that using NH3. Optical microscope and atomic force microscope (AFM) results show that it is presently still more difficult to control the crack and surface morphology of AlN films with thicknesses of 5-10 μm using N2 as the nitrogen source compared to that using NH3. Compared with one-step growth, two-step growth strategy has been proved more effective in stress control and reducing the density of threading dislocations for AlN epilayers using N2 as the nitrogen source. These investigations reveal that using N2 as nitrogen source in HVPE growth of AlN is immature at present, but exhibits great potential.

Key words: aluminum nitride, halide vapor phase epitaxy, surface structure, nitrogen source

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy) 61.72.-y (Defects and impurities in crystals; microstructure)