中国物理B ›› 2019, Vol. 28 ›› Issue (8): 87301-087301.doi: 10.1088/1674-1056/28/8/087301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Energy band alignment at Cu2O/ZnO heterojunctions characterized by in situ x-ray photoelectron spectroscopy

Yan Zhao(赵妍), Hong-Bu Yin(尹泓卜), Ya-Jun Fu(符亚军), Xue-Min Wang(王雪敏), Wei-Dong Wu(吴卫东)   

  1. Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
  • 收稿日期:2018-11-25 修回日期:2019-05-06 出版日期:2019-08-05 发布日期:2019-08-05
  • 通讯作者: Wei-Dong Wu E-mail:wuweidongding@163.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11404302) and the Laser Fusion Research Center Funds for Young Talents, China (Grant No. RCFPD1-2017-9).

Energy band alignment at Cu2O/ZnO heterojunctions characterized by in situ x-ray photoelectron spectroscopy

Yan Zhao(赵妍), Hong-Bu Yin(尹泓卜), Ya-Jun Fu(符亚军), Xue-Min Wang(王雪敏), Wei-Dong Wu(吴卫东)   

  1. Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
  • Received:2018-11-25 Revised:2019-05-06 Online:2019-08-05 Published:2019-08-05
  • Contact: Wei-Dong Wu E-mail:wuweidongding@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11404302) and the Laser Fusion Research Center Funds for Young Talents, China (Grant No. RCFPD1-2017-9).

摘要: With the increasing interest in Cu2O-based devices for photovoltaic applications, the energy band alignment at the Cu2O/ZnO heterojunction has received more and more attention. In this work, a high-quality Cu2O/ZnO heterojunction is fabricated on a c-Al2O3 substrate by laser-molecular beam epitaxy, and the energy band alignment is determined by x-ray photoelectron spectroscopy. The valence band of ZnO is found to be 1.97 eV below that of Cu2O. A type-Ⅱ band alignment exists at the Cu2O/ZnO heterojunction with a resulting conduction band offset of 0.77 eV, which is especially favorable for enhancing the efficiency of Cu2O/ZnO solar cells.

关键词: Cu2O, ZnO, x-ray photoelectron spectroscopy, laser-molecular beam epitaxy

Abstract: With the increasing interest in Cu2O-based devices for photovoltaic applications, the energy band alignment at the Cu2O/ZnO heterojunction has received more and more attention. In this work, a high-quality Cu2O/ZnO heterojunction is fabricated on a c-Al2O3 substrate by laser-molecular beam epitaxy, and the energy band alignment is determined by x-ray photoelectron spectroscopy. The valence band of ZnO is found to be 1.97 eV below that of Cu2O. A type-Ⅱ band alignment exists at the Cu2O/ZnO heterojunction with a resulting conduction band offset of 0.77 eV, which is especially favorable for enhancing the efficiency of Cu2O/ZnO solar cells.

Key words: Cu2O, ZnO, x-ray photoelectron spectroscopy, laser-molecular beam epitaxy

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq
82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)) 77.55.hf (ZnO) 73.20.At (Surface states, band structure, electron density of states)