中国物理B ›› 2019, Vol. 28 ›› Issue (2): 28103-028103.doi: 10.1088/1674-1056/28/2/028103

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Inclusions in large diamond single crystals at different temperatures of synthesis

Fei Han(韩飞), Shang-Sheng Li(李尚升), Xue-Fei Jia(贾雪菲), Wei-Qin Chen(陈玮琴), Tai-Chao Su(宿太超), Mei-Hua Hu(胡美华), Kun-Peng Yu(于昆鹏), Jian-Kang Wang(王健康), Yu-Min Wu(吴玉敏), Hong-An Ma(马红安), Xiao-Peng Jia(贾晓鹏)   

  1. 1 School of Materials Science and Engineering, Henan Polytechnic University, Cultivating Base for Key Laboratory of Environment-friendly Inorganic Materials in University of Henan Province, Jiaozuo 454000, China;
    2 State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
  • 收稿日期:2018-09-06 修回日期:2018-11-28 出版日期:2019-02-05 发布日期:2019-02-05
  • 通讯作者: Shang-Sheng Li E-mail:lishsh@hpu.edu.cn
  • 基金资助:
    Project supported by the Natural Science Foundation of Henan Province, China (Grant No. 182300410279), the Key Science and Technology Research Project of Henan Province, China (Grant No. 182102210311), the Key Scientific Research Project in Colleges and Universities of Henan Province, China (Grant No. 18A430017), the Professional Practice Demonstration Base Program for Professional Degree Graduate in Material Engineering of Henan Polytechnic University, China (Grant No. 2016YJD03), and the Fund for the Innovative Research Team (in Science and Technology) in the University of Henan Province, China (Grant No. 19IRTSTHN027).

Inclusions in large diamond single crystals at different temperatures of synthesis

Fei Han(韩飞)1, Shang-Sheng Li(李尚升)1, Xue-Fei Jia(贾雪菲)1, Wei-Qin Chen(陈玮琴)1, Tai-Chao Su(宿太超)1, Mei-Hua Hu(胡美华)1, Kun-Peng Yu(于昆鹏)1, Jian-Kang Wang(王健康)1, Yu-Min Wu(吴玉敏)1, Hong-An Ma(马红安)2, Xiao-Peng Jia(贾晓鹏)2   

  1. 1 School of Materials Science and Engineering, Henan Polytechnic University, Cultivating Base for Key Laboratory of Environment-friendly Inorganic Materials in University of Henan Province, Jiaozuo 454000, China;
    2 State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
  • Received:2018-09-06 Revised:2018-11-28 Online:2019-02-05 Published:2019-02-05
  • Contact: Shang-Sheng Li E-mail:lishsh@hpu.edu.cn
  • Supported by:
    Project supported by the Natural Science Foundation of Henan Province, China (Grant No. 182300410279), the Key Science and Technology Research Project of Henan Province, China (Grant No. 182102210311), the Key Scientific Research Project in Colleges and Universities of Henan Province, China (Grant No. 18A430017), the Professional Practice Demonstration Base Program for Professional Degree Graduate in Material Engineering of Henan Polytechnic University, China (Grant No. 2016YJD03), and the Fund for the Innovative Research Team (in Science and Technology) in the University of Henan Province, China (Grant No. 19IRTSTHN027).

摘要: The inclusions in large diamond single crystals have effects on its ultimate performance, which restricts its industrial applications to a great extent. Therefore, it is necessary to study the inclusions systematically. In this paper, large diamond single crystals with different content values of inclusions are synthesized along the (100) surface by the temperature gradient method (TGM) under 5.6 GPa at different temperatures. With the synthetic temperature changing from 1200℃ to 1270℃, the shapes of diamonds change from plate to low tower, to high tower, even to steeple. From the microscopic photographs of the diamond samples, it can be observed that with the shapes of the samples changing at different temperatures, the content values of inclusions in diamonds become zero, a little, much and most, correspondingly. Consequently, with the temperature growing from low to high, the content values of inclusions in crystals increase. The origin of inclusions is explained by the difference in growth rate between diamond crystal and its surface. The content values of inclusions in diamond samples are quantitatively calculated by testing the densities of diamond samples. And the composition and inclusion content are analyzed by energy dispersive spectroscopy (EDS) and x-ray diffraction (XRD). From contrasting scanning electron microscopy (SEM) photographs, it can be found that the more the inclusions in diamond, the more imperfect the diamond surface is.

关键词: inclusions, large diamond single crystals, high pressure and high temperature

Abstract: The inclusions in large diamond single crystals have effects on its ultimate performance, which restricts its industrial applications to a great extent. Therefore, it is necessary to study the inclusions systematically. In this paper, large diamond single crystals with different content values of inclusions are synthesized along the (100) surface by the temperature gradient method (TGM) under 5.6 GPa at different temperatures. With the synthetic temperature changing from 1200℃ to 1270℃, the shapes of diamonds change from plate to low tower, to high tower, even to steeple. From the microscopic photographs of the diamond samples, it can be observed that with the shapes of the samples changing at different temperatures, the content values of inclusions in diamonds become zero, a little, much and most, correspondingly. Consequently, with the temperature growing from low to high, the content values of inclusions in crystals increase. The origin of inclusions is explained by the difference in growth rate between diamond crystal and its surface. The content values of inclusions in diamond samples are quantitatively calculated by testing the densities of diamond samples. And the composition and inclusion content are analyzed by energy dispersive spectroscopy (EDS) and x-ray diffraction (XRD). From contrasting scanning electron microscopy (SEM) photographs, it can be found that the more the inclusions in diamond, the more imperfect the diamond surface is.

Key words: inclusions, large diamond single crystals, high pressure and high temperature

中图分类号:  (Diamond)

  • 81.05.ug
61.72.S- (Impurities in crystals) 61.05.C- (X-ray diffraction and scattering) 61.72.Ff (Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))