Voltage-controlled Kosterlitz-Thouless transitions and various kinds of Kondo behaviors in a triple dot device

doi:10.1088/1674-1056/26/9/097102

中国物理B ›› 2017, Vol. 26 ›› Issue (9): 97102-097102.doi: 10.1088/1674-1056/26/9/097102

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Voltage-controlled Kosterlitz-Thouless transitions and various kinds of Kondo behaviors in a triple dot device

Yong-Chen Xiong(熊永臣), Jun Zhang(张俊), Wang-Huai Zhou(周望怀), Amel Laref

1 School of Science, and Advanced Functional Material and Photoelectric Technology Research Institution, Hubei University of Automotive Technology, Shiyan 442002, China;
2 Department of Physics, Faculty of Science, National University of Singapore, Singapore 117551, Singapore;
3 Department of Physics and Astronomy, Science Faculty, King Saud University, Riyadh 11451, Saudi Arabia

收稿日期:2017-05-02 出版日期:2017-09-05 发布日期:2017-09-05
通讯作者: Yong-Chen Xiong E-mail:xiongyc_lx@huat.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11504102), the Scientific Research Items Foundation of Hubei Educational Committee, China (Grant Nos. Q20161803 and B2016091), the Doctoral Scientific Research Foundation (Grant No. BK201407), and the Major Scientific Research Project Pre-funds of Hubei University of Automotive Technology, China (Grant No. 2014XY06).

Voltage-controlled Kosterlitz-Thouless transitions and various kinds of Kondo behaviors in a triple dot device

Yong-Chen Xiong(熊永臣)^1,2, Jun Zhang(张俊)¹, Wang-Huai Zhou(周望怀)¹, Amel Laref^1,3

1 School of Science, and Advanced Functional Material and Photoelectric Technology Research Institution, Hubei University of Automotive Technology, Shiyan 442002, China;
2 Department of Physics, Faculty of Science, National University of Singapore, Singapore 117551, Singapore;
3 Department of Physics and Astronomy, Science Faculty, King Saud University, Riyadh 11451, Saudi Arabia

Received:2017-05-02 Online:2017-09-05 Published:2017-09-05
Contact: Yong-Chen Xiong E-mail:xiongyc_lx@huat.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11504102), the Scientific Research Items Foundation of Hubei Educational Committee, China (Grant Nos. Q20161803 and B2016091), the Doctoral Scientific Research Foundation (Grant No. BK201407), and the Major Scientific Research Project Pre-funds of Hubei University of Automotive Technology, China (Grant No. 2014XY06).

摘要/Abstract

摘要：

The transport property and phase transition for a parallel triple dot device are studied by adopting Wilson's numerical renormalization group technique, focusing on the effects of level spacings between neighboring dot sites. By keeping dot 2 at the half-filled level and tuning the level differences, it is demonstrated that the system transits from local spin quadruplet to triplet and doublet sequently, and three kinds of Kondo peaks at the Fermi surface could be found, which are separated by two Kosterlitz-Thouless type quantum phase transitions and correspond to spin-3/2, spin-1, and spin-1/2 Kondo effect, respectively. To obtain a detailed understanding of these problems, the charge occupation, the spin-spin correlation, the transmission coefficient, and the temperature-dependent magnetic moment are shown, and necessary physical arguments are given.

关键词: triple quantum dot, Kosterlitz-Thouless transition, Kondo effect, critical phenomena

Abstract:

Key words: triple quantum dot, Kosterlitz-Thouless transition, Kondo effect, critical phenomena

中图分类号: (Strongly correlated electron systems; heavy fermions)

71.27.+a

73.63.-b (Electronic transport in nanoscale materials and structures) 85.35.-p (Nanoelectronic devices) 73.21.-b (Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)

熊永臣, 张俊, 周望怀. Voltage-controlled Kosterlitz-Thouless transitions and various kinds of Kondo behaviors in a triple dot device[J]. 中国物理B, 2017, 26(9): 97102-097102.

Yong-Chen Xiong(熊永臣), Jun Zhang(张俊), Wang-Huai Zhou(周望怀), Amel Laref. Voltage-controlled Kosterlitz-Thouless transitions and various kinds of Kondo behaviors in a triple dot device[J]. Chin. Phys. B, 2017, 26(9): 97102-097102.

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Voltage-controlled Kosterlitz-Thouless transitions and various kinds of Kondo behaviors in a triple dot device

Voltage-controlled Kosterlitz-Thouless transitions and various kinds of Kondo behaviors in a triple dot device

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