中国物理B ›› 2018, Vol. 27 ›› Issue (1): 18502-018502.doi: 10.1088/1674-1056/27/1/018502
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation
Chen Wang(王尘), Yihong Xu(许怡红), Cheng Li(李成), Haijun Lin(林海军)
- 1 Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opto-electronic and Communiction Engineering, Xiamen University of Technology, Xiamen 361024, China;
2 Xiamen Institute of Technology, Xiamen 361024, China;
3 Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
Improved performance of Ge n+/p diode by combining laser annealing and epitaxial Si passivation
Chen Wang(王尘)1, Yihong Xu(许怡红)2, Cheng Li(李成)3, Haijun Lin(林海军)1
- 1 Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opto-electronic and Communiction Engineering, Xiamen University of Technology, Xiamen 361024, China;
2 Xiamen Institute of Technology, Xiamen 361024, China;
3 Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
摘要： A method to improve Ge n+/p junction diode performance by excimer laser annealing (ELA) and epitaxial Si passivation under a low ion implantation dose is demonstrated. The epitaxial Si passivation layer can unpin the Fermi level of the contact of Al/n-Ge to some extent and reduce the contact resistance. In addition, the fabricated Ge n+/p junction diode by ELA plus epitaxial Si passivation exhibits a decreased reverse current density and an increased forward current density, resulting in a rectification ratio of about 6.5×106 beyond two orders magnitude larger than that by ELA alone. The reduced specific contact resistivity of metal on n-doped germanium and well-behaved germanium n+/p diode are beneficial for the performance improvement of Ge n-MOSFETs and other opto-electronic devices.
中图分类号: (Junction diodes)
- 85.30.Kk