Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

doi:10.1088/1674-1056/26/8/087501

中国物理B ›› 2017, Vol. 26 ›› Issue (8): 87501-087501.doi: 10.1088/1674-1056/26/8/087501

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

Yan Cui(崔岩), Ling Yang(杨玲), Teng Gao(高腾), Bo Li(李博), Jia-Jun Luo(罗家俊)

1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 Key Laboratory of Silicon Device and Technology, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2017-03-10 修回日期:2017-04-13 出版日期:2017-08-05 发布日期:2017-08-05
通讯作者: Jia-Jun Luo E-mail:luojj@ime.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61404161).

Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

Yan Cui(崔岩)^1,2, Ling Yang(杨玲)^1,2, Teng Gao(高腾)^1,2, Bo Li(李博)^1,2, Jia-Jun Luo(罗家俊)^1,2

1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 Key Laboratory of Silicon Device and Technology, Chinese Academy of Sciences, Beijing 100029, China

Received:2017-03-10 Revised:2017-04-13 Online:2017-08-05 Published:2017-08-05
Contact: Jia-Jun Luo E-mail:luojj@ime.ac.cn
About author:0.1088/1674-1056/26/8/
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61404161).

摘要/Abstract

摘要：

The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories (MRAMs) with 0.13 μm and 0.18-μm complementary metal-oxide-semiconductor (CMOS) process respectively and different magnetic tunneling junctions (MTJs) are irradiated with a Cobalt-60 gamma source. The electrical functions of devices during the irradiation and the room temperature annealing behavior are measured. Electrical failures are observed until the dose accumulates to 120-krad (Si) in 4-Mb MRAM while the 1-Mb MRAM keeps normal. Thus, the 0.13-μm process circuit exhibits better radiation tolerance than the 0.18-μm process circuit. However, a small quantity of read bit-errors randomly occurs only in 1-Mb MRAM during the irradiation while their electrical function is normal. It indicates that the store states of MTJ may be influenced by gamma radiation, although the electrical transport and magnetic properties are inherently immune to the radiation. We propose that the magnetic Compton scattering in the interaction of gamma ray with magnetic free layer may be the origin of the read bit-errors. Our results are useful for MRAM toward space application.

关键词: magnetoresistive random-access memories, total ionizing dose effect, magnetic tunneling junction, magnetic Compton scattering effect

Abstract:

Key words: magnetoresistive random-access memories, total ionizing dose effect, magnetic tunneling junction, magnetic Compton scattering effect

中图分类号: (Magnetotransport phenomena; materials for magnetotransport)

75.47.-m

61.80.Ed (γ-ray effects) 33.57.+c (Magneto-optical and electro-optical spectra and effects)

崔岩, 杨玲, 高腾, 李博, 罗家俊. Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices[J]. 中国物理B, 2017, 26(8): 87501-087501.

Yan Cui(崔岩), Ling Yang(杨玲), Teng Gao(高腾), Bo Li(李博), Jia-Jun Luo(罗家俊). Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices[J]. Chin. Phys. B, 2017, 26(8): 87501-087501.

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Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

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