Hydrodynamic simulation of chaotic dynamics in InGaAs oscillator in terahertz region

doi:10.1088/1674-1056/ab696f

中国物理B ›› 2020, Vol. 29 ›› Issue (4): 47302-047302.doi: 10.1088/1674-1056/ab696f

所属专题： SPECIAL TOPIC —Terahertz physics

• SPECIAL TOPIC—Terahertz physics • 上一篇下一篇

Hydrodynamic simulation of chaotic dynamics in InGaAs oscillator in terahertz region

Wei Feng(冯伟)

Department of Physics, Jiangsu University, Zhenjiang 212013, China

收稿日期:2019-12-12 修回日期:2020-01-03 出版日期:2020-04-05 发布日期:2020-04-05
通讯作者: Wei Feng E-mail:wfeng@ujs.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11604126) and China Scholarship Council (Grant No. 201808695016).

Hydrodynamic simulation of chaotic dynamics in InGaAs oscillator in terahertz region

Wei Feng(冯伟)

Department of Physics, Jiangsu University, Zhenjiang 212013, China

Received:2019-12-12 Revised:2020-01-03 Online:2020-04-05 Published:2020-04-05
Contact: Wei Feng E-mail:wfeng@ujs.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11604126) and China Scholarship Council (Grant No. 201808695016).

摘要/Abstract

摘要： Hydrodynamic calculations of the chaotic behaviors in n⁺nn⁺ In_0.53Ga_0.47As devices biased in terahertz (THz) electric field have been carried out. Their different transport characteristics have been carefully investigated by tuning the n-region parameters and the applied ac radiation. The oscillatory mode is found to transit between synchronization and chaos, as verified by the first return map. The transitions result from the mixture of the dc induced oscillation and the one driven by the ac radiation. Our findings will give further and thorough understanding of electron transport in In_0.53Ga_0.47As terahertz oscillator, which is a promising solid-state THz source.

关键词: terahertz, chaotic, current oscillation

Abstract: Hydrodynamic calculations of the chaotic behaviors in n⁺nn⁺ In_0.53Ga_0.47As devices biased in terahertz (THz) electric field have been carried out. Their different transport characteristics have been carefully investigated by tuning the n-region parameters and the applied ac radiation. The oscillatory mode is found to transit between synchronization and chaos, as verified by the first return map. The transitions result from the mixture of the dc induced oscillation and the one driven by the ac radiation. Our findings will give further and thorough understanding of electron transport in In_0.53Ga_0.47As terahertz oscillator, which is a promising solid-state THz source.

Key words: terahertz, chaotic, current oscillation

中图分类号: (III-V semiconductors)

73.61.Ey

73.50.Fq (High-field and nonlinear effects) 85.30.Fg (Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)) 85.30.De (Semiconductor-device characterization, design, and modeling)

冯伟. Hydrodynamic simulation of chaotic dynamics in InGaAs oscillator in terahertz region[J]. 中国物理B, 2020, 29(4): 47302-047302.

Wei Feng(冯伟). Hydrodynamic simulation of chaotic dynamics in InGaAs oscillator in terahertz region[J]. Chin. Phys. B, 2020, 29(4): 47302-047302.

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Hydrodynamic simulation of chaotic dynamics in InGaAs oscillator in terahertz region

Hydrodynamic simulation of chaotic dynamics in InGaAs oscillator in terahertz region

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