Ce–Co-doped BiFeO3 multiferroic for optoelectronic and photovoltaic applications

doi:10.1088/1674-1056/26/11/116201

中国物理B ›› 2017, Vol. 26 ›› Issue (11): 116201-116201.doi: 10.1088/1674-1056/26/11/116201

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Ce–Co-doped BiFeO₃ multiferroic for optoelectronic and photovoltaic applications

Jyoti Sharma, Deepak Basrai, A K Srivastava

Department of Physics, Lovely Professional University, Phagwara, Punjab, India

收稿日期:2017-05-21 修回日期:2017-07-06 出版日期:2017-11-05 发布日期:2017-11-05

Ce–Co-doped BiFeO₃ multiferroic for optoelectronic and photovoltaic applications

Jyoti Sharma, Deepak Basrai, A K Srivastava

Department of Physics, Lovely Professional University, Phagwara, Punjab, India

Received:2017-05-21 Revised:2017-07-06 Online:2017-11-05 Published:2017-11-05
Contact: A K Srivastava E-mail:srivastava_phy@yahoo.co.in

摘要/Abstract

摘要： The Ce-Co-doped BiFeO₃ multiferroic, Bi_1-xCe_xFe_1-xCo_xO₃ (x=0.00, 0.01, 0.03, and 0.05), has been prepared by a sol-gel auto-combustion method and analyzed through Raman spectroscopy, photoluminescence, and UV-visible spectroscopy. We have observed an anomalous intensity of the second-order Raman mode at~1260 cm^-1 in pure BFO and suppressed intensity in doped samples, which indicates the presence of spin two-phonon coupling in these samples. The photoluminescence spectra show reduction in the intensity of emission with the increasing dopant concentration, which indicates the high charge separation efficiency. A sharp absorption with three charge transfer (C-T) and two d-d transitions are shown by UV-visible spectra in the visible region. The band gap of BiFeO₃ (BFO) is decreasing with increasing dopant concentrations and the materials are suitable for photovoltaic applications.

关键词: Raman and UV-visible spectroscopy, photoluminescence and photo-voltaic applications

Abstract: The Ce-Co-doped BiFeO₃ multiferroic, Bi_1-xCe_xFe_1-xCo_xO₃ (x=0.00, 0.01, 0.03, and 0.05), has been prepared by a sol-gel auto-combustion method and analyzed through Raman spectroscopy, photoluminescence, and UV-visible spectroscopy. We have observed an anomalous intensity of the second-order Raman mode at~1260 cm^-1 in pure BFO and suppressed intensity in doped samples, which indicates the presence of spin two-phonon coupling in these samples. The photoluminescence spectra show reduction in the intensity of emission with the increasing dopant concentration, which indicates the high charge separation efficiency. A sharp absorption with three charge transfer (C-T) and two d-d transitions are shown by UV-visible spectra in the visible region. The band gap of BiFeO₃ (BFO) is decreasing with increasing dopant concentrations and the materials are suitable for photovoltaic applications.

Key words: Raman and UV-visible spectroscopy, photoluminescence and photo-voltaic applications

中图分类号: (Structural classes of nanoscale systems)

62.23.-c

74.25.nd (Raman and optical spectroscopy) 78.55.-m (Photoluminescence, properties and materials)

Jyoti Sharma,Deepak Basrai,A K Srivastava. Ce–Co-doped BiFeO₃ multiferroic for optoelectronic and photovoltaic applications[J]. 中国物理B, 2017, 26(11): 116201-116201.

Jyoti Sharma, Deepak Basrai, A K Srivastava. Ce–Co-doped BiFeO₃ multiferroic for optoelectronic and photovoltaic applications[J]. Chin. Phys. B, 2017, 26(11): 116201-116201.

参考文献 54

[1]	Kieliba T, Bau S, Schober R, O ß wald D, Reber S, Eyerand A and Willeke G 2002 Sol. Energy Mater. Sol. Cells 74 261
[2]	Xu S, Qiu J, Jia T, Li C, Sun H and Xu Z 2007 Opt. Commun. 274 163
[3]	Kalyanasundaram K and Gratzel M 1998 Coord. Chem. Rev. 177 347
[4]	Cavenett B C, Prior K A and Wang S Y 1993 Mater. Sci. Eng. B 21 205
[5]	Catalan G and Scott J F 2009 Adv. Mater. 21 2463
[6]	Ji W, Yao K, Lim Y F, Liang Y C and Suwardi A 2013 Appl. Phys. Lett. 103 062901
[7]	Gao B F, Chen X Y, Yin K B, Dong S, Ren Z F, Yuan F, Yu T, Zou Z G and Liu J M 2007 Adv. Mater. 19 2889
[8]	Li S, Lin Y H, Zhang B P, Wang Y and Nan C W 2010 J. Phys. Chem. C 114 2903
[9]	Grinberg I, West D V, Torres M, Gou G Y, Stein D M, Wu L Y, Chen G, Gallo E M, Akbashev A R, Davies P K, Spanier J E and Rappe A M 2013 Nature 503 509
[10]	Mohan S, Subramanian B, Bhaumik I, Gupta P K and Jaisankar S N 2014 RSC Adv. 4 16871
[11]	Wu S X, Fang J Z, Xu X X, Liu Z, Zhu X M and Xu W C 2012 Photochem. Photobiol. 88 1205
[12]	Sakar M, Balakumar S, Saravanan P and Bharathkumar S 2015 Nanoscale 7 10667
[13]	Zhang N, Chen D, Niu F, Wang S, Qin L S and Huang Y X 2016 Sci. Rep. 6 26467
[14]	Pattanayak S, Chaudhary R N P and Das P R 2014 Mater. Lett. 10 165
[15]	Sharma J, Bhat B H, Kumar A, Kumar S, Kaur T, Want B and Srivastava A K 2017 Materials Research Express 4 036104
[16]	Yuan G L, Or S W, Chan H L W and Liu Z G 2007 J. Appl. Phys. 101 024106
[17]	Yuan G L, Or S W and Chan H L W 2007 J. Phys. D 40 1196
[18]	Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanathan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wuttig M and Ramesh R 2003 Science 299 1719
[19]	Singh S K, Ishiwara H and Maruyama K 2006 Appl. Phys. Lett. 88 262908
[20]	Hermet P, Goffinet M, Kreisel J and Ghosez Ph 2007 Phys. Rev. B 75 220102
[21]	Chen P, Xu X, Koenigsmann C, Santulli A C, Wong S S and Musfeldt J L 2010 Nano Lett. 10 4526
[22]	Porporati A A, Tsuji K, Valant M, Axelsson A K and Pezzotti G 2010 J. Raman Spect. 41 84
[23]	Bielecki J, Svedlindh P, Tibebu D T, Cai S, Eriksson S G, Borjesson L and Knee C S 2012 Phy. Rev. B 86 184422
[24]	Suo L, Fang Z and Chen L 2016 Chin. Phys. B 25 016101
[25]	Zhang J, Zhang D M, Zhang Q L and Yin S T 2016 Chin. Phys. B 25 037802
[26]	Cao Y N, Wang G S, Tan T, Cai T D, Liu K, Wang L, Zhu G D and Mei J X 2016 Chin. Phys. B 25 107403
[27]	Wang C, Wu H L, Song Y F, He X, Yang Y Q and Tan D W 2016 Chin. Phys. B 25 114210
[28]	Zhou H, Gu Q, Liu B, Zhu L, Zhang L, Zhang F, Xu X, Wang Z, Sun X, Zhao X and Zhang Q 2015 Acta Phys. Sin. 64 098101(in Chinese)
[29]	Zhang S 2006 Physics 35 103
[30]	Porporati A A, Tsuji K, Valant M, Axelsson A K and Pezzottia G J 2010 Raman Spectrosc. 41 84
[31]	Yang Y, Chen Y, Liu Y, Rui Y, Cao F, Yang A, Zu C and Yang Z 2016 Acta Phys. Sin. 65 127801(in Chinese)
[32]	Yan F D, Da W H, Yong S W, Hai T X and Zhe G 2016 Acta Phys. Sin. 65 128101(in Chinese)
[33]	Gui Q Y, Zhao N and Qiang Y 2007 Chin. Phys. Lett. 24 3532
[34]	Yue W, Yuan W, Jian L, Hong W and Xiong H 2008 Chin. Phys. Lett. 25 3693
[35]	Mei G, Feng Z, Jing L and Hui S 2009 Chin. Phys. Lett. 26 088105
[36]	Hlinka J, Pokorny J, Karimi S and Reaney I M 2011 Phys. Rev. B 83 020101
[37]	Ramirez M O, Krishnamurthi M, Denev S, Kumar A, Yang S Y, Chu Y H, Saiz E, Seidel J, Pyatakov A P, Bush A, Viehland D, Orenstein J, Ramesh R and Gopalan V 2008 Appl. Phys. Lett. 92 022511
[38]	Tauc J 1974 Amorphous and Liquid Semiconductors (New York:Plenum Press)
[39]	Liu Y, Zuo R and Qi S 2013 J. Mol. Catal. A:Chem. 376 1
[40]	Mohan S, Subramanian B and Sarveswaran G 2014 J. Mater. Chem. C 2 6835
[41]	Cheng W, Li F, Shu Z, Yue Y, Ding Z and Xiu S 2011 Chin. Phys. Lett. 28 110701
[42]	Yue W, Yuan W, Jian L, Hong W and Xiong H 2008 Chin. Phys. Lett. 25 3693
[43]	Mei G, Feng Z, Jing L and Hui S 2009 Chin. Phys. Lett. 26 088105
[44]	Min C and An J 2011 Chin. Phys. Lett. 28 077701
[45]	Rosnan R M, Othaman Z, Hussin R, Ati A A, Samavati A, Dabagh S and Zare S 2016 Chin. Phys. B 25 047501
[46]	Pisarev R V, Moskvin A S, Kalashnikov A M and Rasing Th 2009 Phys. Rev. B 79 235128
[47]	Xu X S, Brinzari T V, Lee S, Chu Y H, Martin L W, Kumar A, McGill S, Rai R C, Ramesh R, Gopalan V, Cheong S W and Musfeldt J L 2009 Phy. Rev. B 79 134425
[48]	Chen P, Podraza N J, Xu X S, Melville A, Vlahos E, Gopalan V, Ramesh R, Schlom D G and Musfeldt J L 2010 Appl. Phys. Lett. 96 131907
[49]	Chen P, Xu X, Koenigsmann C, Santulli A C, Wong S S and Musfeldt J L 2010 Nano Lett. 10 4526
[50]	Yao Y, Li G H, Ciston S, Lueptow R M and Gray K A 2008 Environ. Sci. Technol. 42 4952
[51]	Zhang N, Chen D, Niu F, Wang S, Qin L and Huang Y 2016 Sci. Rep. 6 26467
[52]	Chaturvedi S, Das R, Poddar P and Kulkarni S 2015 RSC Adv. 5 23563
[53]	Lei Y, Zhang L D, Meng G W, Li G H, Zhang X Y, Liang C H, Chen W and Wang S X 2001 Appl. Phys. Lett. 78 1125
[54]	Suisalu A, Aarik J, Mändar H and Sildos I 1998 Thin Solid Films 336 295

Ce–Co-doped BiFeO₃ multiferroic for optoelectronic and photovoltaic applications

Ce–Co-doped BiFeO₃ multiferroic for optoelectronic and photovoltaic applications

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 54

相关文章 5

Metrics

本文评价

推荐阅读 0

[1]	Ghfoor Muhammad, Imran Murtaza, Rehan Abid, and Naeem Ahmad. Effect of different catalysts and growth temperature on the photoluminescence properties of zinc silicate nanostructures grown via vapor-liquid-solid method[J]. 中国物理B, 2022, 31(5): 57801-057801.
[2]	王常春, 宋乐乐. Nanosheet-structured B₄C with high hardness up to 42 GPa[J]. 中国物理B, 2019, 28(6): 66201-066201.
[3]	杨朝明, 张坤, 裘南, 张海斌, 汪渊, 陈坚. Effects of helium implantation on mechanical properties of (Al_0.31Cr_0.20Fe_0.14Ni_0.35)O high entropy oxide films[J]. 中国物理B, 2019, 28(4): 46201-046201.
[4]	刘娇娇, 常琪, 鲍美美, 元冰, 杨恺, 马余强. Silicon quantum dots delivered phthalocyanine for fluorescence guided photodynamic therapy of tumor[J]. 中国物理B, 2017, 26(9): 98102-098102.
[5]	Muhammad Imran, Fayyaz Hussain, Muhammad Rashid, S. A. Ahmad . Dynamic characteristics of nanoindentation in Ni: A molecular dynamics simulation study[J]. 中国物理B, 2012, 21(11): 116201-116201.