High performance lateral Schottky diodes based on quasi-degenerated Ga2O3

doi:10.1088/1674-1056/28/3/038503

中国物理B ›› 2019, Vol. 28 ›› Issue (3): 38503-038503.doi: 10.1088/1674-1056/28/3/038503

所属专题： SPECIAL TOPIC — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

High performance lateral Schottky diodes based on quasi-degenerated Ga₂O₃

1 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing 210093, China;
3 Research Institute of Shenzhen, Nanjing University, Shenzhen 518057, China;
4 State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices, The 55^th Research Institute of China Electronics Technology Group Corporation, Nanjing 210016, China

收稿日期:2018-12-22 修回日期:2019-01-14 出版日期:2019-03-05 发布日期:2019-03-05
通讯作者: Jiandong Ye E-mail:yejd@nju.edu.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2017YFB0403003), the National Natural Science Foundation of China (Grant Nos. 61774081, 61322403, and 91850112), the State Key R&D Project of Jiangsu, China (Grant No. BE2018115), Shenzhen Fundamental Research Project, China (Grant Nos. 201773239 and 201888588), State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices, China (Grant No. 2017KF001), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 021014380093 and 021014380085).

High performance lateral Schottky diodes based on quasi-degenerated Ga₂O₃

Yang Xu(徐阳)¹, Xuanhu Chen(陈选虎)¹, Liang Cheng(程亮)¹, Fang-Fang Ren(任芳芳)^1,2,3, Jianjun Zhou(周建军)⁴, Song Bai(柏松)⁴, Hai Lu(陆海)¹, Shulin Gu(顾书林)^1,2, Rong Zhang(张荣)^1,2, Youdou Zheng(郑有炓)^1,2, Jiandong Ye(叶建东)^1,2,3

1 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing 210093, China;
3 Research Institute of Shenzhen, Nanjing University, Shenzhen 518057, China;
4 State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices, The 55^th Research Institute of China Electronics Technology Group Corporation, Nanjing 210016, China

Received:2018-12-22 Revised:2019-01-14 Online:2019-03-05 Published:2019-03-05
Contact: Jiandong Ye E-mail:yejd@nju.edu.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2017YFB0403003), the National Natural Science Foundation of China (Grant Nos. 61774081, 61322403, and 91850112), the State Key R&D Project of Jiangsu, China (Grant No. BE2018115), Shenzhen Fundamental Research Project, China (Grant Nos. 201773239 and 201888588), State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices, China (Grant No. 2017KF001), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 021014380093 and 021014380085).

摘要/Abstract

摘要：

Ni/β-Ga₂O₃ lateral Schottky barrier diodes (SBDs) were fabricated on a Sn-doped quasi-degenerate n⁺-Ga₂O₃ (201) bulk substrate. The resultant diodes with an area of 7.85×10^-5 cm² exhibited excellent rectifying characteristics with an ideality factor of 1.21, a forward current density (J) of 127.4 A/cm² at 1.4 V, a specific on-state resistance (R_{on, sp}) of 1.54 mΩ·cm², and an ultra-high on/off ratio of 2.1×10¹¹ at ±1 V. Due to a small depletion region in the highly-doped substrate, a breakdown feature was observed at -23 V, which corresponded to a breakdown field of 2.1 MV/cm and a power figure-of-merit (V_B²/Ron) of 3.4×105 W/cm². Forward current–voltage characteristics were described well by the thermionic emission theory while thermionic field emission and trap-assisted tunneling were the dominant transport mechanisms at low and high reverse biases, respectively, which was a result of the contribution of deep-level traps at the metal–semiconductor interface. The presence of interfacial traps also caused the difference in Schottky barrier heights of 1.31 eV and 1.64 eV respectively determined by current–voltage and capacitance–voltage characteristics. With reduced trapping effect and incorporation of drift layers, the β-Ga₂O₃ SBDs could further provide promising materials for delivering both high current output and high breakdown voltage.

关键词: β-Ga₂O₃, Schottky diode, transport mechanism, quasi-degeneration, rectifier

Abstract:

Key words: β-Ga₂O₃, Schottky diode, transport mechanism, quasi-degeneration, rectifier

中图分类号: (Surface barrier, boundary, and point contact devices)

85.30.Hi

72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping) 73.50.-h (Electronic transport phenomena in thin films) 84.30.Jc (Power electronics; power supply circuits)

徐阳, 陈选虎, 程亮, 任芳芳, 周建军, 柏松, 陆海, 顾书林, 张荣, 郑有炓, 叶建东. High performance lateral Schottky diodes based on quasi-degenerated Ga₂O₃[J]. 中国物理B, 2019, 28(3): 38503-038503.

Yang Xu(徐阳), Xuanhu Chen(陈选虎), Liang Cheng(程亮), Fang-Fang Ren(任芳芳), Jianjun Zhou(周建军), Song Bai(柏松), Hai Lu(陆海), Shulin Gu(顾书林), Rong Zhang(张荣), Youdou Zheng(郑有炓), Jiandong Ye(叶建东). High performance lateral Schottky diodes based on quasi-degenerated Ga₂O₃[J]. Chin. Phys. B, 2019, 28(3): 38503-038503.

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High performance lateral Schottky diodes based on quasi-degenerated Ga₂O₃

High performance lateral Schottky diodes based on quasi-degenerated Ga₂O₃

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