1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor

doi:10.1088/1674-1056/28/2/027301

中国物理B ›› 2019, Vol. 28 ›› Issue (2): 27301-027301.doi: 10.1088/1674-1056/28/2/027301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor

Sheng-Lei Zhao(赵胜雷), Zhi-Zhe Wang(王之哲), Da-Zheng Chen(陈大正), Mao-Jun Wang(王茂俊), Yang Dai(戴扬), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)

1 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China;
3 Institute of Microelectronics, Peking University, Beijing 100871, China;
4 School of Information Science and Technology, Northwest University, Xi'an 710127, China

收稿日期:2018-09-05 修回日期:2018-11-27 出版日期:2019-02-05 发布日期:2019-02-05
通讯作者: Jin-Cheng Zhang E-mail:jchzhang@xidian.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400100), the National Natural Science Foundation of China (Grant Nos. 11435010, 61474086, and 61804125), and the Natural Science Basic Research Program of Shaanxi Province, China (Grant No. 2016ZDJC-02).

1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor

Sheng-Lei Zhao(赵胜雷)¹, Zhi-Zhe Wang(王之哲)², Da-Zheng Chen(陈大正)¹, Mao-Jun Wang(王茂俊)³, Yang Dai(戴扬)⁴, Xiao-Hua Ma(马晓华)¹, Jin-Cheng Zhang(张进成)¹, Yue Hao(郝跃)¹

1 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China;
3 Institute of Microelectronics, Peking University, Beijing 100871, China;
4 School of Information Science and Technology, Northwest University, Xi'an 710127, China

Received:2018-09-05 Revised:2018-11-27 Online:2019-02-05 Published:2019-02-05
Contact: Jin-Cheng Zhang E-mail:jchzhang@xidian.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400100), the National Natural Science Foundation of China (Grant Nos. 11435010, 61474086, and 61804125), and the Natural Science Basic Research Program of Shaanxi Province, China (Grant No. 2016ZDJC-02).

摘要/Abstract

摘要： In this paper, we present a 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor (DH HEMT) with a gate-drain spacing L_GD=18.8 μm. Compared with the regular DH HEMT, our circular structure has a high average breakdown electric-field strength that increases from 0.42 MV/cm to 0.96 MV/cm. The power figure of merit V_BR²/R_ON for the circular HEMT is as high as 1.03×10⁹ V₂·Ω^-1·cm^-2. The divergence of electric field lines at the gate edge and no edge effect account for the breakdown enhancement capability of the circular structure. Experiments and analysis indicate that the circular structure is an effective method to modulate the electric field.

关键词: AlGaN/GaN/AlGaN DH HEMTs, circular structure, breakdown voltage

Abstract: In this paper, we present a 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor (DH HEMT) with a gate-drain spacing L_GD=18.8 μm. Compared with the regular DH HEMT, our circular structure has a high average breakdown electric-field strength that increases from 0.42 MV/cm to 0.96 MV/cm. The power figure of merit V_BR²/R_ON for the circular HEMT is as high as 1.03×10⁹ V₂·Ω^-1·cm^-2. The divergence of electric field lines at the gate edge and no edge effect account for the breakdown enhancement capability of the circular structure. Experiments and analysis indicate that the circular structure is an effective method to modulate the electric field.

Key words: AlGaN/GaN/AlGaN DH HEMTs, circular structure, breakdown voltage

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

73.61.Ey (III-V semiconductors) 78.30.Fs (III-V and II-VI semiconductors)

赵胜雷, 王之哲, 陈大正, 王茂俊, 戴扬, 马晓华, 张进成, 郝跃. 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor[J]. 中国物理B, 2019, 28(2): 27301-027301.

Sheng-Lei Zhao(赵胜雷), Zhi-Zhe Wang(王之哲), Da-Zheng Chen(陈大正), Mao-Jun Wang(王茂俊), Yang Dai(戴扬), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃). 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor[J]. Chin. Phys. B, 2019, 28(2): 27301-027301.

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1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor

1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor

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