中国物理B ›› 2017, Vol. 26 ›› Issue (12): 127102-127102.doi: 10.1088/1674-1056/26/12/127102
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
Peng Cui(崔鹏), Zhao-Jun Lin(林兆军), Chen Fu(付晨), Yan Liu(刘艳), Yuan-Jie Lv(吕元杰)
- 1. School of Microelectronics, Shandong University, Jinan 250100, China;
2. National Key Laboratory of Application Specific Integrated Circuit(ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
Peng Cui(崔鹏)1, Zhao-Jun Lin(林兆军)1, Chen Fu(付晨)1, Yan Liu(刘艳)1, Yuan-Jie Lv(吕元杰)2
- 1. School of Microelectronics, Shandong University, Jinan 250100, China;
2. National Key Laboratory of Application Specific Integrated Circuit(ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
摘要： AlGaN/GaN heterostructure field-effect transistors (HFETs) with different floating gate lengths and floating gates annealed at different temperatures, are fabricated. Using the measured capacitance-voltage curves of the gate Shottky contacts for the AlGaN/GaN HFETs, we find that after floating gate experiences 600℃ rapid thermal annealing, the larger the floating gate length, the larger the two-dimensional electron gas electron density under the gate region is. Based on the measured capacitance-voltage and current-voltage curves, the strain of the AlGaN barrier layer in the gate region is calculated, which proves that the increased electron density originates from the increased strain of the AlGaN barrier layer.
中图分类号: (III-V semiconductors)
- 71.55.Eq