中国物理B ›› 2018, Vol. 27 ›› Issue (4): 47307-047307.doi: 10.1088/1674-1056/27/4/047307

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs

Ting-Ting Liu(刘婷婷), Kai Zhang(张凯), Guang-Run Zhu(朱广润), Jian-Jun Zhou(周建军), Yue-Chan Kong(孔月婵), Xin-Xin Yu(郁鑫鑫), Tang-Sheng Chen(陈堂胜)   

  1. 1. Research Institution, China Electronic Equipment & System Engineering Company, Beijing 100039, China;
    2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China
  • 收稿日期:2017-11-12 修回日期:2018-01-02 出版日期:2018-04-05 发布日期:2018-04-05
  • 通讯作者: Kai Zhang E-mail:haigui.34@163.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61504125, 61474101, and 61505181).

Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs

Ting-Ting Liu(刘婷婷)1, Kai Zhang(张凯)2, Guang-Run Zhu(朱广润)2, Jian-Jun Zhou(周建军)2, Yue-Chan Kong(孔月婵)2, Xin-Xin Yu(郁鑫鑫)2, Tang-Sheng Chen(陈堂胜)2   

  1. 1. Research Institution, China Electronic Equipment & System Engineering Company, Beijing 100039, China;
    2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China
  • Received:2017-11-12 Revised:2018-01-02 Online:2018-04-05 Published:2018-04-05
  • Contact: Kai Zhang E-mail:haigui.34@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61504125, 61474101, and 61505181).

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摘要： We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET. It is found that the FinFET with scaled fin dimensions exhibits much flatter Gm characteristics than the one with long fins as well as planar HEMT. According to the comparative study, we provide direct proof that source resistance rather than tri-gate structure itself dominates the Gm behavior. Furthermore, power measurements show that the optimized FinFET is capable of delivering a much higher output power density along with significant improvement in linearity characteristics than conventional planar HEMT. This study also highlights the importance of fin design in GaN-based FinFET for microwave power application, especially high-linearity applications.

关键词: AlGaN/GaNFinFETs, output power density, linearity characteristics

Abstract: We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET. It is found that the FinFET with scaled fin dimensions exhibits much flatter Gm characteristics than the one with long fins as well as planar HEMT. According to the comparative study, we provide direct proof that source resistance rather than tri-gate structure itself dominates the Gm behavior. Furthermore, power measurements show that the optimized FinFET is capable of delivering a much higher output power density along with significant improvement in linearity characteristics than conventional planar HEMT. This study also highlights the importance of fin design in GaN-based FinFET for microwave power application, especially high-linearity applications.

Key words: AlGaN/GaNFinFETs, output power density, linearity characteristics

中图分类号:  (III-V semiconductors)

  • 73.61.Ey
52.77.Bn (Etching and cleaning) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))