Structural and electrical properties of reactive magnetron sputtered yttrium-doped HfO2 films

doi:10.1088/1674-1056/27/4/048103

中国物理B ›› 2018, Vol. 27 ›› Issue (4): 48103-048103.doi: 10.1088/1674-1056/27/4/048103

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Structural and electrical properties of reactive magnetron sputtered yttrium-doped HfO₂ films

Yu Zhang(张昱), Jun Xu(徐军), Da-Yu Zhou(周大雨), Hang-Hang Wang(王行行), Wen-Qi Lu(陆文琪), Chi-Kyu Choi

1. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, School of Physics, Dalian University of Technology, Dalian 116024, China;
2. School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China;
3. Department of Physics, Jeju National University, Jeju 63243, Korea

收稿日期:2017-12-01 修回日期:2018-01-12 出版日期:2018-04-05 发布日期:2018-04-05
通讯作者: Jun Xu E-mail:xujun@dlut.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51272034 and 51672032) and the Fundamental Research Funds for the Central Universities, China (Grant No. DUT17ZD211).

Structural and electrical properties of reactive magnetron sputtered yttrium-doped HfO₂ films

Yu Zhang(张昱)¹, Jun Xu(徐军)¹, Da-Yu Zhou(周大雨)², Hang-Hang Wang(王行行)¹, Wen-Qi Lu(陆文琪)¹, Chi-Kyu Choi³

1. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, School of Physics, Dalian University of Technology, Dalian 116024, China;
2. School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China;
3. Department of Physics, Jeju National University, Jeju 63243, Korea

Received:2017-12-01 Revised:2018-01-12 Online:2018-04-05 Published:2018-04-05
Contact: Jun Xu E-mail:xujun@dlut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51272034 and 51672032) and the Fundamental Research Funds for the Central Universities, China (Grant No. DUT17ZD211).

摘要/Abstract

摘要：

Hafnium oxide thin films doped with different concentrations of yttrium are prepared on Si (100) substrates at room temperature using a reactive magnetron sputtering system. The effects of Y content on the bonding structure, crystallographic structure, and electrical properties of Y-doped HfO₂ films are investigated. The x-ray photoelectron spectrum (XPS) indicates that the core level peak positions of Hf 4f and O 1s shift toward lower energy due to the structure change after Y doping. The depth profiling of XPS shows that the surface of the film is completely oxidized while the oxygen deficiency emerges after the stripping depths have increased. The x-ray diffraction and high resolution transmission electron microscopy (HRTEM) analyses reveal the evolution from monoclinic HfO₂ phase towards stabilized cubic HfO₂ phase and the preferred orientation of (111) appears with increasing Y content, while pure HfO₂ shows the monoclinic phase only. The leakage current and permittivity are determined as a function of the Y content. The best combination of low leakage current of 10^-7 A/cm² at 1 V and a highest permittivity value of 29 is achieved when the doping ratio of Y increases to 9 mol%. A correlation among Y content, phase evolution and electrical properties of Y-doped HfO₂ ultra-thin film is investigated.

关键词: Y-doped HfO₂, ultra-thin film, high-k, x-ray photoelectron spectrum

Abstract:

Key words: Y-doped HfO₂, ultra-thin film, high-k, x-ray photoelectron spectrum

中图分类号: (Deposition by sputtering)

81.15.Cd

77.55.df (For silicon electronics) 68.55.-a (Thin film structure and morphology) 82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))

张昱, 徐军, 周大雨, 王行行, 陆文琪, Chi-Kyu Choi. Structural and electrical properties of reactive magnetron sputtered yttrium-doped HfO₂ films[J]. 中国物理B, 2018, 27(4): 48103-048103.

Yu Zhang(张昱), Jun Xu(徐军), Da-Yu Zhou(周大雨), Hang-Hang Wang(王行行), Wen-Qi Lu(陆文琪), Chi-Kyu Choi. Structural and electrical properties of reactive magnetron sputtered yttrium-doped HfO₂ films[J]. Chin. Phys. B, 2018, 27(4): 48103-048103.

参考文献 29

[1]	Kingon A I Maria J P and Streiffer S K 2000 Nature 406 1032
[2]	Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
[3]	Green M L, Gusev E P, Degraeve R and Garfunkel E 2001 J. Appl. Phys. Rev. 90 2057
[4]	Gaymax M, Van S E, Houssa M, Delabie A, Conard T, Meuris M, Heyns M M, Dimoulas A, Spiga S, Fanciulli M, Seo J W and Goncharova L V 2006 Mater. Sci. Eng. B 135 256
[5]	Lee B H, Kang L, Qi W J, Nieh R, Jeon Y, Onishi K and Lee J C 1999 Tech. Dig. IDEM 99 133
[6]	Robertson 2000 J. Vac. Sci. Technol. B 18 1785
[7]	Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
[8]	Torchio P, Gatto A, Alvisi M, Albrand G, Kaiser N and Amra C 2002 Appl. Opt. 41 3256
[9]	Miyata N, Yasuda T and Abe Y 2010 J. Appl. Phys. 107 103536
[10]	Cho J, Nguyen V, Ritcher C A, Ehrstein R, Lee B H and Lee J C 2002 Appl. Phys. Lett. 80 1249
[11]	Hsieh C R, Chen Y Y and Lou J C 2010 Appl. Phys. Lett. 96 022905
[12]	Villanueva-lbańez M, Luyer L C, Parola S, Matry O and Mugnier Mugnier J 2003 Rev. Adv. Mater. Sci. 5 296
[13]	Ferrari S, Modreanu M, Scarel G and Fancinelli M 2004 Thin Solid Films 450 124
[14]	Tang J, Zhang F, Zoogman P, Fabbri J, Chan S W, Zhu Y, Brus L E and Steigerwald M L 2005 Adv. Funct. Mater. 15 1595
[15]	Noor-a-Alam M, Abhilash K and Ramana C V 2012 Thin Solid Films 520 6631
[16]	Kita K, Kyuno K and Toriumi A 2005 Appl. Phys. Lett. 86 102906
[17]	Xie Y, Ma Z, Su Y, Liu Y, Liu L, Zhao H, Zhou J, Zhang Z, Li J and Xie E 2011 J. Mater. Res. 26 50
[18]	Frandons J, Broussrau B and Pradal F 1980 Phys. Stat. Sol. B 98 379
[19]	Han Kai, Wang Xiao-Lei, Yang Hong and Wang Wen-Wu 2013 Chin. Phys. B 22 117701
[20]	Meng Yong-Qiang, Liu Zheng-Tang, Feng Li-Ping and Cheng Shuai 2014 Chin. Phys. Lett. 31 077702
[21]	Ma X L, Yang H, Xiang J J, Wang X L, Wang W W, Zhang J Q, Yin H X, Zhu H L and Zhao C 2017 Chin. Phys. B 26 027701
[22]	Kadlec F and Simon P 2000 Mater. Sci. Eng. B 72 56
[23]	Duwez P, Brown F H and Odell F 1951 J. Electrochem. Soc. 98 356
[24]	Chen X Y, Song L X, You L J and Zhao L L 2013 Appl. Surf. Sci. 271 248
[25]	Wong H, Zhan N, Ng K L, Poon M C and Kok C W 2004 Thin Solid Films 462-463 96
[26]	Tan R, Azuma Y and Kojima I 2005 Appl. Surf. Sci. 241 135
[27]	Lee C K, Cho E, Lee H S, Hwang C S and Han S 2008 Phys. Rev. B 78 012102
[28]	Takeuchi H, Ha D and King T J 2004 J. Vac. Sci. Technol. A 22 1337
[29]	Chen G H, Hou Z F, Gong X G and Li Q 2008 J. Appl. Phys. 104 074101

Structural and electrical properties of reactive magnetron sputtered yttrium-doped HfO₂ films

Structural and electrical properties of reactive magnetron sputtered yttrium-doped HfO₂ films

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