Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time

doi:10.1088/1674-1056/ab4e89

中国物理B ›› 2019, Vol. 28 ›› Issue (12): 127201-127201.doi: 10.1088/1674-1056/ab4e89

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time

Qing Liu(刘青), Hong-Bin Pu(蒲红斌), Xi Wang(王曦)

Xi'an University of Technology, Xi'an 710048, China

收稿日期:2019-07-26 修回日期:2019-09-27 出版日期:2019-12-05 发布日期:2019-12-05
通讯作者: Hong-Bin Pu E-mail:puhongbin@xaut.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51677149).

Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time

Qing Liu(刘青), Hong-Bin Pu(蒲红斌), Xi Wang(王曦)

Xi'an University of Technology, Xi'an 710048, China

Received:2019-07-26 Revised:2019-09-27 Online:2019-12-05 Published:2019-12-05
Contact: Hong-Bin Pu E-mail:puhongbin@xaut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51677149).

摘要/Abstract

摘要： An ultra-high voltage 4H-silicon carbide (SiC) gate turn-off (GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical field is induced to enhance the transportation of the electrons in the thin p-base and reduce recombination. As a result, the turn-on characteristics are improved. What is more, to obtain a low turn-off loss, an alternating p⁺/n⁺ region formed in the backside acts as the anode in the GTO thyristor. Consequently, another path formed by the reverse-biased n⁺-p junction accelerates the fast removal of excess electrons during turn-off. This work demonstrates that the turn-on time and turn-off time of the new structure are reduced to 37 ns and 783.1 ns, respectively, under a bus voltage of 8000 V and load current of 100 A/cm².

关键词: 4H-SiC, gate turn-off (GTO) thyristor, turn-on, turn-off

Abstract: An ultra-high voltage 4H-silicon carbide (SiC) gate turn-off (GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical field is induced to enhance the transportation of the electrons in the thin p-base and reduce recombination. As a result, the turn-on characteristics are improved. What is more, to obtain a low turn-off loss, an alternating p⁺/n⁺ region formed in the backside acts as the anode in the GTO thyristor. Consequently, another path formed by the reverse-biased n⁺-p junction accelerates the fast removal of excess electrons during turn-off. This work demonstrates that the turn-on time and turn-off time of the new structure are reduced to 37 ns and 783.1 ns, respectively, under a bus voltage of 8000 V and load current of 100 A/cm².

Key words: 4H-SiC, gate turn-off (GTO) thyristor, turn-on, turn-off

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Rs (Thyristors)

刘青, 蒲红斌, 王曦. Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time[J]. 中国物理B, 2019, 28(12): 127201-127201.

Qing Liu(刘青), Hong-Bin Pu(蒲红斌), Xi Wang(王曦). Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time[J]. Chin. Phys. B, 2019, 28(12): 127201-127201.

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Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time

Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time

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