Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions

doi:10.1088/1674-1056/27/4/047305

中国物理B ›› 2018, Vol. 27 ›› Issue (4): 47305-047305.doi: 10.1088/1674-1056/27/4/047305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions

1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2. School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China

收稿日期:2017-12-21 修回日期:2018-02-08 出版日期:2018-04-05 发布日期:2018-04-05
通讯作者: Xiao-Fei Wang E-mail:mxfwang@xjtu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574112, 61334002, 61474091, and 61574110) and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 605119425012).

Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions

Wei Mao(毛维)¹, Hai-Yong Wang(王海永)¹, Peng-Hao Shi(石朋毫)¹, Xiao-Fei Wang(王晓飞)², Ming Du(杜鸣)¹, Xue-Feng Zheng(郑雪峰)¹, Chong Wang(王冲)¹, Xiao-Hua Ma(马晓华)¹, Jin-Cheng Zhang(张进成)¹, Yue Hao(郝跃)¹

1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2. School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China

Received:2017-12-21 Revised:2018-02-08 Online:2018-04-05 Published:2018-04-05
Contact: Xiao-Fei Wang E-mail:mxfwang@xjtu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574112, 61334002, 61474091, and 61574110) and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 605119425012).

摘要/Abstract

摘要： A novel GaN-based vertical heterostructure field effect transistor (HFET) with nonuniform doping superjunctions (non-SJ HFET) is proposed and studied by Silvaco-ATLAS, for minimizing the specific on-resistance (R_onA) at no expense of breakdown voltage (BV). The feature of non-SJ HFET lies in the nonuniform doping concentration from top to bottom in the n-and p-pillars, which is different from that of the conventional GaN-based vertical HFET with uniform doping superjunctions (un-SJ HFET). A physically intrinsic mechanism for the nonuniform doping superjunction (non-SJ) to further reduce R_onA at no expense of BV is investigated and revealed in detail. The design, related to the structure parameters of non-SJ, is optimized to minimize the R_onA on the basis of the same BV as that of un-SJ HFET. Optimized simulation results show that the reduction in R_onA depends on the doping concentrations and thickness values of the light and heavy doping parts in non-SJ. The maximum reduction of more than 51% in R_onA could be achieved with a BV of 1890 V. These results could demonstrate the superiority of non-SJ HFET in minimizing R_onA and provide a useful reference for further developing the GaN-based vertical HFETs.

关键词: GaN-based vertical HFETs, nonuniform doping superjunctions, minimized specific on-resistance, breakdown voltage

Abstract: A novel GaN-based vertical heterostructure field effect transistor (HFET) with nonuniform doping superjunctions (non-SJ HFET) is proposed and studied by Silvaco-ATLAS, for minimizing the specific on-resistance (R_onA) at no expense of breakdown voltage (BV). The feature of non-SJ HFET lies in the nonuniform doping concentration from top to bottom in the n-and p-pillars, which is different from that of the conventional GaN-based vertical HFET with uniform doping superjunctions (un-SJ HFET). A physically intrinsic mechanism for the nonuniform doping superjunction (non-SJ) to further reduce R_onA at no expense of BV is investigated and revealed in detail. The design, related to the structure parameters of non-SJ, is optimized to minimize the R_onA on the basis of the same BV as that of un-SJ HFET. Optimized simulation results show that the reduction in R_onA depends on the doping concentrations and thickness values of the light and heavy doping parts in non-SJ. The maximum reduction of more than 51% in R_onA could be achieved with a BV of 1890 V. These results could demonstrate the superiority of non-SJ HFET in minimizing R_onA and provide a useful reference for further developing the GaN-based vertical HFETs.

Key words: GaN-based vertical HFETs, nonuniform doping superjunctions, minimized specific on-resistance, breakdown voltage

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)

毛维, 王海永, 石朋毫, 王晓飞, 杜鸣, 郑雪峰, 王冲, 马晓华, 张进成, 郝跃. Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions[J]. 中国物理B, 2018, 27(4): 47305-047305.

Wei Mao(毛维), Hai-Yong Wang(王海永), Peng-Hao Shi(石朋毫), Xiao-Fei Wang(王晓飞), Ming Du(杜鸣), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃). Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions[J]. Chin. Phys. B, 2018, 27(4): 47305-047305.

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Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions

Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions

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